908 results about "Chip resistor" patented technology

A chip resistor (A1) comprises a first insulation layer (2A) covering the regions between a plurality of electrodes (3) on a rear surface (10a) of a resistor (1), and a second insulation layer covering a pair of side faces of the resistor (1). Inadvertent adhesion of solder to an improper part of the resistor (1) can thereby be eliminated. A solder layer (4) is preferably formed on a pair of end faces (10d) of the resistor (1). In so doing, a solder fillet can be formed appropriately.

A chip resistor includes an insulating substrate 2 in the form of a chip having an upper surface and an opposite pair of side surfaces, a resistor film 4 formed on the upper surface of the insulating substrate 2, a pair of upper electrodes 5 formed on the upper surface of the insulating substrate 2 to flank the resistor film 4 in electrical connection thereto, a cover coat 6 covering the resistor film 4, an auxiliary upper electrode 7 formed on each of the upper electrodes 5 and including a first portion 7a adjoining the relevant side surface of the insulating substrate 2 and a second portion 7b overlapping the cover coat 6, and a side electrode 8 formed on each of the side surfaces of the insulating substrate 2 and electrically connected to at least the upper electrode 5 and the auxiliary upper electrode 7. The first portion 7a of the auxiliary upper electrode 7 has an obverse surface positioned higher than an obverse surface of the second portion 7b for projecting above an obverse surface of the cover coat 6.

Provided are: a ruthenium oxide powder which is produced, at low cost, as a material for electronic components such as a chip resistor, a hybrid IC and a resistive network each having a sufficient performance, even if the ruthenium content thereof is low; a composition for thick film resistor elements, which uses the ruthenium oxide powder; and a thick film resistor element. Specifically provided are: a ruthenium oxide (RuO2) powder having a rutile crystal structure, which is characterized in that the crystallite diameter of the (110) plane as determined by an X-ray diffraction method is 3-10 nm and the Ru content is 73% by mass or more; a composition for thick film resistor elements, which is obtained by blending a glass powder and conductive particles that are formed of the ruthenium oxide powder as main constituent elements; and a thick resistor element paste, which is obtained by dispersing the composition for thick film resistor elements in an organic vehicle that contains a fatty acid, and which is characterized in that the content of the fatty acid is 0.1-10 parts by weight per 100 parts by weight of the ruthenium oxide.

The present invention is one where, in a lead wire led-out type crystal oscillator of constant temperature type for high stability, comprising: a heat supply body that supplies heat to a crystal resonator from which a plurality of lead wires are led out, to maintain the temperature constant; an oscillating element that constitutes an oscillating circuit together with the crystal resonator; a temperature control element that constitutes a temperature control circuit for controlling the temperature of the crystal resonator; and a circuit board for mounting the heat supply body, the oscillating element, and the temperature control element, and through which lead wires of the crystal resonator are passed through for mounting, the heat supply body comprises: a heat conducting plate which has through-holes for the lead wires and is mounted on the circuit board, and which faces, and is directly thermally joined to, the crystal resonator; and a chip resistor for heating which is mounted on the circuit board adjacent to the heat conducting plate, and is thermally joined to the heat conducting plate. As a result, a lead wire led-out type crystal oscillator of constant temperature type for high stability wherein the structure is simplified, and in particular the height dimension is reduced can be provided. Moreover, the present invention is a constant temperature type surface mounting type crystal oscillator which uses a crystal resonator for surface mounting which is mounted on the circuit board together with the oscillating elements and temperature control elements, and is constructed such that the crystal resonator is arranged on a ceramic substrate, and at least a chip resistor for heat generation and a highly temperature-dependent highly heat sensitive element are arranged on the ceramic substrate. The structure is such that the crystal resonator is arranged on one principal plane of the ceramic substrate, and the chip resistor and the temperature sensitive element are arranged on the other principal plane of the ceramic substrate, and the other principal plane of the ceramic substrate is positioned facing one principal plane of the circuit board, and heat conductive resin is interposed between the chip resistor and the circuit board. A surface mounted crystal oscillator of constant temperature type in which miniaturization is advanced, and the structure is simplified, is provided.

The present invention relates to a CMOS reference source, which comprises a constant transconductance value current source circuit used to output constant transconductance value current, a constant voltage reference-producing circuit used to output a reference voltage and a constant current value current source circuit used to output a constant current value, a comparison voltage is obtained through resistors, and the constant voltage reference-producing circuit applies a voltage to an adjustable resistance array, so that the output current of the constant current value current source circuit can be generated; an off-chip resistor is needed, and the pin of the off-chip resistor is respectively connected with the constant transconductance value current source circuit and the constant current value current source circuit, and therefore a switching parallel circuit is formed; a feedback rectification system, which is composed of the resistor, a comparator and a digital control module, is used to rectify the output current value of the constant current value current source circuit. The present invention provides each core module unit circuit in an integrated CMOS circuit with the stable and high-precision CMOS reference source (a constant transconductance value current source and a constant current value current source) which cannot be affected by temperature change, power supply voltage change and the deviation of a fabrication technique.

There is provided a chip resistor including a ceramic substrate; a first resistance layer formed on the ceramic substrate and including a first conductive metal and a first glass; and a second resistance layer formed on the first resistance layer, including a second conductive metal and a second glass, and having a smaller content of glass than the first resistance layer, thereby obtaining relatively low resistance and a relatively small temperature coefficient of resistance (TCR).

This invention relates to resin sizing material used in sheet resistors including an adhesive and a filler, among which, the adhesive is a mixture of bakelite and epoxy resin formed in an organic solution, the filler is one of white, black fillers or a noble metal powder. The said sizing material is used in a secondary enveloper, markers and end electrodes of the resistor and completely solidified under 160-250deg.C not influencing the sheet resistors.

The present invention provides a chip resistor (1), comprising: a pair of terminal electrodes (4, 5) provided at the ends of an insulating substrate (2) constituting a chip shape; On the upper side, a resistive film (3) is formed in such a manner as to conduct with a pair of terminal electrodes (4, 5), and an adjustment groove (3a) for setting a resistance value is formed on a part thereof. The pair of terminal electrodes (4, 5) includes a lower electrode (4b) formed on the lower surface of the insulating substrate (2), and the lower electrode (4b) extends to the adjustment groove (3a) formed on a part of the resistance film (3). And the position directly below the narrow portion (8) that makes the width dimension of the resistive film (3) narrow.

The present invention relates to a chip resistor and method for making the same. The chip resistor includes a substrate, a pair of bottom electrodes, a resistive film, a pair of main upper electrodes, a first protective coat, a pair of barrier layers, a second protective coat, a pair of side electrodes and at least one plated layer. The first protective coat is disposed over the resistive film, and covers part of the main upper electrodes. The barrier layers are disposed on the main upper electrodes, and cover part of the first protective coat. The second protective coat is disposed on the first protective coat, and covers part of the barrier layers. The plated layers cover the barrier layers, the bottom electrodes and the side electrodes. As a result, the chip resistor features high corrosion resistance.

The present invention is one where, in a lead wire led-out type crystal oscillator of constant temperature type for high stability, comprising: a heat supply body that supplies heat to a crystal resonator from which a plurality of lead wires are led out, to maintain the temperature constant; an oscillating element that constitutes an oscillating circuit together with the crystal resonator; a temperature control element that constitutes a temperature control circuit for controlling the temperature of the crystal resonator; and a circuit board for mounting the heat supply body, the oscillating element, and the temperature control element, and through which lead wires of the crystal resonator are passed through for mounting, the heat supply body comprises: a heat conducting plate which has through-holes for the lead wires and is mounted on the circuit board, and which faces, and is directly thermally joined to, the crystal resonator; and a chip resistor for heating which is mounted on the circuit board adjacent to the heat conducting plate, and is thermally joined to the heat conducting plate.

There is provided a method for manufacturing rectangular plate type chip resistors which provides easy and convenient control of resistance, and easy and low cost manufacture of rectangular plate type chip resistors having a reliable electrode structure, as well as a rectangular plate type chip resistor obtained by this method and having excellent properties particularly at low resistance. The method includes the steps of (A) providing a resistive alloy plate strip 10 of predetermined width and thickness, (B) forming an insulating protective film (11a, 11b) of a predetermined width longitudinally along the middle of upper and lower faces of the alloy plate strip, (C) forming an electrode layer 12 composed of integrated surface, back, and end electrodes (12a, 12c, 12b, respectively), along both sides of the protective film by electroplating, and (D) cutting the alloy plate strip coated with the protective films and the electrode layers in step (C) transversely in predetermined lengths, wherein resistance is controlled to be within a predetermined range by adjusting the thickness of the alloy plate strip in step (A), the width of the protective film formed in step (B), and the cutting length in step (D).

A semiconductor component of the invention comprises a semiconductor substrate; a grid stack which is arranged on the semiconductor substrate; a n-type light doped source/drain area which is arranged in the semiconductor and is stacked adjacent the grid, wherein the n-type light doped source/drain area comprises the n-type impurity; a n-type heavy doped source/drain area, wherein the n-type heavy doped source/drain area comprises the n-type impurity; a pre-amorphized implanting area which is arranged in the semiconductor substrate, wherein the pre-amorphized implanting area comprises a back implanting area; and a clearance blocking area, wherein the depth of the clearance blocking area is larger than the depth of the n-type light doped source/drain area but is less than the depth of the back implanting area. As the clearance blocking area of the invention is arranged between the back implanting area and the light doped source/drain area the problem of phosphorus diffusion in the light doped source/drain area can be reduced. Besides as the phosphorus has high activation rate the MOS element has low chip resistor.

A ceramic package and a chip resistor obtained by forming, on a plastic ceramic green sheet comprising 100 parts by weight of a ceramic powder mainly composed of borosilicate glass, into which 10 to 30 parts by weight of an acrylic copolymer obtained by polymerizing 100 parts by weight of a (meth)acrylic acid ester and 1 to 10 parts by weight of a monomer having a functional group of a hydroxyl group, acid amide group, or amino group and having a Tg in the range of −30° C. to +10° C. is compounded, a conductor layer using a plastic conductive paste obtained by compounding, into 100 parts by weight of a conductive powder, 5 to 20 parts a mixture of an acrylic copolymer having a Tg of not more than −30° C. and an ethylcellulose-based binder, press forming the resultant single layer of ceramic green sheet, and calcining the resultant ceramic green sheet having the integrally formed bottom, opening and opening circumferential edge and a method for producing the same.