2results about How to "Reduce leakage path" patented technology

This invention relates to a nitride semiconductor epitaxial wafer, its fabrication method, and optoelectronic devices. The nitride semiconductor epitaxial wafer comprises a substrate, a first n-type nitride layer, a nitride control layer, a composite nanopillar structure layer, a nitride buffer layer, a second n-type nitride layer, a light-emitting layer, and a p-type nitride layer, stacked sequentially. The composite nanopillar structure layer includes a first nanopillar spacer unit and a second nanopillar spacer unit. The height of the first nanopillar spacer unit is greater than the height of the second nanopillar spacer unit. The first nanopillar spacer unit includes a first metal microstructure, a first nanopillar, and a first top unit. The second nanopillar spacer unit includes a second metal microstructure, a second nanopillar, and a second top unit. By adopting the solution provided by this invention, the probability of dislocation extension to the light-emitting layer is reduced, leakage channels are reduced, and radiative recombination is enhanced, thereby improving the brightness, leakage current, and ESD antistatic discharge performance of the epitaxial wafer.

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.