Method for preparing tunneling crystal silicon solar cell

Abstract

The invention discloses a method for preparing a tunneling crystal silicon solar cell. The method comprises the following steps of: depositing a layer of silicon dioxide nano particle film on the front surface of a cleaned and felted p-type crystal wafer and preparing an ITO (Indium Tin Oxide) film on the silicon dioxide nano particle film for being used as a front electrode; or depositing a layer of silicon dioxide nano particle film on the back surface of a cleaned and felted n-type crystal wafer and preparing a layer of ITO film on the surface of the silicon dioxide nano particle film for being used as a back electrode. Compared with the traditional method for preparing the crystal silicon solar cell, the method disclosed by the invention has the advantages of simplicity, easy operation, greatly simplifies the preparation process, reduces the preparation cost and has broad application prospect.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon solar cells, in particular to a method for manufacturing a tunneling crystalline silicon solar cell. Background technique [0002] As human history enters the 21st century, energy crisis and environmental pollution have become global issues related to the healthy development of human civilization, and the development of reliable and safe green energy has become the main method to solve the crisis. In this context, countries around the world are investing more and more in the development of new energy technologies. [0003] As one of the most important ways to utilize clean energy, solar cells have attracted widespread attention from all over the world. After years of development, a variety of solar cell materials have been developed. Among them, crystalline silicon solar cells occupy more than 80% of the photovoltaic market due to their high photoelectric conversion efficiency, matur...

AI Technical Summary

Problems solved by technology

However, this battery manufacturing process has the following problems: (1) high-temperature diffusion process is required, the process cost is high, and parasitic diffusion is easily generated on the other surface of the battery, which complicates the process flow; (2) the characteristics of the emitter It has a great impact on the performance of the battery. Too high a doping concentration will lead to a "dead zone" on the surface, while a too low surface doping concentration will greatly affect the fill factor of the battery; (3) the process of making the PN junction by surface diffusion will Forms thicker phosphosilicate glass, which needs to be removed by a highly polluting hydrofluoric acid solution, increasing indirect material costs

However, it is very difficult to popularize this technology. At present, only Sanyo Group has mastered the key technology of HIT battery. One of the main reasons is that the process control of the amorphous silicon thin film of the HIT battery is extremely difficult. Defects will become an important reason for the intensification of carrier recombination in batteries, and the collection and transmission of photogenerated currents in batteries will be seriously affected