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Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element

A thick film resistor, ruthenium oxide technology, applied in thick film resistors, ruthenium/rhodium/palladium/osmium/iridium/platinum compounds, resistors, etc., can solve the problems of low crystallinity and achieve high crystallinity, Excellent economical efficiency and the effect of suppressing grain growth

Active Publication Date: 2013-12-04
SUMITOMO METAL MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no record related to microcrystals. From the addition of 20% H 2 The record of ruthenium oxide of O shows that the completeness of the hydrated crystal is low

Method used

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  • Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element
  • Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element
  • Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0100] In Example 1, an aqueous solution in which potassium ruthenate was dissolved was used as a raw material, a precipitate of ruthenium oxide was synthesized in the aqueous solution, the solid-liquid was separated, washed, and dried at 80° C. to obtain a ruthenium oxide powder. The dried ruthenium oxide was an oxide hydrate having a ruthenium content of 61.5% by mass. The dried ruthenium oxide powder was heat-treated at 650° C. for 10 minutes to obtain ruthenium oxide (RuO 2 )powder. On the other hand, in Examples 2 to 12, different from Example 1, the dried ruthenium oxide powder was heat-treated in the range of 680 to 800° C. for 10 to 30 minutes as shown in Table 1.

[0101] The resulting ruthenium oxide (RuO 2 ) powder, together with glass powder with an average particle size of 1.5 μm, is dispersed in a carrier containing ethyl cellulose at 5% to 15% by mass and terpineol at 75% to 95% by mass to form a thick film resistor paste. As for the glass powder, glass powde...

Embodiment 13 to 18

[0110] In addition to the raw materials used in Examples 1 to 12, silver (Ag) powder with an average particle diameter of 1.0 μm, palladium (Pd) powder with an average particle diameter of 0.3 μm and additives, in Examples 13 to 18, the The area resistance value of the formed thick film resistor was adjusted so as to be approximately 5Ω.

[0111] Regarding the preparation of thick film resistor paste, compared to ruthenium oxide (RuO 2 ) powder, Ag powder, and conductive powder of Pd powder, glass powder, and additive powder in total of 100 parts by weight, the carrier was compounded in an amount of 43 parts by weight. At this time, stearic acid was dispersed in the carrier with a three-roll mill to prepare a thick-film resistor paste. These thick-film resistor pastes were printed, dried, and fired in the same manner as in Examples 1 to 12, and evaluated. The evaluation results are shown in Table 3.

[0112] In Examples 13 to 18, evaluation was performed in the same manner ...

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Abstract

Provided are: a ruthenium oxide powder which is produced, at low cost, as a material for electronic components such as a chip resistor, a hybrid IC and a resistive network each having a sufficient performance, even if the ruthenium content thereof is low; a composition for thick film resistor elements, which uses the ruthenium oxide powder; and a thick film resistor element. Specifically provided are: a ruthenium oxide (RuO2) powder having a rutile crystal structure, which is characterized in that the crystallite diameter of the (110) plane as determined by an X-ray diffraction method is 3-10 nm and the Ru content is 73% by mass or more; a composition for thick film resistor elements, which is obtained by blending a glass powder and conductive particles that are formed of the ruthenium oxide powder as main constituent elements; and a thick resistor element paste, which is obtained by dispersing the composition for thick film resistor elements in an organic vehicle that contains a fatty acid, and which is characterized in that the content of the fatty acid is 0.1-10 parts by weight per 100 parts by weight of the ruthenium oxide.

Description

technical field [0001] The present invention relates to a ruthenium oxide powder, a composition for a thick-film resistor using the same, and a thick-film resistor, in particular to the following ruthenium oxide powder, a composition for a thick-film resistor using the same, and a thick-film resistor, Even when the ruthenium oxide powder has a low ruthenium content, electronic component materials such as chip resistors, hybrid integrated circuits, and resistor networks with sufficient performance can be produced inexpensively. Background technique [0002] Generally, thick-film resistors such as chip resistors, hybrid integrated circuits, or resistor networks are formed by printing thick-film resistor paste on a ceramic substrate and firing it. As the conductive fine particles of the composition for thick film resistors, ruthenium oxide powder and glass powder typified by ruthenium oxide are widely used as main components. [0003] The reasons why ruthenium oxide and glass ...

Claims

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Application Information

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IPC IPC(8): C01G55/00H01C7/00
CPCC01G55/004H01C7/003C01G55/00H01C7/00
Inventor 川久保胜弘前田俊辉进藤拓生永野崇仁
Owner SUMITOMO METAL MINING CO LTD
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