Resin size used for chip resistor

A resin paste and resistor technology, applied in the direction of resistor shell/packaging shell/potting, filling paste, epoxy resin glue, etc., can solve problems such as resistance value drift

Inactive Publication Date: 2004-07-14
GUANGDONG FENGHUA ADVANCED TECH HLDG
View PDF0 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problem that the paste with glass body as the bonding phase in the prior art will cause large resistance v...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resin size used for chip resistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Now in conjunction with table 2 and table 3 illustrate the most preferred embodiment of the present invention, in table 2, the thermosetting or thermoplastic resin that embodiment 1,2,7,8,13,14 adopts is polyvinyl butyral resin, black Fillers are pigmented carbon black and Al 2 o 3 It is prepared by mixing at a weight ratio of 1:4, and the white filler is TiO 2 and CaCO 3 Prepared by mixing at a weight ratio of 1:2; the thermosetting or thermoplastic resins used in Examples 3, 4, 9, 10, 15, and 16 are silicone resins, and the black filler is pigment carbon black and SiO 2 It is prepared by mixing at a weight ratio of 1:4, and the white filler is TiO 2 and Al 2 o 3 It is prepared by mixing in a weight ratio of 1: 2; the thermosetting or thermoplastic resin used in embodiments 5, 11, and 17 is an amino resin, and the black filler is prepared by mixing pigment carbon black and talcum powder in a weight ratio of 1: 4, The white filler is TiO 2 and SiO 2 Prepared by ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention relates to resin sizing material used in sheet resistors including an adhesive and a filler, among which, the adhesive is a mixture of bakelite and epoxy resin formed in an organic solution, the filler is one of white, black fillers or a noble metal powder. The said sizing material is used in a secondary enveloper, markers and end electrodes of the resistor and completely solidified under 160-250deg.C not influencing the sheet resistors.

Description

technical field [0001] The invention relates to a resin slurry, more specifically, the invention relates to a low-temperature curing resin slurry for chip resistors. Background technique [0002] With the technological improvement of IT, 3C (communication, consumer, computer) and other industries, the precision requirements for chip resistors are getting higher and higher. In the prior art, the slurry of the secondary encapsulation body and the marker body and the slurry of the terminal electrode all use glass as the bonding phase (called glass paste), wherein the secondary encapsulation body and the marker body The paste composition includes inorganic pigment, glass frit and organic vehicle; the paste composition of terminal electrode includes silver powder or other metal powder, glass frit and organic vehicle. In order to increase adhesion and improve processability, the above-mentioned glass frits usually must contain lead. When preparing these slurries, the components ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09D5/34C09J163/00C09K3/10H01C1/02
Inventor 金福臻孟淑媛郭铁成孔庆松刘静洲
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap