18results about How to "Increase working current" patented technology

The invention discloses a modified bismuth-based catalyst as well as a preparation method and application thereof, and belongs to the field of electrochemical reduction CO2 catalysis. By hybridizing boron-doped oxidized carbon black and bismuth oxide, in-situ synthesis of the bismuth oxide and advanced construction of a BiOC structure are realized. Particularly, in the electroreduction process of carbon dioxide, the bismuth oxide can be partially, spontaneously and irreversibly reconstructed into basic bismuth carbonate (Bi2O2CO3), and basic bismuth carbonate composite bismuth oxide (Bi2O2CO3 / Bi2O3) is formed. Due to the structure, the application performance of the catalyst in carbon dioxide electroreduction is remarkably improved, and the catalyst has high formic acid selectivity, high catalytic efficiency, excellent stability and large working current capacity.

The invention discloses a heat dissipation device of a frequency converter and an air conditioner, and the heat dissipation device of the frequency converter comprises a fan (4) which is configured to cool the frequency converter; the driving circuit (21) comprises a first current amplification device (V3) and an adjustable resistor (R2) electrically connected with a control current input end of the first current amplification device (V3), and one of an amplification current input end and an amplification current output end of the first current amplification device (V3) is electrically connected with the fan (4); a heat monitoring unit (3) configured to monitor a heat dissipation amount of the inverter; the controller (1) is electrically connected with the adjustable resistor (R2) so as to provide current for the control current input end of the first current amplification device (V3); the controller (1) is in signal connection with the heat monitoring part (3) and the adjustable resistor (R2) and is configured to reduce the resistance value of the adjustable resistor (R2) in response to the increase of the heat dissipating capacity of the frequency converter and / or increase the resistance value of the adjustable resistor (R2) in response to the decrease of the heat dissipating capacity of the frequency converter.

The invention relates to a voltage stabilizing diode chip manufacturing method, and belongs to the field of electronic accessories. According to the method for plating nickel and silver on the metal, the adhesion among all layers of the metal is improved, the metal is not prone to falling off, and the weldability and the uniformity are improved. And by adopting a silicon wafer diffusion method, only one-time photoetching is adopted, so that the cost is greatly reduced. Besides, the glass powder is adopted for glass passivation, the glass powder of the formula is easier and faster to melt after being subjected to high temperature, inconsistent thickness caused by non-uniform melting and cracks of a glass layer are avoided, the uniformity of glass passivation is improved, PN junctions are better protected while the area of the PN junctions is increased, and the reject ratio of electric leakage is avoided. And the working current is improved. According to the method disclosed by the invention, the mode of grooving the glass of which the grooves are removed by the ultraviolet laser on the front surface, grooving the back surface by the infrared laser and then splitting is adopted, so that the loss in the cutting process and the damage to a glass passivation layer are greatly reduced, and the product yield and the yield are effectively improved.

The utility model provides a parallel capacitor system for low-voltage compensation of a submerged arc furnace and a compensation cabinet. The system comprises a first capacitor and a second capacitor, the first copper pipe and the second copper pipe are respectively provided with a first end and a second end, the first end of the first copper pipe is connected with the cooling liquid inlet, the first end of the second copper pipe is connected with the cooling liquid outlet, the second end of the first copper pipe is communicated with the second end of the second copper pipe through a first flexible pipe, and the first copper pipe and the second copper pipe are electrically connected to form a positive electrode communication row; the third copper pipe and the fourth copper pipe are respectively provided with a first end and a second end, the first end of the third copper pipe is connected with the cooling liquid inlet, the first end of the fourth copper pipe is connected with the cooling liquid outlet, the second end of the third copper pipe is communicated with the second end of the fourth copper pipe through a second flexible pipe, and the third copper pipe and the fourth copper pipe are electrically connected to form a negative electrode communication bar. According to the system, the temperature rise under large current is greatly reduced, and the temperature of the cabinet body can be kept in an expected range.

