Semiconductor tube of hyperconjugation longitudinal double diffusion metal oxide with N channels

Abstract

The invention relates to a semiconductor tube of hyperconjugation longitudinal double diffusion metal oxide with N channels, comprising an N-type doped silicon substrate which is also used as a drain region, an N-type doped silicon epitaxial layer, a primitive cell region and a terminal region arranged at the periphery of the primitive cell region; the N-type doped silicon epitaxial layer is arranged on the N-type doped silicon substrate; the primitive cell region and the terminal region are arranged on the N-type doped silicon epitaxial layer; the terminal region comprises a first hyperconjugation structure and an N-type silicon doped semiconductor region, wherein the first hyperconjugation structure comprises a P-type column and a N-type column; an N-type heavily doped semiconductor region is arranged in the N-type silicon doped semiconductor region; the first hyperconjugation structure and the N-type silicon doped semiconductor region are respectively provided with a field oxidation layer; and the N-type heavily doped semiconductor region is connected with a metal layer. The semiconductor tube is characterized in that the first hyperconjugation structure and the N-type silicon doped semiconductor region are respectively provided with the field oxidation layer.

Description

Technical field: [0001] The present invention relates to a silicon-made high-voltage power metal oxide semiconductor device, more precisely, to a silicon-made high-voltage super-junction vertical double-diffused metal oxide semiconductor field-effect transistor (super junction VDMOS, namely super junction VDMOS, hereinafter referred to as for superjunction VDMOS). Background technique: [0002] At present, power devices are more and more widely used in daily life, production and other fields, especially power metal oxide semiconductor field effect transistors, because they have faster switching speed, smaller drive current, and wider safe operating area , so it has been favored by many researchers. Nowadays, power devices are developing rapidly in the direction of increasing operating voltage, increasing operating current, reducing on-resistance and integration. Among many power metal oxide semiconductor field effect transistor devices, especially in vertical power metal o...

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Problems solved by technology

[0003] For the terminal structure of traditional power devices, in addition to making field plate and other terminal structures on the surface of bulk silicon, a drift layer with a lower concentration is used inside the bulk silicon to ensure the withstand voltage level. However, due to the special principle of super-junction devices The concentration of the drift region is high, and the thickness of the drift layer is also small. The terminal structure of ordinary high-voltage power devices is no longer suitable for super-junction structure devices.

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