74results about How to "Reduce leakage path" patented technology

A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second terminal serves as storage node, third terminal is floating, and fourth terminal serves as bit line, wherein back channel effect is suppressed adding additional ions in the bottom side of third terminal or applying negative voltage in the well or substrate. A capacitor plate couples to second terminal, which plate has no coupling region to first, third and fourth terminal. With no coupling, the inversion layer of plate in the storage node is isolated from the adjacent nodes. In doing so, the plate can swing ground level to positive supply level to write. As a result, no negative generator is required for controlling plate. Word line and bit line keep ground level during standby, and rise to supply level for read or write operation. In this manner, no holding current is required during standby, and operating current is dramatically reduced with no negative generator. Write has a sequence to clear the state of cell before writing to store data regardless of previous state. Refresh cycle is periodically asserted to sustain data. The present invention can be applied for destructive read, or for nondestructive read adding pull-down device to bit line. The height of cell is almost same as control circuit on the bulk or SOI wafer.

A radar level gauge system for determining a filling level of a product contained in a tank, comprising: a transceiver for generating, transmitting and receiving frequency-modulated electromagnetic signals; a transmitting propagating device electrically connected to the transceiver and arranged to propagate transmitted electromagnetic signals towards a surface of the product contained in the tank; and a receiving propagating device electrically connected to the transceiver and arranged to return echo signals resulting from reflections at impedance transitions encountered by the transmitted electromagnetic signals, including a surface echo signal resulting from reflection at the surface, back to the transceiver. A signal isolation between the transmitting propagating device and the receiving propagating device is at least 30 dB, and the transceiver comprises: a signal generator for generating a frequency-modulated signal having a predetermined center frequency; a transmitter branch connecting an output of the signal generator with the transmitting propagating device via a first frequency converter for converting the frequency of the frequency-modulated signal to provide the transmitted electromagnetic signal; a receiver branch connected to the receiving propagating device for receiving the surface echo signal; and a mixer having a first input connected to the signal generator via a second frequency converter for converting the frequency of the frequency-modulated signal and a second input connected to the receiver branch, for forming an intermediate frequency signal indicative of a phase difference between the transmitted electromagnetic signal and the surface echo signal. The radar level gauge system further comprising processing circuitry connected to the transceiver for determining the filling level based on the intermediate frequency signal.

This application discloses a GaN-based III-V compound semiconductor LED (light emitting diode) epitaxial wafer and a production method thereof. The GaN-based III-V compound semiconductor LED epitaxial wafer structurally comprises a substrate, a low temperature GaN buffer layer, a first high temperature non-doped GaN layer and a second high temperature non-doped GaN layer, wherein an AlGaN / GaN superlattice layer is formed on the second high temperature non-doped GaN layer, a high temperature N type GaN layer is formed on the AlGaN / GaN superlattice layer, a stress release layer, an MQW protection layer, a P type electron barrier layer and a high temperature P type GaN layer are formed on the high temperature N type GaN layer, a contact layer is formed on the high temperature P type GaN layer, SiN mask / N type GaN layers are periodically inserted into the high temperature N type GaN layer, and the number of periods of the SiN mask / N type GaN layers ranges from 5 to 20. The GaN-based III-V compound semiconductor LED epitaxial wafer has the advantages of signally improving antistatic ability, effectively enhancing recombination efficiency of current carriers, and improving internal quantum efficiency of an LED.

A linear pretensioner device for motor vehicle belt restraint systems of the type mountable to a motor vehicle structure and coupled with a belt restraint system component. In one form, the linear pretensioner includes a stroking housing forming a bore and a cable coupled with the stroking housing and to the belt restraint component. A main housing adapted to be fixed to the motor vehicle structure is positioned within the bore of the stroking housing, with the stroking housing telescopically overfitting the main housing. The main housing and the stroking housing form an expanding chamber that enlarges when pressurized by a gas generator. Upon activation, the gas generator drives the stroking housing along the main housing to exert tension on the cable. In another form, the pretensioner has an inner housing positioned within a bore of an outer housing, and the cable is coupled with the inner housing.

The invention discloses a pixel circuit and a display panel, and a light-emitting control module of the pixel circuit is used for controlling a light-emitting module to emit light according to a driving signal output by a driving module according to a signal on a light-emitting control signal line. A first initialization module is used for writing initialization voltage into the control end of the driving module according to a signal on a first scanning line, the first end of the compensation module is connected with the first end of the driving module, and the second end of the compensation module is connected with the control end of the driving module through the electric leakage suppression module, and a compensation module is used for performing threshold compensation on the driving module according to the signal on the second scanning line, an electric leakage suppression module is used for suppressing electric leakage of the storage module. The storage module in the embodiment of the invention leaks electricity only through the electricity leakage suppression module, that is, only one electricity leakage path exists, so that the electricity leakage path and the magnitude of leakage current are reduced, the voltage stability of the control end of the driving module is favorably maintained, and the phenomenon that the light-emitting module flickers when emitting light due to the current change of the driving module is improved.