The invention discloses a double-channel multi-gate high-voltage-withstanding GaN HEMT device and a manufacturing method, the device comprises a substrate layer, and a GaN high-resistance layer, a GaN channel layer and a first AlGaN barrier layer which are grown on the substrate layer in sequence, a first non-doped GaN layer, a second AlGaN barrier layer and a second non-doped GaN layer are grown on the first AlGaN barrier layer close to the middle part in sequence, a source electrode and a drain electrode are symmetrically manufactured on the two sides of the first AlGaN barrier layer, and the first non-doped GaN layer, the second non-doped GaN layer and the second non-doped GaN layer are symmetrically manufactured on the two sides of the second AlGaN barrier layer. The first non-doped GaN layer and the second AlGaN barrier layer are respectively connected with the source electrode and the drain electrode, and gaps are respectively kept between the second non-doped GaN layer and the source electrode and between the second non-doped GaN layer and the drain electrode; a first pGaN layer and a first grid are sequentially grown on the surface of the second non-doped GaN layer; a secondary epitaxial non-doped GaN layer, a secondary epitaxial pGaN layer and a second grid are sequentially grown on the other side of the surface of the first non-doped GaN layer, and gaps are kept between the secondary epitaxial non-doped GaN layer and the second AlGaN barrier layer and between the secondary epitaxial pGaN layer and the second non-doped GaN layer, so that 2DHG on the upper layer and 2DHG on the lower layer can be led out through the first grid and the second grid; and high voltage resistance of the device is realized.

The utility model discloses a small color code sheet inductance, include: pin, shell, numerical color code sheet, coil, error color code sheet, two place pin is located at shell both ends, and two place pin inboard end goes into shell inboard connection coil both ends, and numerical color code sheet and error color code sheet are located at shell upside, and error color code sheet is located at numerical color code sheet right side, the utility model discloses with color code sheet replaces color ring inductance color ring, and color code mark is clearer, and the clear, and color code sheet can also act as the fin effective improvement heat dissipation, and the lead tin alloy plating of shell can block electromagnetic radiation, and reduce the magnetic leakage, thereby can improve small inductance power, and promote small inductance miniaturization.

The invention relates to the technical field of compressors, in particular to a seat air suspension system compressor which comprises a compressor shell, a motor assembly is arranged in the compressor shell, the output end of the motor assembly is connected with an eccentric block, the eccentric block is connected with a connecting rod, and the end of the connecting rod is connected with a PTFE packing cup. A compression cavity is further formed in the compressor shell, an anodic oxidation layer is arranged on the inner wall of the compression cavity, and the PTFE leather cup slides on the inner wall of the anodic oxidation layer. According to the air suspension compressor, through heat dissipation and noise technical improvement measures, the noise level of the air suspension compressor during working can be remarkably reduced, the heat dissipation capacity can be improved, the production cost can be effectively controlled, and the product is more attractive in the market; particularly, aiming at the solution of noise and heat dissipation problems, the comfort level of a driver and passengers is greatly improved, and the noise trouble is solved; in addition, through innovation of materials and technologies, lower energy consumption and longer product service life are achieved.

The utility model provides a mount coupling power-up device, which comprises a base, an assembly plate and two pole pieces, the assembly plate is separably arranged on the base, one side of the assembly plate far away from the base is provided with an assembly limiting groove, the assembly limiting groove is used for a mount product to insert, the mount product is provided with a mounting hole for a bolt to pass through, and the two pole pieces are arranged on the mounting hole. The mount product comprises two ribbons, and the two ribbons extend to the two sides of the assembly plate respectively. Specifically, when coupling power-up of a mount product is carried out, the mount product is inserted into the inner side of an assembly limiting groove, at the moment, the mount product abuts against and is electrically connected with the pole pieces on the two sides, coupling power-up is carried out on the mount product through the pole pieces, the situation of overheating damage caused by resistance difference between a probe and the connecting position is improved, meanwhile, larger current can be conducted, and the service life of the mount product is prolonged. The replacement frequency of spare parts is reduced, the production cost is reduced, the working current can be improved, and the coupling power-up stability with a mount product is improved.

