A vertical cavity surface-emitting laser chip and a manufacturing method thereof

Abstract

The invention provides a vertical cavity surface-emitting laser chip and a manufacturing method thereof. The vertical cavity surface-emitting laser chip comprises a substrate, and an N-type DBR layer,a first oxide layer, an MQW layer, a second oxide layer and a P-type DBR layer sequentially arranged on a first surface of the substrate; the first oxide layer includes a first non-oxidized region located at the center and a first oxidized region located around the first non-oxidized region. The second oxide layer includes a second non-oxidized region located at the center and a second oxidized region located around the second non-oxidized region. The first oxide region and the second oxide region are non-conductive and the area of the first non-oxidized region is smaller than the area of thesecond non-oxidized region. Since the area of the first non-oxidized region is smaller than the area of the second non-oxidized region, the current extends laterally in the second non-oxidized region, so that the current flows uniformly from the second non-oxidized region to the first non-oxidized region, thereby increasing the current density near the center region of the VCSEL chip and reducingthe half-wave width of the VCSEL chip.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, and more specifically, to a vertical cavity surface emitting laser chip and a manufacturing method thereof. Background technique [0002] VCSEL (Vertical-Cavity Surface-Emitting Laser) chip has the advantages of small size, circular output spot, single longitudinal mode output, small threshold current, low price and easy integration into a large-area array. It is widely used in optical communication, optical interconnection and optical storage and other fields. However, the half-wave width of the existing VCSEL chip is still relatively large, which is not conducive to the application of the VCSEL chip in the special communication field. Contents of the invention [0003] In view of this, the present invention provides a vertical cavity surface emitting laser chip and a manufacturing method thereof, so as to reduce the half-wave width of the VCSEL chip. [0004] To achieve the above ob...

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Problems solved by technology

However, the half-wave width of existing VCSEL chips is still relatively large, which is not conducive to the application of VCSEL chips in special communication fields

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