Photoconductive type ultraviolet detector

An ultraviolet detector and detector technology, applied in photovoltaic power generation, semiconductor devices, color/spectral characteristic measurement, etc., can solve the problems of high production cost and complicated preparation, and achieve the effect of low cost, high sensitivity and simple structure

Inactive Publication Date: 2005-03-02
ZHEJIANG UNIV
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Problems solved by technology

However, Si and SiC are not truly solar-blind materials because they respond to sunlight, and expensive filters need to be installed
GaAlN is currently one of the best choices for solar-blind ultraviolet detector materials, but it has disadvantages such as complicated preparation and high production cost.

Method used

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  • Photoconductive type ultraviolet detector
  • Photoconductive type ultraviolet detector
  • Photoconductive type ultraviolet detector

Examples

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preparation example

[0013] Example of UV detector preparation: In this example, gallium oxide and indium gallium oxide films are obtained by spray pyrolysis. For gallium oxide and indium gallium oxide thin films, the spraying solution is a mixture of gallium chloride and gallium chloride-indium chloride and alcohol respectively, and the preparation method is as follows: for pure gallium oxide film, only need to add Add gallium chloride to water ethanol. For the indium gallium oxide film, an appropriate amount of gallium chloride and indium chloride are dissolved in absolute ethanol according to the required ratio. In this example, the atomic ratio of indium to gallium is 0.3 / 1.7 (that is, x=0.3, or In 0.3 Ga 1.7 o 3 ). In order to avoid the influence of other impurities, the reagents used were of analytical grade. The above solution prepared in proportion was stirred with a magnetic stirrer at 60° C. for 1 hour to form a uniform and transparent solution. The substrate is made of quartz glass...

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Abstract

The invention of light guide ultraviolet sensor consists of pure gallium oxide light filter, indium gallium oxide ultraviolet sensitive film, crossing electrode and insulating substrate from up to down. The ultraviolet sensor uses pure gallium oxide light filter as filtration layer, indium gallium oxide as ultraviolet sensitive layer, which can filter light whose wavelength is smaller than 240mm and make the probe only be sensitive to the light within sun blind area wavelength range. Besides, because of crossing electrode under sensitive film whose surface square receiving light is large, influence of crossing electrode in common light guide probe on surface square receiving light is avoided, resulting high sensitivity. The invention has the advantages of simple structure, high sensitivity and low cost.

Description

technical field [0001] The invention relates to a photoconductive ultraviolet detector. Background technique [0002] Due to the influence of the atmosphere, light waves with wavelengths between 240nm and 280nm in solar radiation are absorbed and cannot reach the surface of the earth. Therefore, this band is called the solar blind zone. Ultraviolet detectors working in solar blind areas will not receive serious interference from solar radiation like infrared detectors, and can work normally under strong sunlight. The ultraviolet detection technology in the solar blind zone has great military and civilian application prospects, and can be widely used in the tail flame detection of aircraft and rockets, missile detection and guidance, ultraviolet security communication technology, fire alarm, etc. Compared with infrared detection technology, ultraviolet detection technology in solar blind zone has certain advantages. Combined with infrared detection, it can be used in militar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/25G01N21/33H01L31/04
CPCY02E10/50
Inventor 季振国杜娟
Owner ZHEJIANG UNIV
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