94 results about "Gallium chloride" patented technology

The invention discloses a production process for extracting gallium from flyash and coal refuse, which recycles gallium by further deep utilizing the produced waste liquid on the basis of extracting alumina, silica gel from coal series solid waste. According to the invention, gallium chloride is acquired after middle temperature calcinations, leaching, carbon dioxide decomposition, direct adsorption on column, eluting, etc., problems of large slag and low slag utilization added value in current technology are solved, the extraction rate of gallium form flyash and coal refuse can reaches over 80%; the whole process is performed under normal atmosphere, thus the equipment requirement is low, resources are effectively utilized during the whole process, and no new pollution is caused to surrounding environment.

A nitride-based semiconductor substrate having a diameter of 25 mm or more, a thickness of 250 micrometers or more, and an optical absorption coefficient of less than 7 cm⁻¹ to light with a wavelength of 380 nm or more. The nitride-based semiconductor substrate is made by the HVPE method that uses gallium chloride obtained by reacting a Ga melt with a hydrogen chloride gas. The Ga melt is contacted with the hydrogen chloride gas for one minute or more to produce the gallium chloride.

The invention provides a preparation method of high-purity and low-loss chalcogenide glass, belonging to a preparation method of the chalcogenide glass. The preparation method comprises the following steps of: removing hydrocarbon impurity in the glass by taking ultra-dry gallium chloride as a purifying agent, and distilling and purifying the glass in combination with the conventional deoxidant, aluminum, magnesium or zirconium metal; placing glass mixture into a quartz ampoule to be sealed in by means of vacuum supply, founding the glass mixture in a vacuum ampoule, dynamically distilling the glass, and remelting the mixture after distilling; and effectively removing the hydrocarbon impurity in the glass by taking the ultra-dry gallium chloride as the purifying agent, so that the Mie scattering imperfection is hardly formed in the finally-obtained high-purity chalcogenide glass, and the low-loss homogeneous glass can be obtained. According to the high-purity chalcogenide glass synthesized by the preparation method provided by the invention, the minimum loss under the infrared transmission waveband is less than 0.3dB/m, and the corresponding loss of the absorption peak of the residual impurity is less than 8dB/m, so that the preparation method can be used in the field of an infrared glass optical element and an infrared optical fiber. The ultra-dry gallium chloride purifying agent can be easily obtained, and is lower in price; the carbon, hydrogen and oxygen impurities can be removed from the chalcogenide glass at high efficiency; the prepared chalcogenide glass is better in uniformity and less in light scattering.

The invention provides a palladium gallium oxide double-metal nano-catalyst capable of efficiently catalyzing methane to combust and preparation and belongs to the technical field of functional materials. PdGa double-metal nano-particles are loaded on a gamma-Al2O3 carrier, and then the carrier is fired to form a Pd-GaOx/Al2O3 catalyst. The loading amount of metal palladium is 1.0wt%. A preparation method comprises the following steps: simultaneously reducing palladium acetylacetonate and gallium chloride in an oleylamine system by adopting a liquid-phase co-reduction method, so as to form PdGa double-metal particles with a uniform size; loading the metal particles on an Al2O3 carrier by adopting an immersion method, wherein the Pd loading amount is 1.0wt%; and firing a load type catalyst at 450 DEG C to form the Pd-GaOx/Al2O3 nano-catalyst. The Pd-GaOx/Al2O3 nano-catalyst prepared by the invention has the advantages that a preparation process is simple, the size of the nano-particles is uniform, and the nano-catalyst has a good application prospect in the field of catalysis.

The invention provides a preparation method of gallium oxide hydroxide nano-crystals and belongs to the technical field of preparation of gallium oxide hydroxide nano-materials. According to the reaction kettle sealed heating alcoholysis method and the liquid-liquid interface reaction principle, through gradually dropwise adding methanol into a gallium oxide benzene solution disposed in an ultrasonic appliance and then enabling the mixed solution to be subjected to sealed low-temperature heating reaction, the prepared sample is white powders. The crystals in nano brush shape and which in smooth in surface, complete in shape and uniform in size are prepared under a preferable condition. According to the invention, the synthesis of gallium oxide hydroxide nano-crystals is carried out by using the alcoholysis reaction method for the first time, the disadvantage that the gallium oxide is very liable to absorb water and be decomposed by moisture is overcome, the operations are finished without adjusting pH (potential of hydrogen) and without using a vacuum condition, the reaction speed of the gallium oxide is significantly inhibited, so that the shape of the generated gallium oxide hydroxide is more easy to control. In addition, the product prepared by the method provided by the invention is high in yield and high in purity; and the preparation method is simple, excellent in repeatability and low in cost.

Production of gallium chloride is carried out by preparing hydrogen chloride gas, chlorination reacting, condensation crystallizing, packing and storing. It achieves sealed reaction environment, simple operation, better quality and high purity of product.

