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The application discloses an InGaN nanocolumn-based optoelectronic memristor and a preparation method and application thereof. The composition of the InGaN nanocolumn-based optoelectronic memristor comprises a substrate, an InGaN functional layer, a first Schottky contact electrode and a second Schottky contact electrode, the InGaN functional layer is arranged on the surface of the substrate, the InGaN functional layer is composed of a plurality of InGaN nanocolumns epitaxially grown on the surface of the substrate, and the first Schottky contact electrode and the second Schottky contact electrode are arranged on the side of the InGaN functional layer away from the substrate. The InGaN nanocolumn-based optoelectronic memristor has the advantages of stable resistance state change, long resistance state retention time and the like, is suitable for neural network algorithm and image recognition application, and has simple structure and simple preparation process, and is suitable for large-scale industrial production and application.