74results about How to "Reduce leakage path" patented technology

A radar level gauge system for determining a filling level of a product contained in a tank, comprising: a transceiver for generating, transmitting and receiving frequency-modulated electromagnetic signals; a transmitting propagating device electrically connected to the transceiver and arranged to propagate transmitted electromagnetic signals towards a surface of the product contained in the tank; and a receiving propagating device electrically connected to the transceiver and arranged to return echo signals resulting from reflections at impedance transitions encountered by the transmitted electromagnetic signals, including a surface echo signal resulting from reflection at the surface, back to the transceiver. A signal isolation between the transmitting propagating device and the receiving propagating device is at least 30 dB, and the transceiver comprises: a signal generator for generating a frequency-modulated signal having a predetermined center frequency; a transmitter branch connecting an output of the signal generator with the transmitting propagating device via a first frequency converter for converting the frequency of the frequency-modulated signal to provide the transmitted electromagnetic signal; a receiver branch connected to the receiving propagating device for receiving the surface echo signal; and a mixer having a first input connected to the signal generator via a second frequency converter for converting the frequency of the frequency-modulated signal and a second input connected to the receiver branch, for forming an intermediate frequency signal indicative of a phase difference between the transmitted electromagnetic signal and the surface echo signal. The radar level gauge system further comprising processing circuitry connected to the transceiver for determining the filling level based on the intermediate frequency signal.

This application discloses a GaN-based III-V compound semiconductor LED (light emitting diode) epitaxial wafer and a production method thereof. The GaN-based III-V compound semiconductor LED epitaxial wafer structurally comprises a substrate, a low temperature GaN buffer layer, a first high temperature non-doped GaN layer and a second high temperature non-doped GaN layer, wherein an AlGaN/GaN superlattice layer is formed on the second high temperature non-doped GaN layer, a high temperature N type GaN layer is formed on the AlGaN/GaN superlattice layer, a stress release layer, an MQW protection layer, a P type electron barrier layer and a high temperature P type GaN layer are formed on the high temperature N type GaN layer, a contact layer is formed on the high temperature P type GaN layer, SiN mask/N type GaN layers are periodically inserted into the high temperature N type GaN layer, and the number of periods of the SiN mask/N type GaN layers ranges from 5 to 20. The GaN-based III-V compound semiconductor LED epitaxial wafer has the advantages of signally improving antistatic ability, effectively enhancing recombination efficiency of current carriers, and improving internal quantum efficiency of an LED.

A linear pretensioner device for motor vehicle belt restraint systems of the type mountable to a motor vehicle structure and coupled with a belt restraint system component. In one form, the linear pretensioner includes a stroking housing forming a bore and a cable coupled with the stroking housing and to the belt restraint component. A main housing adapted to be fixed to the motor vehicle structure is positioned within the bore of the stroking housing, with the stroking housing telescopically overfitting the main housing. The main housing and the stroking housing form an expanding chamber that enlarges when pressurized by a gas generator. Upon activation, the gas generator drives the stroking housing along the main housing to exert tension on the cable. In another form, the pretensioner has an inner housing positioned within a bore of an outer housing, and the cable is coupled with the inner housing.

The invention discloses a pixel circuit and a display panel, and a light-emitting control module of the pixel circuit is used for controlling a light-emitting module to emit light according to a driving signal output by a driving module according to a signal on a light-emitting control signal line. A first initialization module is used for writing initialization voltage into the control end of the driving module according to a signal on a first scanning line, the first end of the compensation module is connected with the first end of the driving module, and the second end of the compensation module is connected with the control end of the driving module through the electric leakage suppression module, and a compensation module is used for performing threshold compensation on the driving module according to the signal on the second scanning line, an electric leakage suppression module is used for suppressing electric leakage of the storage module. The storage module in the embodiment of the invention leaks electricity only through the electricity leakage suppression module, that is, only one electricity leakage path exists, so that the electricity leakage path and the magnitude of leakage current are reduced, the voltage stability of the control end of the driving module is favorably maintained, and the phenomenon that the light-emitting module flickers when emitting light due to the current change of the driving module is improved.

The invention discloses a resistive random access memory unit and a resistive random access memory. The resistive random access memory unit comprises a resistive random access memory and a double-state resistor, wherein the resistive random access memory and the double-state resistor are connected in series. A positive electrode and a negative electrode of the double-state resistor all can provide large working currents and thus a leakage passage in an intersection array is reduced so that read crosstalk is eliminated.