In a creation section of GaN crystal nuclei, a gallium vapor and an ammonia gas are chemically reacted to create GaN crystal nuclei, which are transported into a growth section of GaN powders with a nitrogen carrier gas. In the growth section of GaN powders, a gallium chloride created in a pre-reactor is chemically reacted with the ammonia gas transported from the creation section of GaN crystal nuclei on the GaN crystal nuclei, to produce GaN powders through the crystal growth.

The invention relates to a method for preparing aluminum oxide through hydrochloric acid leaching and two-stage electrolysis of bauxite and comprehensively utilizing aluminum oxide. The method comprises the following steps: carrying out hydrochloric acid leaching, solid-liquid separation and purification on bauxite on bauxite, so as to obtain an iron chloride mixed solution and an aluminum chloride mixed solution; respectively separating and purifying the iron chloride mixed solution and the aluminum chloride mixed solution, so as to obtain scandium chloride, gallium chloride, an aluminum chloride water solution and an iron chloride water solution; setting electrolytic voltage and current density, and respectively carrying out two-stage electrolysis on the aluminum chloride water solution and the iron chloride water solution, so as to respectively obtain aluminum hydroxide, hydrogen and chlorine as well as iron hydroxide, hydrogen and chlorine; preparing a hydrochloric acid solution by using the generated hydrogen and chlorine, and returning the hydrochloric acid solution to a leaching stage for recycling; and roasting aluminum hydroxide, so as to obtain metallurgy level aluminum oxide or chemical aluminum oxide. Compared with a traditional acid method, the electrolysis method for recycling aluminum oxide in the bauxite and processing the bauxite has the advantages that the evaporation step and equipment, the concentration step and equipment are omitted, the operation is simplified, meanwhile, the cost is substantially lowered, and the product has relatively high purity.

The invention discloses a method for preparing and comprehensively utilizing metal aluminum through coal ash pellet chlorination electrolysis. The method comprises the following steps: uniformly mixing coal ash, a carbon source and kaolin in a mass ratio of 1:(2-6):(0.05-0.3) so as to form a mixed material; adding a binding agent which accounts for 1.0-2.0% of the total mass of the mixed material and water which accounts for 2.0-5.0% of the total mass of the mixed material into the mixed material; uniformly mixing, pelletizing, and drying in air; performing chlorination and separation on pellets so as to respectively obtain anhydrous aluminum chloride, silicon tetrachloride and gallium chloride; directly electrolyzing the anhydrous aluminum chloride so as to obtain the metal aluminum and chlorine; feeding back the chlorine into a chlorination procedure; and further purifying the silicon tetrachloride, thereby obtaining polycrystalline silicon and zinc chloride. The method disclosed by the invention is low in cost, cheap and easy in raw material obtaining, complete in chlorination reaction through pelletization and chlorination, simple in operation process and high in electrolysis automation degree, the prepared metal aluminum is relatively high in purity, and raw materials such as chlorine and zinc can be recycled.

The invention discloses a method for preparing and comprehensively utilizing metal aluminum through coal ash pellet chlorination electrolysis. The method comprises the following steps: uniformly mixing coal ash, a carbon source and kaolin in a mass ratio of 1:(2-5):(0.1-0.5) so as to form a mixed material; adding a binding agent and water; pelletizing, and drying in air; performing chlorination, separation and purification so as to respectively obtain anhydrous aluminum chloride, silicon tetrachloride and gallium chloride; converting the anhydrous aluminum chloride into an aluminum chloride solution, controlling voltage and current density, implementing electrolysis so as to obtain aluminum hydroxide, hydrogen and chlorine, and feeding back the chlorine to a chlorination procedure; roasting the aluminum hydroxide so as to obtain metallurgy-level/chemical aluminum oxide; and purifying the silicon tetrachloride. The method disclosed by the invention is low in cost, cheap and easy in raw material obtaining, complete in chlorination reaction through pelletization and chlorination, simple in operation process, high in automation degree and high in product purity, and raw materials such as chlorine and zinc can be recycled.

The invention provides an electrothermal film, which is prepared from tin tetrachloride, antimony chloride, chromium trichloride, gallium chloride and germanium chloride. The invention also provides a coating process and a vapor deposition device. The electrothermal film solves the technical problems that an electrothermal film layer has non-uniform resistance, uneven heat in the process of heating, lower electro-thermal conversion efficiency and short service life of the electrothermal film in the prior art, and simultaneously the technical problem that the unity of the resistance is difficult to control by the conventional electrothermal film production process. Compared with the electrothermal film in the prior art, the electrothermal film of the invention can ensure that the resistance is uniform, the resistance value can be controlled, and insusceptibility to burning and long service life can be achieved; and the adhesiveness of the electrothermal film is greatly improved, no shedding and attenuation, and long service life are ensured, so the electrical property is greatly improved and application range of the electrothermal film is greatly widen.

