Soft fast recovery diode and manufacturing method thereof
A recovery diode and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as terminal reliability deterioration, chip defect increase, device performance degradation, etc., to improve withstand voltage stability, Effects of low loss and improved device reliability
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[0047] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0048] The invention provides a novel soft and fast recovery diode device structure. The vertical diode device includes a high-concentration P+ ohmic contact layer, a P-type emission region, an N-type intrinsic region, a back N+ buffer zone, positive and negative electrodes, and a global lifetime control region. and a local lifetime control layer; the lateral diode device includes an active region, a P-type high-resistance region at the boundary of the active region, a termination region and a scribe lane. The invention realizes the soft and fast recovery characteristics of the device by adopting the global plus local life control mode, and improves the anti-avalanche ability of the device by increasing the high-resistance area.
[0049] The present invention provides a soft and fast recovery diode structure with global ...
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