Solid-state imaging device, imaging apparatus

Abstract

A solid-state imaging device includes: multiple pixels making up a slanted grid array inclined to a scanning direction, which include a photoelectric conversion unit configured to convert incident light quantity into an electric signal; and a charge-to-voltage conversion unit configured to convert signal charge read out from the photoelectric conversion unit disposed between two pixels adjacent to each other in the diagonal direction of the pixels of the multiple pixels into voltage; wherein the charge-to-voltage conversion unit is shared with the two pixels; and wherein a set of transistor group are disposed in a sharing block, which is configured of a pixel pair made up of the two pixels adjacent to each other in the diagonal direction, and a pixel pair adjacent to that pixel pair, including wiring to which the charge-to-voltage conversion unit of each pixel pair is connected.

Description

Solid-state imaging device and imaging device Cross References to Related Applications The present invention encompasses subject matter related to Japanese Patent Application JP2006-279733 filed with the Japan Patent Office on October 13, 2006, Japanese Patent Application JP2006-306278 filed with the Japan Patent Office on November 13, 2006, and Japanese Patent Application JP2006-306278 filed with the Japan Patent Office on March 2, 2007 Japanese Patent Application JP2007-052935 filed by the Japanese Patent Office, the entire contents of which are hereby incorporated by reference. technical field The present invention relates to a solid-state imaging device and an imaging device. And, the present invention also relates to an imaging device and a camera including an imaging device such as a CCD (Charge Coupled Device), a CMOS (Complementary Metal Oxide Semiconductor) sensor, or the like. Background technique Since digital cameras have been widely used in recent years, e...

AI Technical Summary

Problems solved by technology

However, CMOS imaging devices include many driver elements such as photodiodes, transfer transistors, reset transistors, amplification transistors, selection transistors, etc. within one pixel, and thus, it is difficult to reduce the size of the pixels

Also, since the number of pixels is increased, the driving load of the pixel circuit and the readout load of a signal from the pixel circuit are increased, which leads to a situation that is not conducive to high-speed driving

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