The invention discloses a resistive random access memory unit and a resistive random access memory. The resistive random access memory unit comprises a resistive random access memory and a double-state resistor, wherein the resistive random access memory and the double-state resistor are connected in series. A positive electrode and a negative electrode of the double-state resistor all can provide large working currents and thus a leakage passage in an intersection array is reduced so that read crosstalk is eliminated.

The invention discloses a metal-based high-temperature insulation layer and a preparation method thereof and belongs to the technical field of thin film materials. The metal-based high-temperature insulation layer is formed by six layers including, successively from bottom to top, an alloy substrate 1, an NiCrAlY alloy transition layer 2, an [alpha]-Al2O3 layer 3, a crystalline-state YSZ layer 4, an amorphous-state YSZ layer 5 and an Al2O3 layer 6, wherein the [alpha]-Al2O3 layer is obtained through a thermal oxidation method, the crystalline-state YSZ layer and the amorphous-state YSZ layer are both obtained through a sputtering method, and the Al2O3 layer 6 is obtained through an electron beam evaporation method. By means of the insulation layer, excellent electric insulation between a functional layer of a thin film sensor and a metal substrate can be ensured at least below 800 DEG C. An insulation resistance is not reduced and is tend to increase after a long-time annealing process at a high temperature. By means of the insulation layer, a normal operation under environments such as high temperature, high stress and the like can be satisfied.

The invention provides an epitaxial growth method for improving reverse electric leakage of a GaN-based light-emitting diode (LED). An epitaxial structure for inhibiting linear dislocation comprises a 50-200nm non-doped u-Al GaN epitaxial layer inserted at the 4 / 5 thickness of a high-temperature u-GaN layer, 4-8 periodic n-Al GaN / GaN superlattice layers inserted at the 1 / 3 thickness of the high-temperature u-GaN layer, and a 2-6nm low-doped n-Al GaN layer growing behind a low-doped n-GaN layer; (2) an epitaxial structure for inhibiting V-type detect electric leakage comprises a 10-50nm non-doped Al GaN layer growing behind the last base of a multi-quantum well (MQW), and a 50-200nm low-doped p-Al GaN layer inserted between a low-temperature p-GaN layer and a high-temperature p-GaN layer. After the epitaxial growth method is adopted, the linear dislocation and the V-type detect density in a GaN epitaxial layer can be effectively reduced, electric leakage channels in a chip can be reduced, and the reverse electric leakage of the chip is effectively improved; the average value Ir of the electric leakage test of the 9*9mil chip produced by the epitaxy technique is equal to 0.0038mu A @-8V.

The invention provides a lead-tin hybrid perovskite thin film, and a preparation method and an application therefor. The preparation method for the lead-tin hybrid perovskite thin film comprises the specific steps of dissolving PbRE<2> and SnRE<2> into DMF and DMSO mixed solvent to form a PbRE<2> solution and an SnRE<2> solution respectively, wherein RE is CL, Br or I; measuring the PbRE<2> solution and the SnRE<2> solution, and enabling the two kinds of solutions to be mixed to form a precursor liquid; coating a substrate with the precursor liquid in a spin-coating manner; then coating the substrate with a CH<3>NH<3>RE isopropanol solution in a spin-coating manner; and carrying out annealing on the substrate to obtain the hybrid perovskite thin film. According to the lead-tin hybrid perovskite thin film, the lead-tin hybrid perovskite thin film is prepared by a liquid phase two-step method, so that the content of heavy metal-lead in the thin film can be effectively reduced; and in addition, the coverage degree and the mass of the thin film can be improved, the pin holes of the thin film can be reduced, the electric leakage path can be reduced, and the photoelectric conversion efficiency of the prepared lead-tin hybrid perovskite solar cell can be improved.

The invention discloses an LED epitaxial growth method for enhancing the antistatic effect of a device. The method includes processing a sapphire substrate under high temperature, growing an AlN layer on the sapphire substrate, growing an AlxGa (1-x) N layer on the AlN layer, continuously growing an Si-doped N type GaN layer, periodically growing an active layer MQW, continuously growing a P-type AlxGaN layer, continuously growing 100-300nm magnesium-doped P-type GaN layer, cooling to 700-800 DEG C, individually introducing 100-150L / min nitrogen, warming 20-30 ms and then cooling in a furnace. Dislocation due to crystal lattice mismatch is reduced based on the advantages of low crystal lattice mismatch between AlN and sapphire substrate Al2O3 and low crystal lattice mismatch of AlGaN material, AlN and Gan. The dislocation density of an epitaxial layer is reduced, the crystal quality of the epitaxial layer is increased, and the dislocation density is small. When the LED device is under a static high voltage higher than 2kV, the electric leakage channels are fewer, the breakdown probability is reduced, and the antistatic effect is improved. The electric leakage of the LED device is reduced, and the LED product quality is improved.

