1694 results about "High stress" patented technology

A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.

A double shouldered high torque resistance threaded connection for drill stem components having enhanced resistance to torque forces, tensile loads and material stress and fatigue is disclosed. The tool joint is provided with threads having a 75 DEG included angle between the thread flanks thereof and with generally elliptical root surfaces to minimize material stress and fatigue during operation under high torque and high tensile loads. When made up, the double intrerengaging shoulders of the threaded tool joint are in firm face to face engagement permitting torque forces and tensile loads to propagate through the tool joint in a manner that minimizes bending forces and minimizes high stress concentration so that the resulting service life of the tool joint is significantly enhanced.

A Ball Grid Array package having an increased fatigue life and improved conductive pad adhesion strength, as well as providing sufficient wiring space within the package, is disclosed. In particular, solder joints having a combination of mask-defined and pad-defined solder joint profiles are formed using a mask having non-circular elongated openings. The non-circular elongated openings of the mask have a major axis and a minor axis, such that the dimension of the openings along the major axis is greater than the diameter of the conductive pads, and the dimension of the openings along the minor axis is less than the diameter of the conductive pads. In addition, the major axis of the openings within the mask are selectively oriented in the direction of highest stress for each solder joint within the package, while providing ample wiring space therein.

The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively or high tensilely stressed film, after post silicide spacer removal, over gate electrodes and strained Si source/drain regions of P-channel or N-channel transistors, respectively.

Compositions are provided comprising aqueous dispersions of electrically conducting organic polymers and a plurality of nanoparticles wherein pH can be adjusted for improved organic electronic device performance. Films deposited from invention compositions are useful as buffer layers in electroluminescent devices, such as organic light emitting diodes (OLEDs) and electrodes for thin film field effect transistors. Buffer layers containing nanoparticles may have a much lower conductivity than buffer layers without nanoparticles. In addition, when incorporated into an electroluminescent (EL) device, buffer layers according to the invention contribute to higher stress life of the EL device.

A golf club head formed of multiple materials is disclosed. Those portions of the club head that are subject to high stresses during normal use of the golf club head are formed of a metallic material. Most of the material beyond what is required to maintain structural integrity, however, is removed and replaced with a lightweight material. This freed-up mass that can be redistributed to other, more beneficial locations of the club head. The lightweight material also damps vibrations generated during use of the golf club. This vibration damper may be retained in a state of compression to enhance the vibration damping. One or more weight members may be included to obtain desired center of gravity position, moments of inertia, and other club head attributes. A insert formed of multiple materials and having regions of varying thickness may also be included on a rear surface of the club head.

A semiconductor device with TSV and its fabrication method are revealed. The semiconductor device primarily comprises a chip and a flexible metal wire inside. A redistributed trace layer and a passivation layer are formed on the active surface of the chip. A through hole penetrates the chip from the active surface to the back surface, in which an insulation layer is disposed. The flexible metal wire has a first terminal and a second terminal where the first terminal is bonded to a redistributed pad of the redistributed trace layer and the second terminal passes through the through hole and protrudes from the back surface of the chip. Therefore, the flexible metal wire passing through the chip has two protruded integral terminals to achieve high stress resistance TSV with lower costs for good electrical connections of vertical stacking chips.

Compositions are provided comprising aqueous dispersions of electrically conducting organic polymers and a plurality of nanoparticles. Films cast from invention compositions are useful as buffer layers in organic electronic devices, such as organic light emitting diodes (OLEDs) and electrodes for thin film field effect transistors. Buffer layers containing nanoparticies have a much lower conductivity than buffer layers without nanoparticles. In addition, when incorporated into an electroluminescent (EL) device, buffer layers according to the invention contribute to higher stress life of the EL device.

The invention discloses a hydraulic fracturing technology for a horizontal well with fractures. The hydraulic fracturing technology comprises the following steps in sequence: (1), according to on-site information, calculating the stress difference values caused by major fractures and adjacent fractures; (2), according to the stress difference values caused by the major fractures and the adjacent fractures, calculating the pressure required when the fracture turns; (3), according to the pressure required when the fracture turns, determining the intensity of temporary plugging agents, and calculating the corresponding construction displacement; (4), according to the design parameters, conducting the segmental multi-cluster fracturing and impulse-type temporary plugging pressurizing technology on a reservoir stratum simultaneously. The hydraulic fracturing technology is mainly based on the horizontal stress difference drop-out values caused by the major fractures and the adjacent fractures, and simultaneously adopts the segmental multi-cluster fracturing and impulse-type temporary plugging pressurizing technology to force the fracture to turn, breaks through the technical bottleneck that the fractures are difficult to form in the stratum with a high stress difference and rudimentary natural fractures, and fills in the blank in the prior art.

The invention belongs to the technical field of concrete reinforcement and relates to a method for reinforcing concrete with a fibrage net and a cement-based material. The method is to pour the fibrage net the total thickness of which is between 10 and 20 millimeters and fine concrete on the outer surface of a structure, and is characterized by comprising the following steps that: drilling holes on the surface of the structure in the process of construction; using the short end foot of a U-shaped shear resistant pin of which the two end feet have different lengths to hook the fibrage net, and inserting the long end foot thereof into the hole after a building structural adhesive is smeared on the long end foot; spraying the fine concrete after the adhesive is solidified; using the short end foot of a U-shaped hook of which the two end feet have different lengths to hook a second layer fibrage net, and inserting the long end foot thereof to the fine concrete; and spraying the fine concrete. The method can avoid the generation of interface micro cracks at high stress, effectively prevent interface peeling damages, reinforces building structures reliably, simply, efficiently and environmental protection, and is applicable to reinforcing and repairing various types of structures.

A method and structure for producing CMOS devices having thin gates with enhanced stress in a stressed channel is provided. The method allows for producing a CMOS device with a relatively thin gate to provide improved gate response characteristics. Additionally, the structure includes a first stressed film having a raised portion which extends above a top surface of the thin gate. By providing a raised portion of the first stressed film extending about a top surface of the gate, a relatively thick layer of the first stressed film as compared to the thickness of the thin gate is included in the CMOS device and thus allows for higher stress levels in the stressed channel. Additionally, a second stressed film having a stress direction opposite to that of the first stressed film may be included above the thin gate to further enhance the stress in the stressed channel of the CMOS device.

The invention provides a polymer modified asphalt, and the weight of the components comprising as follows :45-55% matrix asphalt, 4 - 8% blend oil, 12 - 14% of SBS ,5-9 % APAO, 2-7% of High-temperature improvement and 15-20% filler. It also offers polymer modified asphalt, which made of waterproof membrane and the railway bridge, highway bridge deck waterproofing project applications. The invention of these waterproofing membrane have a high standard of waterproof function, it can withstand high intensity of railway bridge and particularly high stress dynamic load .It also have excellent performance on water-resistance, high and low temperature resistance, adhesion, crack resistance, fatigue resistance and other aspects .it can be used for railway bridge and the road deck waterproofing works.