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A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

The present invention includes a circuit, system and method for selectively turning off internal clock drivers to reduce operating current. The present invention may be used to reduce power consumption by reducing operating current in a memory device. Operating current may be reduced by turning off internal clock drivers that deliver a clock signal during selected periods of time. According to an embodiment of clock control circuitry of the present invention, an internal clock is disabled if a no operation command is detected during periods of time when no read or write burst operation is taking place. Methods, memory devices and computer systems including the clock control circuitry and its functionality are also disclosed.

Provided is a nonvolatile memory device and method of operating and fabricating the same for higher integration and higher speed, while allowing for a lower operating current. The nonvolatile memory device may include a semiconductor substrate. Resistive layers each storing a variable resistive state may be formed on the surface of the semiconductor substrate. Buried electrodes may be formed on the semiconductor substrate under the resistive layers and may connect to the resistive layers. Channel regions may be formed on the surface of the semiconductor substrate and connect adjacent resistive layers to each other, but not to the buried electrodes. Gate insulating layers may be formed on the channel regions of the semiconductor substrate. Gate electrodes may be formed on the gate insulating layers and extend over the resistive layers.

It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni / ITO cladding layer electrode 10 as a transparent electrode, a Ti / Au pad electrode 11, and a Ti / Al / Ni / Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni / ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

A robust, easily deployable, covert, passive intrusion detection system uses one or more E-field sensors to detect the presence of a moving individual and to provide an indication of the presence of the individual adjacent the sensor based on E-field distortion produced by the individual. Single-ended and differential E-field sensors with noise canceling and a guarding circuit provide sufficient sensitivity, with filtering from 0.5 Hz to 8.0 Hz selecting only human intruders. Either visible or invisible flashing light sources at the sensor indicate the presence of a moving individual at the sensor, thus to provide intruder location without the necessity of providing a geolocation system.

Providing a fast current sensor direct feedback path to a modulator for controlling switching of a switched power converter in addition to an integrating feedback path which monitors average current for control of a modulator provides fast dynamic response consistent with system stability and average current mode control. Feedback of output voltage for voltage regulation can be combined with current information in the integrating feedback path to limit bandwidth of the voltage feedback signal.

A robust, easily deployable, covert, passive intrusion detection system uses one or more E-field sensors to detect the presence of a moving individual and to provide an indication of the presence of the individual adjacent the sensor based on E-field distortion produced by the individual. Single-ended and differential E-field sensors with noise canceling and a guarding circuit provide sufficient sensitivity, with filtering from 0.5 Hz to 8.0 Hz selecting only human intruders. Either visible or invisible flashing light sources at the sensor indicate the presence of a moving individual at the sensor, thus to provide intruder location without the necessity of providing a geolocation system.

A Delay Locked Loop (DLL) driver control circuit is capable of reducing an amount of current consumption by preventing the output of unnecessary clocks. The DLL driver control circuit includes a DLL driver for driving a DLL clock and a DLL driver controller for generating a control signal to control an operation of the DLL driver in response to a signal having information associated with an active mode. The DLL driver controller is provided with a counter for counting the DLL clock to produce a count a setting value having a plurality of bits and generating an activated equal signal if the two values are the same, and an SR latch for accepting the equal signal and the signal having the information associated with the active mode to provide the control signal.

A method of fabricating a chalcogenide random access memory (CRAM) is provided. The method is to provide a substrate having a bottom electrode thereon and then form a chalcogenide film and a patterned mask corresponding to the bottom electrode sequentially over the substrate. Thereafter, using the patterned mask, an ion implantation is performed to convert a portion of the chalcogenide film into a modified region while the chalcogenide film underneath the patterned mask is prevented from receiving any dopants and hence is kept as a non-modified region. The modified region has a lower conductivity than the non-modified region. After that, the patterned mask is removed and then a top electrode is formed over the non-modified region. Utilizing the ion implantation as a modifying treatment, the contact area between the chalcogenide film and the bottom electrode is decreased and the operating current of the CRAM is reduced.

A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W / L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

In order to provide a high frequency switch in which the setting range of the control voltage is expanded, the high frequency switch is constructed from a switch and a reference voltage generation circuit. The switch comprises first and second field effect transistors. In the first field effect transistor, the source electrode is connected to a signal input terminal, while the drain electrode is connected to a signal output terminal, and while the source electrode is connected to a control terminal. In the second field effect transistor, the source electrode is connected to the signal input terminal, while the drain electrode is connected to the signal output terminal, and while the gate electrode is connected to the control terminal. The reference voltage generation circuit generates two reference voltages the values of which are different from each other, then provides the lower reference voltage to the gate electrode of the first field effect transistor, and then provides the higher reference voltage to the source electrode of the second field effect transistor.

A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in contact with the phase change material. A contact structure formed in the first insulating material between the first contact electrode structure and the phase change material is also included. The contact structure is formed by an insulating material breakdown process. A method of forming a phase change device is also described.

A chalcogenide random access memory (CRAM) is provided. The CRAM includes a substrate, a first dielectric layer, a bottom electrode, a top electrode, a second dielectric layer, a modified chalcogenide spacer and an un-modified chalcogenide thin film. The first dielectric layer is disposed on the substrate and the bottom electrode is located inside the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer and it has at least one opening exposing the bottom electrode. The modified chalcogenide spacer is disposed on the sidewall of the opening exposing portion of the bottom electrode. The top electrode is disposed on the bottom electrode. The un-modified chalcogenide thin film is disposed between the modified chalcogenide spacer and the top electrode and also disposed between the bottom electrode and the top electrode. The modified chalcogenide spacer has a better etching resistivity than the un-modified chalcogenide thin film.

