2results about How to "Increase working current" patented technology

This application discloses a pre-start control circuit, method, device, and auxiliary lamp for a lamp module. The application relates to the field of auxiliary lamp control technology. The pre-start control circuit includes: a drive voltage supply circuit connected to the drive switch of the lamp module, used to provide drive voltage to the drive switch; a current sampling circuit connected to the drive switch, used to collect the operating current of the drive switch; and a main control module connected to both the drive voltage supply circuit and the current sampling circuit, used to gradually output control signals after receiving the lamp module's turn-on signal, so that the drive voltage supply circuit gradually increases the drive voltage according to the control signals until the operating current of the drive switch reaches a target current; the target current is less than or equal to the maximum current that the drive switch can withstand. This application can improve the reliability of lamp module control.

A semiconductor structure and a method of forming the same, the method comprising: providing a substrate, the substrate having formed thereon a channel structure comprising one or more stacked channel layers, each channel layer comprising a first sacrificial layer and a channel layer on the first sacrificial layer, and a dummy gate structure across the channel structure, the dummy gate structure covering part of the sidewalls and part of the top of the channel structure, the substrate comprising a first device region and a second device region adjacent to each other; forming isolation sidewalls standing on the substrate between adjacent channel structures at the interface between the first device region and the second device region on both sides of the dummy gate structure; and forming source / drain doping layers in the channel structures on both sides of the dummy gate structure after forming the isolation sidewalls, the source / drain doping layers adjacent to each other at the interface between the first device region and the second device region being separated by the isolation sidewalls. Subsequent gate structures surround each surface of the channel layers, increasing the area of the channel layers used as channels.