The invention discloses an integrated high-performance
LDMOS device and a preparation method thereof, and the method comprises the steps: forming a first polysilicon layer at one side of a second well region, a third well region and an
oxide layer, forming a second polysilicon layer at the other side of the
oxide layer, and forming resistive field plates which are located between the first polysilicon layer and the second polysilicon layer and are arranged on the
oxide layer at intervals, resistive field plates are arranged in the
LDMOS device, an
equipotential ring is formed between the resistive field plates, the resistive field plates and the
equipotential ring are arranged between a gate and a drain of the
LDMOS device at intervals, only a thin
silicon dioxide film layer is arranged between the surface of a drift region of the device and the resistive field plates at intervals, one side of each resistive field plate is connected with a drain
electrode high potential, and a source
electrode is connected with a lowest potential. A weak leakage current passing through the resistive field plate exists between the source
electrode and the drain electrode, so that the surface
electric field distribution between the grid electrode and the drain electrode of the device is more uniform, the peak electric fields near the grid electrode and the drain electrode are greatly weakened, the
voltage resistance of the device is improved, and the HTRB reliability of the device is improved.