The invention discloses a preparation method for solar battery materials with three-zone gap tin doped with copper, gallium and sulphur. According to the preparation method for the solar battery materials with the three-zone gap tin doped with the copper, the gallium and the sulphur, copper chloride, gallium chloride, thiourea and stannic chloride are dissolved into ethylene glycol and then are mixed uniformly, a solvothermal synthesis reaction is conducted in a sealed steel-bushing teflon reaction still, then a solvothermal product is washed, filtered and dried, and a product is obtained. It is inferred from the growth mechanism that the preparation method for solar battery materials with the three-zone gap tin doped with the copper, the gallium and the sulphur is suitable for the preparation for the solar battery materials with other transmission metal elements including VIII ( Co, Fe, Ir, Ni, Pd, Rh ) doped with the three-zone gap tin. The obtained product is good in crystallinity, high in purity and uniform in morphology and distribution; an obvious ligh-induced switching effect is possessed, when there is no light, the dark current is nearly zero, and when there is light, the current intensity rises quickly; The preparation method for the solar battery materials with the three-zone gap tin doped with the copper, the gallium and the sulphur has the advantages that the preparation technology is simple, the repeatability is good, the cost is low, the controllability is strong, and the material usage rate is high; sulfidizing is not needed, the resultant temperature is low, and green and environmental protection are possessed.

The invention relates to a method for preparing alkylate oil by catalyzing iso-butane and butylenes preparation by a modified gallium chloride acid ion solution in the field of petrochemical industries. The catalyst has higher activity, selectivity and stability in the alkylation process, so that the alkylate oil prepared by the catalyst is characterized in that the quality and the yield are good and high, the catalyst and the alkylation product are easy to separate, the operation is simple and convenient, the corrosion is small, few side product is generated, and little environment pollution is caused.

The invention provides a gallium-source reactor. The gallium-source reactor at least comprises a reaction layer, a first air inlet pipeline located on the top end of the reaction layer, and a first air outlet pipeline located on the bottom end of the reaction layer, wherein the bottom end of the first air inlet pipeline extends into the reaction layer and is arranged close to the bottom end of the reaction layer, and the top end of the first air outlet pipeline extends into the reaction layer and is arranged close to the top end of the reaction layer. According to the invention, since the bottom end, extending into the reaction layer, of the first air inlet pipeline is arranged close to the bottom end of the reaction layer and the top end, extending into the reaction layer, of the first air outlet pipeline is arranged close to the bottom end of the reaction layer, hydrogen chloride gas enters the reaction layer from the first air inlet pipeline; then since liquid metallic gallium totally soaks the bottom end of the first air inlet pipeline, the hydrogen chloride gas passes through the liquid metallic gallium and reacts with the liquid metallic gallium; eventually produced gallium chloride flows out from the first air outlet pipeline; and thus, the hydrogen chloride gas is allowed to fully react with metal gallium.

An aluminium oxide preparation and comprehensive utilization method through chlorination and electrolysis of fly ash comprises the following steps: chloridizing and separating fly ash to obtain anhydrous aluminium chloride, silicon tetrachloride and gallium chloride; converting anhydrous aluminium chloride into an aluminium chloride water solution; controlling the voltage and the current density, and electrolyzing the aluminium chloride water solution to obtain aluminium hydroxide, hydrogen and chlorine; returning chlorine generated by electrolysis to a chlorination section; roasting aluminium hydroxide to obtain metallurgical-grade/chemical aluminium oxide; and performing distillation purification on silicon tetrachloride to generate polycrystalline silicon and zinc chloride. The aluminium oxide preparation and comprehensive utilization method is low in cost, cheap and easily accessible in raw material, simple in operation process, high in degree of automation and high in product purity, and the adopted raw materials, zinc, chlorine and the like, can be recycled.

Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN thick film with a fine property; and a GaN single crystal growing apparatus. Provided is a manufacturing method of a GaN single crystal by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaCl (gallium chloride); and forming a GaN thin film by a reaction of the generated GaCl (gallium chloride) with NH 3 (ammonia) gas which is hydroxide gas on a substrate, the manufacturing method comprising supplying the NH 3 gas in a vicinity of the substrate (for example, at a position which is separated from the substrate by a distance of 0.7-4.0 times as longer than a diameter of the substrate) through a nozzle. Further, as the substrate, an NGO(011) substrate in which the lattice constant thereof is similar to that of GaN is used.

The invention discloses a preparation method of ionic liquid electrodeposition copper/indium/gallium/selenium CIGS thin-film materials, belonging to the technical field of materials. The method comprises the following steps: 1. measuring ionic liquid BMIm-OTF (1-butyl-3-methylimidazolium trifluoromethanesulfonate), copper chloride, indium chloride, gallium chloride and selenium chloride, putting the ingredients into a sealed electrolytic bath, and uniformly stirring to obtain electroplate liquid; and 2. performing CIGS thin film electrodeposition on a base material of a working electrode by utilizing an electrodeposition method. The invention provides the method for manufacturing CIGS thin films with excellent appearance, and the method is low in cost, reproducible, and the CIGS thin-film materials are easy to prepare, excellent in comprehensive performance, stable in process, good in reproducibility and high in photoelectric conversion efficiency. The band gap width of the materials prepared by the preparation method disclosed by the invention can reach to 1.55 eV, and the charge carrier concentration and the hall coefficient are respectively 2.741*10<20>cm<-3> and 2.277*10<-2> cm<3>/C.