A linear pretensioner for use as part of a motor vehicle occupant belt restraint system mountable to vehicle structure and coupled with a belt restraint system component. The pretensioner includes at least one base plate having a slot and at least one closure plate fixedly attached to the base plate. The closure plate(s) and the slot of the base plate(s) form a cavity having an open end. A piston plate has a piston tail slidably disposed within the cavity and a piston head extending from the open end. A cable is coupled with the piston plate, the base plate(s), and / or the closure plate(s). The piston plate, the slot of the base plate(s), and the closure plate(s) cooperate to form an expanding chamber that enlarges when pressurized by a gas generator, which drives the piston plate and the base plate relative to each other to exert tension on the cable.

A Faraday cage enclosure for a mobile device with a portion that aligns with a display of the mobile device simultaneously substantially attenuate EM radiation to non-damaging amplitudes and is transparent to visible light in an optical spectrum, an EMP protection circuit electrically connected between the external charging and data port and the internal charging and data port, and a passive repeater configured to EM-couple with an antenna of the mobile device and relay signals to and from the antenna of the mobile device.

The invention discloses an epitaxial structure of a light emitting diode and an epitaxial growth method therefor, and belongs to the technical field of a semiconductor. The epitaxial structure comprises a sapphire substrate, and a GaN buffer layer, a un-doped GaN layer, an N type GaN layer, a shallow well layer, a multi-quantum-well layer, a low-temperature P type GaN layer, a P type AlGaN electron barrier layer, a high-temperature P type GaN layer and a P type GaN contact layer that are laminated on the sapphire substrate in sequence, wherein the epitaxial structure also comprises an AlxGa1-xN buffer layer laminated between the sapphire substrate and the GaN buffer layer; and x is greater than or equal to 0.3 and less than or equal to 0.8. According to the epitaxial structure, the AlxGa1-xN buffer layer is arranged between the sapphire substrate taking Al2O3 as the main ingredient, and the GaN buffer layer, so that defects and dislocation caused by lattice mismatch between the Al2O3 and GaN can be effectively relieved, the electric leakage channels of the light emitting diode are reduced, and the anti-static capability of the light emitting diode is improved.

The application discloses an OLED pixel compensation circuit and a control method thereof so that the grid voltage of the drive transistor changes because of a leakage path existing in the grid voltage of the drive transistor and thus the pixel brightness of the OLED is affected can be solved. The OLED pixel compensation circuit is characterized by comprising a drive transistor, a storage capacitor, a first switching transistor, a second switching transistor and a light-emitting diode. A grid electrode of the drive transistor is connected with a first terminal of the storage capacitor electrically and is connected with a source of the first switching transistor electrically; the first terminal of the storage capacitor is connected with a source of the first switching transistor electrically; a drain of the first switching transistor is connected with a source of the second switching transistor electrically; and an anode of the light-emitting diode is connected with a drain of the drivetransistor and is connected with a drain of the first switching transistor.

The invention provides a semiconductor epitaxial structure, a manufacturing method thereof and an LED chip, and the method comprises the steps of sequentially stacking an N-type semiconductor layer, a gate elimination layer, an active layer and a P-type semiconductor layer on the surface of a substrate. Redundant electrons are released through the design of the epitaxial structure, the electron concentration is effectively improved, the electron tunneling probability is increased, the working voltage of an LED is reduced while the crystal quality is improved, and the anti-static capability of the LED is improved.

The invention discloses an LED chip, an LED chip packaging module and a display device. The LED chip comprises a substrate, a first mesa structure and a second mesa structure, at least one bridging current blocking block; bridging conductive blocks, the number of the bridging conductive blocks is the same as that of the bridging current stop blocks; a first conductive pad and a second conductive pad; wherein the overlooking projection of the bridging current stop block is provided with a head part and a tail part; the overlooking projection of the bridging conductive block is provided with a first contact part, a junction part and a second contact part; the junction part is located in the head part, and the first contact part is located in the tail part; the portion, not overlapped with the junction portion, of the head portion has a first width, the portion, not overlapped with the first contact portion, of the tail portion has a second width, and the first width is larger than the second width; reliability of the LED chip is improved.

