Solar cell and manufacturing method thereof

Abstract

The embodiment of the invention provides a solar cell and a manufacturing method thereof, a plurality of stacked sub-cells and a tunnel junction structure located between adjacent sub-cells are included, the tunnel junction structure comprises a first superlattice layer, a tunnel junction layer and a second superlattice layer which are stacked, the first superlattice layer and the second superlattice layer can restrain doping ions in the tunneling junction layer from diffusing into adjacent sub-cells, so that the doping concentration of the tunneling junction layer is prevented from being reduced, the characteristic of high doping of the tunneling junction layer is maintained, the tunneling effect of the tunneling junction layer is good, the tunneling current is large, and the large-current transportation requirement is met. Moreover, the first superlattice layer and the second superlattice layer can effectively inhibit the doping ions in the tunnel junction layer from diffusing into the adjacent sub-cells, and can also prevent the doping concentration of the tunnel junction layer from being reduced, thereby preventing the loss of the open-circuit voltage of the solar cell from being increased by the tunnel junction layer.

Description

technical field [0001] The present application relates to the technical field of solar cell fabrication, in particular to a solar cell and a fabrication method. Background technique [0002] A solar cell can directly convert solar energy into electrical energy, and is a device that can effectively use clean energy-solar energy. Among them, gallium arsenide triple-junction solar cells have completely replaced the solar cells due to their high conversion efficiency (about twice the conversion efficiency of Si solar cells), excellent radiation resistance, stable temperature characteristics, and ease of large-scale production. Si solar cells have become the main power source of space vehicles, and the conversion efficiency of gallium arsenide triple-junction solar cells represented by GaInP / InGaAs / Ge has exceeded 30% under the space spectrum (AMO), and the conversion efficiency under the condition of high concentration on the ground It has exceeded 40%, becoming the leader in t...

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Problems solved by technology

[0004]However, the dopant ions in the existing tunnel junction layer (n-type GaInP layer / p-type AlGaAs layer) easily diffuse into the adjacent sub-cells, resulting in tunneling The resistance in the tunnel junction layer (n-type GaInP layer / p-type AlGaAs layer) increases, so that the tunneling current in the tunnel junction layer (n-GaInP layer / p-AlGaAs layer) decreases and makes the tunnel junction layer more effective for solar cells The loss of the open circuit voltage increases

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