Power semiconductor chip, sub-module comprising the chip and crimping-type packaging module

Abstract

The invention discloses a power semiconductor chip, a sub-module comprising the chip and a crimping-type packaging module. The chip comprises: a terminal area and an effective area arranged inside the terminal area. The effective area is provided therein with an emitting electrode area and a grating electrode area. The grating electrode area comprises a grating electrode, a grating electrode bus, and a plurality of peripheral grating electrodes arranged on the circumference of the grating electrode. The grating electrode is arranged at the center of the peripheral grating electrode surrounding area; and the grating electrode is connected with the peripheral grating electrodes through the grating electrode bus. The peripheral grating electrode surrounding area is divided into a plurality of sub-areas in the same size by the grating electrode bus with emitting electrodes arranged in the sub-areas. Among the peripheral grating electrodes, break points are arranged. The break points are distributed in center symmetrical or axial symmetry. The emitting electrodes inside and outside the peripheral grating electrode surrounding area are communicated with each other via the break points. With the invention, the problem with balanced contact of the interfaces among the sub-modules that can be hardly achieved in the prior art can be realized. The technical problems with complex structure and technology as well as with achieving a high finished product rate can be resolved. In addition, batch production also becomes possible.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a power semiconductor chip, including a sub-module of the chip and a crimping package module. Background technique [0002] With the development of technology and the continuous expansion of application fields, power semiconductor devices occupy an increasingly important position in modern power electronics technology. At present, power semiconductor devices are developing in the direction of high frequency, high power, intelligence and modularization. Among them, as a key technology for the application of power semiconductor devices, how to realize the high power capacity of power semiconductor modules has become the key direction of research and development in this technical field. In order to realize the high power capacity of the power semiconductor module, the prior art generally adopts a press-fit packaging technology in which dozens of chips are connected in par...

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Problems solved by technology

[0006] In view of this, the object of the present invention is to provide a power semiconductor chip, including a sub-module of the chip and a crimping package module, so as to solve the problem that the existing modules are difficult to achieve pressure balance between sub-modules and balanced contact of the interface. As well as the technical problems that the structure and process are complicated, the yield rate is difficult to improve, and it is difficult to achieve mass production

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