This application discloses a pre-start control circuit, method, device, and auxiliary lamp for a lamp module. The application relates to the field of auxiliary lamp control technology. The pre-start control circuit includes: a drive voltage supply circuit connected to the drive switch of the lamp module, used to provide drive voltage to the drive switch; a current sampling circuit connected to the drive switch, used to collect the operating current of the drive switch; and a main control module connected to both the drive voltage supply circuit and the current sampling circuit, used to gradually output control signals after receiving the lamp module's turn-on signal, so that the drive voltage supply circuit gradually increases the drive voltage according to the control signals until the operating current of the drive switch reaches a target current; the target current is less than or equal to the maximum current that the drive switch can withstand. This application can improve the reliability of lamp module control.

A method for manufacturing a three-dimensional semiconductor structure, comprising forming a first insulating layer on a liner, and providing at least one channel hole on the first insulating layer, each channel hole penetrating the first insulating layer and exposing the liner; sequentially stacking a first epitaxial layer and a second epitaxial layer in each channel hole, wherein the first epitaxial layer is an unevenly doped layer to form a source region or a drain region with a lower resistance; forming a second insulating layer and a sacrificial layer alternately stacked on the first insulating layer; and gradually generating a plurality of first epitaxial layers and a plurality of second epitaxial layers alternately stacked on the second epitaxial layer; the present invention also provides a three-dimensional semiconductor structure manufactured by the three-dimensional semiconductor structure manufacturing method.

The present invention provides a lateral double diffused field effect transistor, a manufacturing method, a chip and a circuit, and relates to the field of semiconductors. The transistor includes: a substrate, which includes, from bottom to top, a first substrate layer, a first oxide layer, a heavily doped silicon layer, and a second substrate layer and a second oxide layer protruding from the heavily doped silicon layer; the second oxide layer includes a gate oxide layer and a field plate oxide layer, and the thickness of the field plate oxide layer is greater than the thickness of the gate oxide layer; the heavily doped polysilicon layer and the third oxide layer are formed on the heavily doped silicon layer not covered by the second oxide layer and the second substrate layer; the heavily doped polysilicon layer, the third oxide layer, the second oxide layer and the heavily doped polysilicon layer formed at the bottom of the body region and part of the drift region, and the heavily doped silicon layer at the bottom of the body region and part of the drift region serve as the second gate, and the remaining heavily doped silicon layer and the second oxide layer serve as the second field plate. The present invention can increase the carrier flow channel and increase the working current of the transistor.

The present invention discloses a multi-layer stacked LDMOS power device, which utilizes a dual drift region formed by stacking more than two MOS device units, and introduces a P heavily doped region and an N heavily doped region at the top of the lower drift region, which not only adds a new current path and improves the working current in the on state; but also reduces the electric field peaks of the gate and drain of the lower drift region, and introduces two new electric field peaks inside the device, optimizes the internal electric field strength of the device, improves the electric field distribution inside the device, and thus improves the withstand voltage characteristics of the device. In addition, a lightly doped overlapping floating layer is introduced between the dual drift regions to assist depletion, so as to effectively increase the doping concentration of the dual drift regions and further improve the withstand voltage characteristics. Furthermore, the withstand voltage characteristics of the device are further improved by introducing a heavily doped unit buried layer at the bottom of the upper drift region and introducing a heavily doped unit floating layer in the lightly doped region between the dual drift regions.

The invention relates to a plastic plate processing foaming machine head structure which comprises a machine head body, an upper machine nozzle, a lower machine nozzle and a feeding channel are arranged on the machine head body, a sliding cavity is formed in the machine head body, and the upper machine nozzle is connected into the sliding cavity in a sliding mode in the vertical direction. A discharging channel communicated with the feeding channel is formed between the upper machine nozzle and the lower machine nozzle, and the machine head body is further provided with a driving assembly used for driving the upper machine nozzle to slide. A plurality of electric heating bars are inserted into the upper machine nozzle, a knob potentiometer is arranged in the sliding cavity, and the plurality of electric heating bars are electrically connected with the knob potentiometer through wires I; a power socket is arranged on the machine head main body and is electrically connected with the knob potentiometer; a knob of the knob potentiometer is connected with the upper machine nozzle through a first connecting assembly, and when the upper machine nozzle slides, the knob of the knob potentiometer is driven to rotate through the first connecting assembly. The temperature of the machine nozzle can be automatically adjusted according to the thickness of a produced plate.