A linear pretensioner for use as part of a motor vehicle occupant belt restraint system mountable to vehicle structure and coupled with a belt restraint system component. The pretensioner includes at least one base plate having a slot and at least one closure plate fixedly attached to the base plate. The closure plate(s) and the slot of the base plate(s) form a cavity having an open end. A piston plate has a piston tail slidably disposed within the cavity and a piston head extending from the open end. A cable is coupled with the piston plate, the base plate(s), and/or the closure plate(s). The piston plate, the slot of the base plate(s), and the closure plate(s) cooperate to form an expanding chamber that enlarges when pressurized by a gas generator, which drives the piston plate and the base plate relative to each other to exert tension on the cable.

The invention provides a semiconductor epitaxial structure, a manufacturing method thereof and an LED chip, and the method comprises the steps of sequentially stacking an N-type semiconductor layer, a gate elimination layer, an active layer and a P-type semiconductor layer on the surface of a substrate. Redundant electrons are released through the design of the epitaxial structure, the electron concentration is effectively improved, the electron tunneling probability is increased, the working voltage of an LED is reduced while the crystal quality is improved, and the anti-static capability of the LED is improved.

The embodiment of the invention provides a pixel circuit, a driving method and a display. The pixel circuit comprises a data writing unit, a driving unit, a light emitting unit and an initializing unit. The data writing unit is electrically connected with the driving unit through the first node. The driving unit is electrically connected with the initialization unit through a second node. The driving unit is electrically connected with the light-emitting unit and the initialization unit through a third node. The initialization unit is used for initializing the second node by using the initialization voltage. And the data writing unit is used for setting the voltage of the first node as the voltage of the data signal and updating the voltage of the second node through the driving unit and the initialization unit. The driving unit is used for generating driving current to drive the light-emitting unit to emit light according to the first control signal. Due to the fact that initialization and voltage compensation of the second node are achieved at the same time through the path of the initialization unit, electric leakage paths of the storage capacitor are reduced, the electric leakage amount of the storage capacitor in the light emitting stage is reduced, and the quality of a display image is improved.

The invention discloses an ScAlN/GaN double-barrier resonant tunneling diode and a manufacturing method thereof. The ScAlN/GaN double-barrier resonant tunneling diode mainly solves the problems that an existing gallium nitride resonant tunneling diode is low in peak current, small in peak-valley current ratio and asymmetric in differential negative resistance effect. The ScAlN/GaN double-barrier resonant tunneling diode comprises a substrate, a GaN epitaxial layer, an n+GaN emitter ohmic contact layer, a GaN isolation layer, a first barrier layer, a GaN quantum well layer, a second barrier layer, an isolation layer, a collector ohmic contact layer and a collector electrode from bottom to top, wherein the two barrier layers both adopt ScAlN which has an Sc component range of 15% to 20% and a thickness of 1-3 nm and is identical in the Sc component and thickness; the isolation layer is made of InN with a thickness of 2-4 nm; and the collector ohmic contact layer adopts n+InN. The ScAlN/GaN double-barrier resonant tunneling diode is high in peak current, large in peak-valley current ratio, capable of achieving forward and reverse symmetrical differential negative resistance effect, high in working frequency and output power and applicable to a high-frequency terahertz radiation source and a high-speed digital circuit.

A sealing system for use in a rotary vane actuator having a stator and a rotor coupled to the stator. The rotor or the stator has a vane. The rotor or the stator has a groove within which the seal is positioned. The stator, the rotor and the seal coact to define a chamber. The vane being movable thereby altering a volume of the chamber, with the seal being continuous.

A shield gate MOSFET includes an epitaxial layer having a first conductivity type, a plurality of trenches in the epitaxial layer, a shield gate disposed in the trenches, a control gate on the shield gate in the trenches, an insulating layer between the shield gate and the epitaxial layer, a gate oxide layer between the control gate and the epitaxial layer, an inter-gate oxide layer between the shield gate and the control gate, a first doped region in the epitaxial layer at the bottom of the trenches, and a second doped region between the bottom of the trenches and the first doped region. The first doped region has a second conductivity type, and the second doped region has the first conductivity type, and thus the leakage path may be reduced in the presence of the second doped region so as to improve breakdown voltage.

The present invention relates to small vehicles such as lawn and garden tractors and more specifically to an oil filter cartridge or assembly usable with the transmissions of such vehicles. The cartridge is comprised of a filtering element, a strainer element and a by-pass valve. The by-pass valve is housed within the strainer element and is adapted to direct oil flow through the strainer element, but not the filter element when the oil viscosity is high and only through the filter element when the oil viscosity is low. In this way, the parasitic horsepower loss caused by routing oil through the strainer element at all times is eliminated. The cartridge is also housed within the transmission case to reduce mounting bracketry outside the transmission case and minimize the likelihood of insufficient oil supply available for the filter, pump and hydraulic system functions.