The embodiment of the invention provides a pixel circuit, a driving method and a display. The pixel circuit comprises a data writing unit, a driving unit, a light emitting unit and an initializing unit. The data writing unit is electrically connected with the driving unit through the first node. The driving unit is electrically connected with the initialization unit through a second node. The driving unit is electrically connected with the light-emitting unit and the initialization unit through a third node. The initialization unit is used for initializing the second node by using the initialization voltage. And the data writing unit is used for setting the voltage of the first node as the voltage of the data signal and updating the voltage of the second node through the driving unit and the initialization unit. The driving unit is used for generating driving current to drive the light-emitting unit to emit light according to the first control signal. Due to the fact that initialization and voltage compensation of the second node are achieved at the same time through the path of the initialization unit, electric leakage paths of the storage capacitor are reduced, the electric leakage amount of the storage capacitor in the light emitting stage is reduced, and the quality of a display image is improved.

A pixel circuit is disclosed. The pixel circuit includes a photodiode (PD), a transmission circuit, a reset circuit, a signal storage circuit and a buffer circuit. The transmission circuit is coupled between the PD and an ordinary floating diffusion (FD) node. The reset circuit is coupled to the ordinary FD node. The signal storage circuit is coupled to the ordinary FD node. The buffer circuit is coupled to the signal storage circuit. The signal storage circuit may store a PD signal on a specific node having a reduced leakage path in comparison with the ordinary FD node during a holding phase of the pixel circuit, wherein the holding phase is a time interval starting from a first time point at which the PD signal is stored on the specific node and ending at a second time point at which the pixel circuit is selected for performing a read-out operation.

The invention discloses an ScAlN / GaN double-barrier resonant tunneling diode and a manufacturing method thereof. The ScAlN / GaN double-barrier resonant tunneling diode mainly solves the problems that an existing gallium nitride resonant tunneling diode is low in peak current, small in peak-valley current ratio and asymmetric in differential negative resistance effect. The ScAlN / GaN double-barrier resonant tunneling diode comprises a substrate, a GaN epitaxial layer, an n+GaN emitter ohmic contact layer, a GaN isolation layer, a first barrier layer, a GaN quantum well layer, a second barrier layer, an isolation layer, a collector ohmic contact layer and a collector electrode from bottom to top, wherein the two barrier layers both adopt ScAlN which has an Sc component range of 15% to 20% and a thickness of 1-3 nm and is identical in the Sc component and thickness; the isolation layer is made of InN with a thickness of 2-4 nm; and the collector ohmic contact layer adopts n+InN. The ScAlN / GaN double-barrier resonant tunneling diode is high in peak current, large in peak-valley current ratio, capable of achieving forward and reverse symmetrical differential negative resistance effect, high in working frequency and output power and applicable to a high-frequency terahertz radiation source and a high-speed digital circuit.

A sealing system for use in a rotary vane actuator having a stator and a rotor coupled to the stator. The rotor or the stator has a vane. The rotor or the stator has a groove within which the seal is positioned. The stator, the rotor and the seal coact to define a chamber. The vane being movable thereby altering a volume of the chamber, with the seal being continuous.

A shield gate MOSFET includes an epitaxial layer having a first conductivity type, a plurality of trenches in the epitaxial layer, a shield gate disposed in the trenches, a control gate on the shield gate in the trenches, an insulating layer between the shield gate and the epitaxial layer, a gate oxide layer between the control gate and the epitaxial layer, an inter-gate oxide layer between the shield gate and the control gate, a first doped region in the epitaxial layer at the bottom of the trenches, and a second doped region between the bottom of the trenches and the first doped region. The first doped region has a second conductivity type, and the second doped region has the first conductivity type, and thus the leakage path may be reduced in the presence of the second doped region so as to improve breakdown voltage.

The present invention relates to small vehicles such as lawn and garden tractors and more specifically to an oil filter cartridge or assembly usable with the transmissions of such vehicles. The cartridge is comprised of a filtering element, a strainer element and a by-pass valve. The by-pass valve is housed within the strainer element and is adapted to direct oil flow through the strainer element, but not the filter element when the oil viscosity is high and only through the filter element when the oil viscosity is low. In this way, the parasitic horsepower loss caused by routing oil through the strainer element at all times is eliminated. The cartridge is also housed within the transmission case to reduce mounting bracketry outside the transmission case and minimize the likelihood of insufficient oil supply available for the filter, pump and hydraulic system functions.

A semiconductor device structure, for improving the metal gate leakage within the semiconductor device. A structure for a metal gate electrode for a n-type Field Effect Transistor includes a capping layer; a first metal layer comprising Ti and Al over the capping layer; a metal oxide layer over the first metal layer; a barrier layer over the metal oxide layer; and a second metal layer over the barrier layer.