4results about How to "Reduce leakage path" patented technology

The application relates to a chemical raw material grinder, and belongs to the technical field of grinding equipment, which comprises a grinding tank, a sliding sleeve rod slidably connected in the interior of the grinding tank, a grinding head slidably connected in the interior of the grinding tank, a bottom end of the sliding sleeve rod fixedly connected with the grinding head, equidistantly fixedly connected gas outlet pipes in the interior of the grinding head, and a gas tank fixedly connected at the top of the grinding tank. The application has the beneficial effect that the close grinding space formed by the combination of the grinding tank and the grinding head can reduce the leakage path of the chemical raw material, the whole grinding operation is completed in the grinding tank, the workshop environmental pollution and safety hazards caused by the leakage of the raw material can be reduced, the cleaning cost in the production process is reduced, meanwhile, the air pump supplies air to the gas outlet pipe through the gas tank, the fixed pipe and the bellows, the airflow sprayed through the dust screen can blow away the accumulated raw material, the raw material can be ensured to fully contact the grinding head, and the uneven grinding phenomenon caused by the local accumulation can be avoided.

This invention relates to a nitride semiconductor epitaxial wafer, its fabrication method, and optoelectronic devices. The nitride semiconductor epitaxial wafer comprises a substrate, a first n-type nitride layer, a nitride control layer, a composite nanopillar structure layer, a nitride buffer layer, a second n-type nitride layer, a light-emitting layer, and a p-type nitride layer, stacked sequentially. The composite nanopillar structure layer includes a first nanopillar spacer unit and a second nanopillar spacer unit. The height of the first nanopillar spacer unit is greater than the height of the second nanopillar spacer unit. The first nanopillar spacer unit includes a first metal microstructure, a first nanopillar, and a first top unit. The second nanopillar spacer unit includes a second metal microstructure, a second nanopillar, and a second top unit. By adopting the solution provided by this invention, the probability of dislocation extension to the light-emitting layer is reduced, leakage channels are reduced, and radiative recombination is enhanced, thereby improving the brightness, leakage current, and ESD antistatic discharge performance of the epitaxial wafer.

The application discloses a light emitting diode and a preparation method thereof. The light emitting diode comprises a silicon substrate, a buffer layer, an unintentionally doped layer, a gallium nitride composite layer, a multi-quantum well light emitting layer, an electron blocking layer and a first gallium nitride layer which are stacked in sequence. The gallium nitride composite layer comprises a second gallium nitride layer with a first doping concentration, an aluminum gallium nitride layer, a third gallium nitride layer with a second doping concentration and a fourth gallium nitride layer with a third doping concentration which are stacked in sequence. The first doping concentration is higher than the third doping concentration, and the third doping concentration is higher than the second doping concentration. The light emitting diode can effectively improve the crystal quality and electron migration of gallium nitride in the gallium nitride composite layer, reduce the leakage channel, and thus improve the anti-static capacity and reverse leakage capacity of the light emitting diode by optimizing the structure of the light emitting diode and limiting the doping gradient in the gallium nitride layer.

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.