Surface-emitting terahertz quantum cascade laser and manufacturing method thereof

A technology of surface emission and quantum cascade, applied in nano optics, structure of optical waveguide semiconductor, nanotechnology, etc. Effect of Divergence Angle

Active Publication Date: 2012-07-04
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the reflection of the end face of the surface emitting waveguide will affect the mode of the laser, and the large strip width and large area are easy to excite the transverse high-order mode.
An effective solutio

Method used

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  • Surface-emitting terahertz quantum cascade laser and manufacturing method thereof
  • Surface-emitting terahertz quantum cascade laser and manufacturing method thereof
  • Surface-emitting terahertz quantum cascade laser and manufacturing method thereof

Examples

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Embodiment 1

[0043] This embodiment provides a surface emitting terahertz quantum cascade laser, such as figure 1 As shown, it includes single-mode generating area waveguide 10, tapered coupling area waveguide 09 and surface emission area waveguide 08; The second-order grating 07 structure; single-mode terahertz seed light is generated inside the single-mode generating region waveguide 10, and the tapered coupling region waveguide 09 amplifies and couples the terahertz seed light to the surface emission region waveguide 08, and the surface emission region waveguide 08 enables The terahertz laser is emitted perpendicular to the surface of the substrate 01.

[0044] The entire device of the surface-emitting terahertz quantum cascade laser is made of GaAs, and a double-sided metal waveguide process is adopted. The single-mode generation region waveguide 10 of the laser, the tapered coupling region waveguide 09 and the surface emission region waveguide 08 are three parts. The whole is prepare...

Embodiment 2

[0050] This embodiment provides a surface-emitting terahertz quantum cascade laser, which differs from the laser described in Embodiment 1 in that it adopts a double symmetric structure to achieve output power multiplication. Usually the two ends of the second-order grating terahertz quantum cascade laser along the grating arrangement direction need to make absorption edges, but the double symmetric structure can save the absorption edge. This also provides a method for second-order grating surface-emitting lasers, where first-order gratings can be etched at both ends of the waveguide to both increase the output power and suppress the lasing of the F-P cavity feedback mode.

[0051] Such as figure 2 As shown, it provides a schematic top view of a surface-emitting terahertz quantum cascade laser with a double symmetrical structure, omitting the schematic diagram of the substrate structure; waveguide 09 in the coupling region and waveguide 10 in the single-mode generation regi...

Embodiment 3

[0060] This embodiment provides a manufacturing method of the surface-emitting terahertz quantum cascade laser described in Embodiments 1 and 2. The manufacturing method adopts a double-sided metal waveguide process and includes the following steps:

[0061] Molecular beam epitaxy (MBE) growth of about 500 nm thick Al on semi-insulating GaAs substrate 0.5 Ga 0.5 As etch stop layer;

[0062] Molecular beam epitaxy (MBE) grows a heavily doped n-type GaAs upper contact layer with a thickness of about 500 nanometers on the etching barrier layer, and its function is to make the metal and GaAs form a non-alloy ohmic contact;

[0063] Molecular beam epitaxy (MBE) growth of an AlGaAs / GaAs alternating multilayer periodic structure active region on the upper contact layer, with a thickness of about 10 microns;

[0064] Molecular beam epitaxy (MBE) grows a heavily doped n-type GaAs lower contact layer of about 50 nanometers on the active region; then an electron beam evaporates a metal...

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Abstract

The invention provides a surface-emitting terahertz quantum cascade laser and a manufacturing method thereof. The laser comprises a single mode producing zone waveguide, a cone-shaped coupled zone waveguide and a surface-emitting zone waveguide, wherein the single mode producing zone waveguide and the cone-shaped coupled zone waveguide respectively adopt a first-order grating structure; the surface-emitting zone waveguide adopts a second-order grating structure; single mode terahertz seed light is produced in the single mode producing zone waveguide; the cone-shaped coupled zone waveguide is used for amplifying the terahertz seed light and coupling the terahertz seed light to the surface-emitting zone waveguide; and the surface-emitting zone waveguide enables the terahertz laser light to be exited vertical to the surface of a substrate. According to the surface-emitting terahertz quantum cascade laser, terahertz laser surface emitting with large power, narrow linewidth, small angle of divergence is realized, the laser emission of horizontal high-order mode is restrained to some extent, and the coupling loss and the end face loss between the waveguides are simultaneously reduced.

Description

technical field [0001] The invention belongs to the technical field of laser semiconductors, and relates to a terahertz quantum cascade laser, in particular to a surface-emitting terahertz quantum cascade laser and a manufacturing method thereof. Background technique [0002] Terahertz (THz) quantum cascade laser (quantum cascade laser, QCL), as an important terahertz radiation source, has the advantages of small size, light weight, and easy integration, and is a research hotspot in the field of terahertz. The research of terahertz quantum cascade lasers mainly focuses on the two aspects of active region and waveguide, which require devices with high operating temperature, low threshold current density, high conversion efficiency, high output power, single-mode narrow spectral linewidth, and small far field divergence angle and other properties. [0003] The waveguide structures of terahertz quantum cascade lasers mainly include single-sided metal waveguides and double-side...

Claims

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Application Information

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IPC IPC(8): H01S5/34H01S5/22B82Y20/00
Inventor 曹俊诚万文坚韩英军
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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