7results about How to "Reduce leakage path" patented technology

LED chip, LED chip packaging module and display device. The LED chip includes: a substrate, a first table structure and a second table structure; at least one bridging current blocking block; a bridging conductive block, the number of which is the same as the number of the bridging current blocking blocks; a first conductive pad and a second conductive pad; the top projection of the bridging current blocking block has a head and a tail; the top projection of the bridging conductive block has a first contact portion, a junction portion and a second contact portion; the junction portion falls within the head portion, and the first contact portion falls within the tail portion; the portion of the head portion that does not overlap with the junction portion has a first width, and the portion of the tail portion that does not overlap with the first contact portion has a second width, and the first width is greater than the second width. The reliability of the LED chip is improved.

The application relates to a chemical raw material grinder, and belongs to the technical field of grinding equipment, which comprises a grinding tank, a sliding sleeve rod slidably connected in the interior of the grinding tank, a grinding head slidably connected in the interior of the grinding tank, a bottom end of the sliding sleeve rod fixedly connected with the grinding head, equidistantly fixedly connected gas outlet pipes in the interior of the grinding head, and a gas tank fixedly connected at the top of the grinding tank. The application has the beneficial effect that the close grinding space formed by the combination of the grinding tank and the grinding head can reduce the leakage path of the chemical raw material, the whole grinding operation is completed in the grinding tank, the workshop environmental pollution and safety hazards caused by the leakage of the raw material can be reduced, the cleaning cost in the production process is reduced, meanwhile, the air pump supplies air to the gas outlet pipe through the gas tank, the fixed pipe and the bellows, the airflow sprayed through the dust screen can blow away the accumulated raw material, the raw material can be ensured to fully contact the grinding head, and the uneven grinding phenomenon caused by the local accumulation can be avoided.

This invention relates to a nitride semiconductor epitaxial wafer, its fabrication method, and optoelectronic devices. The nitride semiconductor epitaxial wafer comprises a substrate, a first n-type nitride layer, a nitride control layer, a composite nanopillar structure layer, a nitride buffer layer, a second n-type nitride layer, a light-emitting layer, and a p-type nitride layer, stacked sequentially. The composite nanopillar structure layer includes a first nanopillar spacer unit and a second nanopillar spacer unit. The height of the first nanopillar spacer unit is greater than the height of the second nanopillar spacer unit. The first nanopillar spacer unit includes a first metal microstructure, a first nanopillar, and a first top unit. The second nanopillar spacer unit includes a second metal microstructure, a second nanopillar, and a second top unit. By adopting the solution provided by this invention, the probability of dislocation extension to the light-emitting layer is reduced, leakage channels are reduced, and radiative recombination is enhanced, thereby improving the brightness, leakage current, and ESD antistatic discharge performance of the epitaxial wafer.

The invention provides a silicon-based OLED strong microcavity anode framework and a preparation method thereof, and belongs to the technical field of semiconductors. According to the silicon-based OLED strong microcavity anode frame, the titanium nitride and the indium tin oxide are sequentially coated on the side wall of the anode layer, so that the corrosion of an anode material is avoided, and the corrosion to anode layer metal possibly caused by a subsequent process can be obviously reduced; and the selection freedom degree of the subsequent micro-cavity thickness is higher. The same number of channels is used, the CMP process is avoided, and the process cost is greatly reduced; the back etching process is carried out after the ITO process, so that the loss of SiO of a pixel space caused by various manufacture procedures is reduced to the greatest extent, the pixel space discontinuity is improved, and the anode flatness is improved, thereby reducing the distortion of an EL device during evaporation, reducing the leakage path of the device, remarkably improving the power consumption of the product and improving the stability of the product; the over-etching loss of the back-etching process is small, and electric leakage caused by distortion can be improved.

The application discloses a light emitting diode and a preparation method thereof. The light emitting diode comprises a silicon substrate, a buffer layer, an unintentionally doped layer, a gallium nitride composite layer, a multi-quantum well light emitting layer, an electron blocking layer and a first gallium nitride layer which are stacked in sequence. The gallium nitride composite layer comprises a second gallium nitride layer with a first doping concentration, an aluminum gallium nitride layer, a third gallium nitride layer with a second doping concentration and a fourth gallium nitride layer with a third doping concentration which are stacked in sequence. The first doping concentration is higher than the third doping concentration, and the third doping concentration is higher than the second doping concentration. The light emitting diode can effectively improve the crystal quality and electron migration of gallium nitride in the gallium nitride composite layer, reduce the leakage channel, and thus improve the anti-static capacity and reverse leakage capacity of the light emitting diode by optimizing the structure of the light emitting diode and limiting the doping gradient in the gallium nitride layer.

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.

The present invention provides a semiconductor epitaxial structure and a manufacturing method thereof, and an LED chip, comprising stacking an N-type semiconductor layer, a gate-eliminating layer, an active layer, and a P-type semiconductor layer in sequence on the surface of the substrate, and releasing excess electrons through epitaxial structure design, effectively improving electron concentration, increasing the probability of electron tunneling, improving crystal quality, and reducing the operating voltage of the LED, thereby improving the antistatic ability of the LED.