The invention relates to a connector, in particular to a multi-core high-temperature pressure-bearing connector and a preparation method thereof. The multi-core high-temperature pressure-bearing connector comprises a shell and a plurality of contact pins, wherein a plurality of stepped through holes with the same number as the contact pins are formed in the end face of one side of the shell; the contact pin comprises a head part, a stepped insertion part and a tail part; the large end of the stepped insertion part is connected with the tail part, and the small end is connected with the head part; the head part extends into the shell from the large section of the stepped through hole and extends out of the shell from the small section of the stepped through hole; a gap of 0.05-0.1 mm is reserved between the stepped insertion part and the stepped through hole; the gap is filled with an epoxy resin adhesive; a plurality of conical barbs are arranged at the small end of the stepped insertion part, and the small end of the stepped insertion part is in interference fit with the inner wall of the small section of the stepped through hole through the conical barbs. According to the invention, the shell is made into a whole, so that the loading capacity of the product is greatly enhanced; the number of the contact pins is larger, and larger current can pass through the contact pins.

A semiconductor structure and a method for forming the same, wherein the structure comprises: a substrate, wherein the substrate has a doped drift region and a doped body region, and the conductivity type of the drift region is opposite to that of the body region; a gate structure located on the substrate, wherein part of the gate structure is located on the drift region, and part of the gate structure is located on the body region; a barrier layer located on the surface of part of the drift region adjacent to the gate structure; a doped layer located in the substrate or in the barrier layer, wherein the doped layer is located at the interface where the barrier layer and the drift region are in contact, and wherein the doped layer has repair ions. The repair ions can combine with the dangling bonds in the barrier layer, which is beneficial to improving the high voltage resistance of the formed semiconductor structure.

A semiconductor structure and a method of forming the same, the method comprising: providing a substrate, the substrate having formed thereon a channel structure comprising one or more stacked channel layers, each channel layer comprising a first sacrificial layer and a channel layer on the first sacrificial layer, and a dummy gate structure across the channel structure, the dummy gate structure covering part of the sidewalls and part of the top of the channel structure, the substrate comprising a first device region and a second device region adjacent to each other; forming isolation sidewalls standing on the substrate between adjacent channel structures at the interface between the first device region and the second device region on both sides of the dummy gate structure; and forming source / drain doping layers in the channel structures on both sides of the dummy gate structure after forming the isolation sidewalls, the source / drain doping layers adjacent to each other at the interface between the first device region and the second device region being separated by the isolation sidewalls. Subsequent gate structures surround each surface of the channel layers, increasing the area of the channel layers used as channels.

This invention discloses an ultra-high current density superconducting magnet and its wireless excitation device. The superconducting magnet includes superconducting magnet coil units and multiple superconducting strips connected in parallel. Each superconducting magnet coil unit includes a magnet coil frame and magnet coils wound on the frame. The superconducting magnet coil units are stacked, with one end connected to a busbar of one superconducting strip and the other end connected to a busbar of another superconducting strip. The two busbars are connected by superconducting flying wires. This invention uses a parallel connection to automatically distribute current among the coils. When the operating current of one coil exceeds its critical current, the current automatically flows to other coils, causing the current in coils whose operating current has not reached the critical current to continue to increase. Ultimately, all coils can operate close to their respective critical currents, increasing the operating current of each coil and significantly improving the engineering current density of the magnet.

The invention relates to the technical field of blade icing identification, in particular to a wind turbine generator icing identification control method, system and device and a medium, and the method comprises the steps: obtaining current detection values of a plurality of yaw motors of a wind turbine generator, obtaining a first judgment condition through combination with a set icing judgment threshold value, and judging the set icing degree according to the first judgment condition; and determining a plurality of grade states. And a second judgment condition is obtained by integrating the unit icing state, the impeller icing judgment threshold value and the current detection value, so that the impeller icing degree and various grade states are judged. And finally, whether the wind turbine generator is shut down or not is determined according to the icing state of the generator set, or blades are deiced according to the icing state of an impeller, so that safe operation of the wind turbine generator under the icing condition is guaranteed, and the influence of icing on the generator set and the generating capacity is reduced.