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A semiconductor laser epitaxial structure

An epitaxial structure and laser technology, which is applied in the direction of semiconductor lasers, lasers, and devices for controlling laser output parameters, etc., can solve the problems of low recognition, wide half-wave width of laser emission wavelength, etc., to reduce half-wave width and improve signal The effect of recognition

Active Publication Date: 2021-04-02
武汉云岭光电股份有限公司
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Problems solved by technology

[0004] However, in the conventional semiconductor laser structure, there is no region where the absorption wavelength is shorter than the laser emission wavelength, which will make the half-wave width of the laser emission wavelength larger, and the recognition degree is not high in laser communication.

Method used

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  • A semiconductor laser epitaxial structure
  • A semiconductor laser epitaxial structure
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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] see Figure 2-Figure 5 An embodiment of the present invention provides a semiconductor laser epitaxial structure, including a substrate 1 at the bottom, an InP buffer layer 2 grown on the substrate 1, and an electrode contact layer 10 at the top. The epitaxial structure also includes A multi-quantum well layer 6 between the InP buffer layer 2 and the electrode contact layer 10, a superlattice layer is made near the multi-quantum well layer 6, and the su...

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Abstract

The invention relates to the technical field of semiconductor lasers, and provides a semiconductor laser epitaxial structure comprising a substrate located at the lowest layer, an InP buffer layer grown on the substrate and an electrode contact layer located at the highest layer. The semiconductor laser epitaxial structure also comprises a multiple quantum well layer located between the InP bufferlayer and the electrode contact layer. A supergrid layer is manufactured near the multiple quantum well layer, and the supergrid layer is located between the InP buffer layer and the electrode contact layer. The semiconductor laser epitaxial structure can absorb photons of which the energy is higher than that of the laser emission wavelength through the supergrid layer, reduce the half wave widthof the laser light source and thus improve the signal recognition degree of the semiconductor laser.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an epitaxial structure of a semiconductor laser. Background technique [0002] Semiconductor lasers have been more and more widely used in the fields of solid-state laser pumping, laser medical treatment, laser processing, laser display, laser communication, and military applications, which also put forward higher requirements for semiconductor lasers. [0003] In recent years, the communication bandwidth has developed from 2G to 4G, and then to the upcoming 5G. Human pursuit of high-speed communication is constantly expanding. This has higher and higher requirements for signal generators-semiconductor lasers, especially for signal strength and signal identification. Degree requirements are getting higher and higher. [0004] However, there is no region where the absorption wavelength is shorter than the laser emission wavelength in the structure of conventional sem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/06
CPCH01S5/0601H01S5/0602
Inventor 李鸿建罗绍军
Owner 武汉云岭光电股份有限公司
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