The invention relates to a fast recovery diode FRD chip and a production process for the same. The process comprises the following steps of: diffusion pre-treatment, boron source pre-deposition, boron source main diffusion, diffusion after-treatment, single-surface back grinding thinning, oxidation pre-treatment, oxidation, photoetching, single-surface oxide layer removal, phosphorus source pre-deposition, phosphorus diffusion, sand blasting, platinum diffusion, N + surface mesa etching, electrophoresis, sintering, oxide layer removal, nickel plating, gold plating and chip cutting, wherein the structure of the obtained chip is P+-N-N+ type. According to the process, the uniformity of the reverse recovery time of the fast recovery diode is improved and controllability is improved, meanwhile, voltage drop is reduced, leakage current is reduced, and voltage-proof stability is improved; the contradiction of mutual condition among the reverse voltage, the positive voltage, the reverse recovery time and the leakage current of the fast recovery diode is solved to enable the various parameters to achieve the optimal matching, thus improving the reliability and switching characteristic of the diode, and reducing power consumption. The fast recovery diode disclosed by the invention breaks through the technical bottleneck of the traditional fast recovery diodes.