9results about How to "Increase working current" patented technology

The invention discloses a modified bismuth-based catalyst as well as a preparation method and application thereof, and belongs to the field of electrochemical reduction CO2 catalysis. By hybridizing boron-doped oxidized carbon black and bismuth oxide, in-situ synthesis of the bismuth oxide and advanced construction of a BiOC structure are realized. Particularly, in the electroreduction process of carbon dioxide, the bismuth oxide can be partially, spontaneously and irreversibly reconstructed into basic bismuth carbonate (Bi2O2CO3), and basic bismuth carbonate composite bismuth oxide (Bi2O2CO3 / Bi2O3) is formed. Due to the structure, the application performance of the catalyst in carbon dioxide electroreduction is remarkably improved, and the catalyst has high formic acid selectivity, high catalytic efficiency, excellent stability and large working current capacity.

The invention relates to a voltage stabilizing diode chip manufacturing method, and belongs to the field of electronic accessories. According to the method for plating nickel and silver on the metal, the adhesion among all layers of the metal is improved, the metal is not prone to falling off, and the weldability and the uniformity are improved. And by adopting a silicon wafer diffusion method, only one-time photoetching is adopted, so that the cost is greatly reduced. Besides, the glass powder is adopted for glass passivation, the glass powder of the formula is easier and faster to melt after being subjected to high temperature, inconsistent thickness caused by non-uniform melting and cracks of a glass layer are avoided, the uniformity of glass passivation is improved, PN junctions are better protected while the area of the PN junctions is increased, and the reject ratio of electric leakage is avoided. And the working current is improved. According to the method disclosed by the invention, the mode of grooving the glass of which the grooves are removed by the ultraviolet laser on the front surface, grooving the back surface by the infrared laser and then splitting is adopted, so that the loss in the cutting process and the damage to a glass passivation layer are greatly reduced, and the product yield and the yield are effectively improved.

The utility model discloses a small color code sheet inductance, include: pin, shell, numerical color code sheet, coil, error color code sheet, two place pin is located at shell both ends, and two place pin inboard end goes into shell inboard connection coil both ends, and numerical color code sheet and error color code sheet are located at shell upside, and error color code sheet is located at numerical color code sheet right side, the utility model discloses with color code sheet replaces color ring inductance color ring, and color code mark is clearer, and the clear, and color code sheet can also act as the fin effective improvement heat dissipation, and the lead tin alloy plating of shell can block electromagnetic radiation, and reduce the magnetic leakage, thereby can improve small inductance power, and promote small inductance miniaturization.

This application discloses a pre-start control circuit, method, device, and auxiliary lamp for a lamp module. The application relates to the field of auxiliary lamp control technology. The pre-start control circuit includes: a drive voltage supply circuit connected to the drive switch of the lamp module, used to provide drive voltage to the drive switch; a current sampling circuit connected to the drive switch, used to collect the operating current of the drive switch; and a main control module connected to both the drive voltage supply circuit and the current sampling circuit, used to gradually output control signals after receiving the lamp module's turn-on signal, so that the drive voltage supply circuit gradually increases the drive voltage according to the control signals until the operating current of the drive switch reaches a target current; the target current is less than or equal to the maximum current that the drive switch can withstand. This application can improve the reliability of lamp module control.

A method for manufacturing a three-dimensional semiconductor structure, comprising forming a first insulating layer on a liner, and providing at least one channel hole on the first insulating layer, each channel hole penetrating the first insulating layer and exposing the liner; sequentially stacking a first epitaxial layer and a second epitaxial layer in each channel hole, wherein the first epitaxial layer is an unevenly doped layer to form a source region or a drain region with a lower resistance; forming a second insulating layer and a sacrificial layer alternately stacked on the first insulating layer; and gradually generating a plurality of first epitaxial layers and a plurality of second epitaxial layers alternately stacked on the second epitaxial layer; the present invention also provides a three-dimensional semiconductor structure manufactured by the three-dimensional semiconductor structure manufacturing method.

The invention relates to a plastic plate processing foaming machine head structure which comprises a machine head body, an upper machine nozzle, a lower machine nozzle and a feeding channel are arranged on the machine head body, a sliding cavity is formed in the machine head body, and the upper machine nozzle is connected into the sliding cavity in a sliding mode in the vertical direction. A discharging channel communicated with the feeding channel is formed between the upper machine nozzle and the lower machine nozzle, and the machine head body is further provided with a driving assembly used for driving the upper machine nozzle to slide. A plurality of electric heating bars are inserted into the upper machine nozzle, a knob potentiometer is arranged in the sliding cavity, and the plurality of electric heating bars are electrically connected with the knob potentiometer through wires I; a power socket is arranged on the machine head main body and is electrically connected with the knob potentiometer; a knob of the knob potentiometer is connected with the upper machine nozzle through a first connecting assembly, and when the upper machine nozzle slides, the knob of the knob potentiometer is driven to rotate through the first connecting assembly. The temperature of the machine nozzle can be automatically adjusted according to the thickness of a produced plate.

The invention relates to a connector, in particular to a multi-core high-temperature pressure-bearing connector and a preparation method thereof. The multi-core high-temperature pressure-bearing connector comprises a shell and a plurality of contact pins, wherein a plurality of stepped through holes with the same number as the contact pins are formed in the end face of one side of the shell; the contact pin comprises a head part, a stepped insertion part and a tail part; the large end of the stepped insertion part is connected with the tail part, and the small end is connected with the head part; the head part extends into the shell from the large section of the stepped through hole and extends out of the shell from the small section of the stepped through hole; a gap of 0.05-0.1 mm is reserved between the stepped insertion part and the stepped through hole; the gap is filled with an epoxy resin adhesive; a plurality of conical barbs are arranged at the small end of the stepped insertion part, and the small end of the stepped insertion part is in interference fit with the inner wall of the small section of the stepped through hole through the conical barbs. According to the invention, the shell is made into a whole, so that the loading capacity of the product is greatly enhanced; the number of the contact pins is larger, and larger current can pass through the contact pins.

A semiconductor structure and a method of forming the same, the method comprising: providing a substrate, the substrate having formed thereon a channel structure comprising one or more stacked channel layers, each channel layer comprising a first sacrificial layer and a channel layer on the first sacrificial layer, and a dummy gate structure across the channel structure, the dummy gate structure covering part of the sidewalls and part of the top of the channel structure, the substrate comprising a first device region and a second device region adjacent to each other; forming isolation sidewalls standing on the substrate between adjacent channel structures at the interface between the first device region and the second device region on both sides of the dummy gate structure; and forming source / drain doping layers in the channel structures on both sides of the dummy gate structure after forming the isolation sidewalls, the source / drain doping layers adjacent to each other at the interface between the first device region and the second device region being separated by the isolation sidewalls. Subsequent gate structures surround each surface of the channel layers, increasing the area of the channel layers used as channels.

This invention discloses an ultra-high current density superconducting magnet and its wireless excitation device. The superconducting magnet includes superconducting magnet coil units and multiple superconducting strips connected in parallel. Each superconducting magnet coil unit includes a magnet coil frame and magnet coils wound on the frame. The superconducting magnet coil units are stacked, with one end connected to a busbar of one superconducting strip and the other end connected to a busbar of another superconducting strip. The two busbars are connected by superconducting flying wires. This invention uses a parallel connection to automatically distribute current among the coils. When the operating current of one coil exceeds its critical current, the current automatically flows to other coils, causing the current in coils whose operating current has not reached the critical current to continue to increase. Ultimately, all coils can operate close to their respective critical currents, increasing the operating current of each coil and significantly improving the engineering current density of the magnet.