The power amplifier will be prevented from being damaged due to a reflected wave without the aid of any expensive isolator. There are disposed a power amplifier as well as a directional coupler provided between the power amplifier and an antenna, for detecting a reflected wave reflected from the antenna side on the power amplifier side in such a manner that when a level of the reflected wave exceeds a predetermined value, supply of power supply voltage applied to the power amplifier is cut off.

The invention relates to a fluid dynamic bearing system for the particular purpose of rotatably supporting a spindle motor used to drive the disk(s) of a hard disk drive having a stationary shaft, a thrust plate connected to the shaft, a bearing sleeve rotatable about the rotational axis of the shaft and a cover sealing the bearing sleeve, wherein the surfaces of the shaft, the thrust plate, the bearing sleeve and the cover, that face each other and are separated from each other by a fluid-filled bearing gap, form at least one radial bearing region and at least one axial bearing region. According to the invention, the shaft is designed as a hollow shaft, and the cover has a cylindrical section concentric to the rotational axis that is rotatably accommodated in the hollow shaft in such a way that between the inside diameter of the hollow shaft and the outside diameter of the cylindrical section of the cover, an inner bearing gap filled with bearing fluid is formed, the inner bearing gap being connected to the outer bearing gap.

An electronic device capable of starting up in a low-temperature environment and a startup method for starting up the electronic device in the low-temperature environment and provide a stable operation temperature. The electronic device includes a temperature detection unit, a plurality of electronic elements, a storage unit, and a control unit. The electronic elements connects to the temperature detection unit. The storage unit stores a temperature monitoring process and an operating system. The control unit electrically connects to the temperature detection unit, the electronic elements, and the storage unit. The control unit acquires an operation temperature of the electronic elements through the temperature detection unit. The control unit executes the temperature monitoring process for driving the electronic elements, and increases the operation temperature of the electronic elements, so that the operating system is executed when a working temperature of the electronic device is higher than a first rated temperature.

An oxide semiconductor device may include a gate electrode formed on a substrate, and a gate insulation layer formed on the substrate to cover the gate electrode. A channel protection structure may be disposed on the gate insulation layer to expose a portion of the gate insulation layer. A source electrode may be located on a first portion of the channel protection structure. A drain electrode may be disposed on a second portion of the channel protection structure. An active pattern may be positioned on the exposed portion of the gate insulation layer, the source electrode, and the drain electrode.

A coil energizing apparatus has a superconducting energization power supply having an output port. The power supply is arranged to generate, when in use, a pulsed output current signal at the output port.

A server system has servers that can be operated through switching as a primary system and a standby system, and a shared disk unit for storing data accessed by the servers. Each of the servers has a driver that acquires information on a configuration inside the shared disk unit after starting of the system. The driver sets the shared disk unit in an active state in which an access request can be sent to the shared disk unit. Access control determines whether the access request issued by an application should be sent on the basis of a management table indicating inhibited types of access requests for each access destination. The access control sends the access request to the driver when the access request is not inhibited for an access destination of the access request. By this arrangement, hot standby switching processing can be performed at high speed.

A thermal protector (1) including two fixed contacts (13A, 13B) provided at the end part of conduction terminal pins (5A, 5B) projecting into a metallic enclosed container (100), a support (6) arranged in a case, an oscillatory heating resistor (8) supported by the support and having two movable contacts (9A, 9B) facing the fixed contacts, and a heat responsive body (10) interposed between the heating resistor and the support and coupled with the heating resistor through a coupler (12). When an overcurrent flows through the heating resistor to generate heat therefrom and the temperature of the heat responsive body reaches a set level, the heat responsive body is inverted. Inverting motion of the heat responsive body is transmitted to the heating resistor through the coupler, and the current path is opened.

A driving circuit and method for a pixel unit, the pixel unit and a display apparatus. The driving circuit for the pixel unit includes a switching unit, a storage capacitor (Cst), a first transistor (T1), a second transistor (T2) and a sixth transistor (T6). The switching unit includes a third transistor (T3), a fourth transistor (T4) and a fifth transistor (T5) for controlling a data signal current (Idata) to charge the storage capacitor (Cst). The driving circuit for the pixel unit expedites the speed for charging the storage capacitor (Cst); further, it has an excellent negative feedback function for the leak current of the storage capacitor (Cst), and ensures the stable operation of the circuit.

A method of operating a nonvolatile memory device includes performing a first program loop, including a first program operation and a first program verification operation, for memory cells of a first page, counting a number of times that the first program loop is performed and storing the counted number when a memory cell having a threshold voltage higher than a first verification voltage, among the memory cells of the first page, is detected, and performing a second program loop, including a second program operation and a second program verification operation, for memory cells of a second page in response to the stored number for the first program loop.

A semiconductor device comprises a sense amplifier circuit amplifying a signal transmitted through the bit line, first / second data lines transmitting the signal amplified by the sense amplifier circuit, a read amplifier circuit driven by a first voltage and amplifying the signal; first / second switch circuits controlling connection between the above components, first / second voltage setting circuits setting the second / third data lines to a second voltage lower than the first voltage. A predetermined voltage obtained by adding the second voltage to a threshold voltage of a transistor in the second / third switch circuit is applied to the gate terminal thereof, and ends of the data lines are connected to the source and drain terminals thereof.

An output voltage is generated, in that an initializable current source is transferred into a current-conducting state by an initializing signal produced by an initializing unit, and then provides current to a voltage-limiting element. The output voltage is tapped from the voltage-limiting element. Thereby, a small operating current consumption can be achieved with a large supply voltage range.

To provide a voltage regulator that improves an undershoot characteristic with a low current consumption. A voltage regulator includes an error amplifier; an output MOS transistor; and a circuit for detecting that a constant voltage to which an output voltage is to be controlled is lower than a desired value, and increasing an operating current of the error amplifier.