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A dielectric ceramic material and a preparation method thereof

A technology for dielectric ceramics and ceramic powders, applied in the field of ceramic materials, can solve the problems of damaging the dielectric properties of alumina dielectric ceramic materials and reducing the Q value of the quality factor of alumina dielectric ceramics, achieving high density, high Q value, The effect of uniform grain distribution

Active Publication Date: 2019-03-01
ANHUI TATFOOK TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the long-term research and development process, the inventors of the present application found that adding a large amount of low-melting glass phase would damage the dielectric properties of the alumina dielectric ceramic material, reducing the Q value of the alumina dielectric ceramic quality factor

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  • A dielectric ceramic material and a preparation method thereof
  • A dielectric ceramic material and a preparation method thereof
  • A dielectric ceramic material and a preparation method thereof

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preparation example Construction

[0044] see figure 2 , figure 2 It is a schematic flow chart of an embodiment of the method for preparing a dielectric ceramic material of the present invention. The preparation method of the dielectric ceramic material of an embodiment provided by the present invention, the preparation method comprises:

[0045] Step S101, adding ball milling medium, deionized water and dispersant to the starting raw materials of analytically pure alumina with a purity of 99.9% or more in the α crystal phase and sintering aids, and mechanically mixing in a planetary ball mill, and the mixing is completed Afterwards, drying treatment is carried out to obtain a mixed powder.

[0046] The molecular formula is Al 2 o 3 —xMO, wherein, MO represents a sintering aid, and the sintering aid is selected from at least one of analytically pure boron oxide, analytically pure silicon dioxide, analytically pure magnesium oxide, and analytically pure zinc oxide, and the analytically pure alumina and the...

Embodiment 1

[0072] The starting materials in Example 1 are proportioned according to the molecular formula Al2O3—xMO, wherein MO represents one of B2O3, SiO2, MgO, and ZnO, and the molar ratio of analytically pure alumina to sintering aid is 1:x, where x is The value range is 0.01 to 0.1. The mixed material of analytically pure alumina with a purity of 99.9% alpha crystal phase and analytically pure boron oxide, analytically pure silicon dioxide, analytically pure magnesium oxide or analytically pure zinc oxide is used as a starting material, and is realized through the following process steps.

[0073] 1) Using a mixture of analytically pure alumina with a purity of 99.9% α crystal phase and analytically pure boron oxide, analytically pure silicon dioxide, analytically pure magnesium oxide or analytically pure zinc oxide as the starting material, the above starting material Weigh it according to a certain molar ratio and place it in a polyurethane ball mill jar, add a certain amount of z...

Embodiment 2

[0085] The starting raw material of embodiment 2 carries out proportioning according to molecular formula Al2O3—0.07{SiO2—(1-y)ZnO—yMgO}, wherein analytically pure alumina, analytically pure silicon dioxide, analytically pure zinc oxide and analytically pure magnesium oxide The molar ratio is 1:0.07:0.07(1-y):0.07y, wherein the range of y is 0-1. The mixed material of analytically pure alumina, analytically pure silicon dioxide, analytically pure magnesium oxide or / and analytically pure zinc oxide with a purity of 99.9% in alpha crystal phase is used as a starting material, and is realized through the following process steps.

[0086] 1) Using a mixture of analytically pure alumina, analytically pure silicon dioxide, analytically pure magnesium oxide or / and analytically pure zinc oxide with a purity of 99.9% of the α crystal phase as the starting material, the above-mentioned starting materials are mixed in a certain molar ratio Weigh it and place it in a polyurethane ball mil...

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Abstract

A dielectric ceramic material and a preparation method thereof, wherein a ball milling medium, a deionized water and a dispersing agent are added to a starting material of an analytically pure alpha-alumina and a sintering aid having a purity of 99.9% or more, and are mixed in a planetary ball mill. Mechanical mixing and drying are carried out to obtain a mixed powder, wherein the mass ratio of the starting material, the ball milling medium and the deionized water is 1:4:1.1 to 1.3, the ball milling time is 4 hours, and the diameter of the ball milling medium is 2-3mm; the mass percentage of the dispersing agent in the dielectric ceramic material is from three thousandths to six thousandths; the mixed powder is placed in a nano-scale circulating sander for sanding and dispersing treatmentto obtain the ceramic powder; the ceramic powder is subjected to heat sintering to further obtain the dielectric ceramic material.

Description

technical field [0001] The invention relates to the technical field of ceramic materials, in particular to a dielectric ceramic material and a preparation method thereof. Background technique [0002] Alumina dielectric ceramic is a new type of electronic functional ceramic used as a dielectric in microwave and frequency band circuits. It has high physical strength (bending strength > 300MPa), low dielectric constant (εr value ≈ 9), and low loss (quality Factor Q value>100000), frequency temperature coefficient τf is small, etc. Therefore, it can be made into chip antennas, radar substrates, resonator supports and other components, which are widely used in mobile communication, military radar, satellite positioning and navigation systems and other technologies field. However, the sintering temperature of this ceramic material is usually higher than 1700°C, and the quality factor Q value is generally not high due to the microscopic defects generated during the sinterin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/10C04B35/64
CPCC04B35/10C04B35/64C04B2235/3284C04B2235/3418C04B2235/3409C04B2235/3206C04B2235/96
Inventor 袁亮亮陆正武曾俊
Owner ANHUI TATFOOK TECH CO LTD
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