12 results about "Gallium chloride" patented technology

The invention discloses a method for catalyzing degradation of polyolefin mixed plastic by using molten salt. The catalyst is composed of gallium chloride or gallium chloride and other metal chlorides, has a low melting point, high fluidity and strong Lewis acidity, and can degrade polyethylene (PE), polypropylene (PP), polystyrene (PS) plastics and mixtures thereof at 70-170 DEG C under a solvent-free condition to obtain C4-C16 + alkane, olefin and aromatic hydrocarbon. The method is suitable for actual waste plastic resource recovery, and has the advantages of mild conditions, low energy consumption, product controllability and the like.

The invention relates to the technical field of batteries, and discloses an electrolyte preparation method, an electrolyte, an ultrahigh-power lithium thionyl chloride battery and a manufacturing method. The method comprises the following steps: adding solid anhydrous gallium chloride and anhydrous lithium chloride into a round-bottom flask in an argon protection environment, and heating to melt the anhydrous gallium chloride and the anhydrous lithium chloride into liquid; after the round-bottom flask is cooled, thionyl chloride is added into the round-bottom flask and stirred to be partially dissolved, then chlorosulfonic acid is added so that transparent floccules can appear in the solution in the round-bottom flask, a condensation reflux device is installed on the round-bottom flask, and the round-bottom flask is heated so that the transparent floccules in the solution can be completely dissolved. The method comprises the following steps: adding a metal elementary substance lithium sheet into a round-bottom flask in an environment with the relative humidity of less than 1%, installing a condensation reflux device, heating to remove impurities in a solution, cooling the round-bottom flask, enabling sulfur dioxide to sequentially pass through a concentrated sulfuric acid and calcium chloride scrubbing device, and then introducing the sulfur dioxide into the round-bottom flask to remove moisture in the solution so as to prepare the electrolyte.

The invention discloses a thin-layer chromatographic analysis method for detecting radiochemical purity of a gallium chloride [68Ga] solution, and belongs to the field of chemical analysis. According to the method, iTLC-SG thin-layer chromatographic paper is used as a stationary phase, sodium acetate solution-methanol is used as a mobile phase, the radiochemical purity of a gallium chloride [68Ga] solution, a system adaptive solution and a gallium chloride [68Ga] and system adaptive solution is detected by thin-layer chromatography, and the influence of different mobile phases on detection results is investigated. According to the method provided by the invention, the radioactive chemical purity of the gallium chloride [68Ga] solution can be accurately and quickly detected by optimizing the conditions of the stationary phase and the mobile phase, the gallium chloride [68Ga] solution can present symmetrical and sharp chromatographic peaks, the accuracy and reliability of the detection result are ensured, the whole analysis process only needs several minutes from sample application to scanning completion, and the detection result is accurate and reliable. And the high requirement of the transient half-life period of the gallium-68 nuclide on the analysis speed is met.

The invention relates to the technical field of gallium tetrachloride, in particular to a stable gallium tetrachloride crystal material and a preparation method thereof, the crystal is a triclinic system, the space group is shown in the specification, the crystal structure is a zero-dimensional GaCl4 tetrahedral cluster structure, and Ga < 3 + > and four Cl <-> form edge shared tetrahedral coordination. The stable gallium tetrachloride crystal material has a regular triclinic system structure, accurate and controllable lattice parameters, uniform Ga-Cl bond length and bond angle distribution and no obvious lattice defect, the chemical stability and the thermal stability of the crystal are remarkably improved, the hydrolysis rate is low in a normal-temperature and high-humidity environment, the crystal is not easy to decompose at a high temperature, and the application requirements under extreme working conditions can be met.

The invention provides a method and equipment for growing a gallium nitride single crystal based on HVPE (High Vapor Phase Extraction). The growth method comprises the following steps: introducing hydrogen chloride gas into a gallium boat to generate a reactant; the chlorogallium compounds in the reactants comprise a gallium chloride precursor and other chlorogallium compounds; carrying out zone control on the temperature of the gallium boat, and adjusting the partial pressure of the hydrogen chloride gas in real time so as to eliminate metal gallium steam and maintain the ratio of other chlorogallium compounds to the gallium chloride precursor to be 0.15 or below; and introducing ammonia gas and a chlorogallium compound into the second reaction cavity, and reacting to generate the gallium nitride single crystal. The method provided by the invention focuses on the reaction process of the liquid metal gallium and the hydrogen chloride, basically eliminates the evaporation of the metal gallium and inhibits the formation of a high-valence chlorogallium compound by executing temperature adjustment and dynamic adjustment of partial pressure of the hydrogen chloride, greatly reduces the proportion of parasitic reaction in the growth of the gallium nitride single crystal, and improves the yield of the gallium nitride single crystal. And the utilization rate of gallium and the quality of the gallium nitride single crystal obtained by growth are obviously improved.

The invention relates to the technical field of gallium oxide crystal preparation, in particular to a gallium oxide crystal preparation process and device. The specific preparation process comprises the following steps: S1, pressing a mixed material into a material blank; s2, performing vacuum impregnation on the blank in a gallium chloride solution; s3, performing vacuum impregnation on the blank in a potassium chloride solution; s4, putting the material blank into a growth furnace, and heating the crucible; s5, controlling the interface growth temperature of the crystal, and growing a gallium oxide crystal; and S6, cooling the crystal obtained in the step S5 in three stages to obtain the gallium oxide crystal. The invention further discloses a preparation device of the gallium oxide crystal preparation process, the preparation device comprises the growth furnace, the growth furnace comprises a base, a bottom support is arranged above the base, a heat preservation base plate is arranged above the bottom support, and a zirconium oxide felt layer is arranged between the lower inner side heat preservation cylinder and the lower outer side heat preservation cylinder in a filling mode. The gallium oxide crystal prepared by the invention has relatively low dislocation density and lattice constant, and the preparation method is simple.

This invention relates to a method and application for molten salt electrolysis to recover GaN waste, belonging to the field of electrochemical metallurgy. It solves the problems of existing GaN recovery technologies that rely on pyrometallurgical or hydrometallurgical processes, resulting in huge energy consumption, severe secondary pollution, and difficulty in directly utilizing electrochemical energy to achieve efficient GaN decomposition and highly selective gallium recovery. The method includes: preparing GaN-containing waste into a specific type of anode electrode, placing it in a chloride molten salt electrolyte containing 10-50 wt% gallium chloride for electrolysis, allowing GaN to be directly electrochemically oxidized and decomposed into gallium ions and nitrogen gas at the anode. The gallium ions migrate to the cathode and are reduced to high-purity metallic gallium. This invention achieves direct electrochemical attack on stable GaN covalent bonds under low-temperature conditions, integrating the decomposition and purification processes into a single electrolysis step. It has the advantages of short process, low energy consumption, environmental friendliness, and applicability to various forms of GaN waste.

The invention provides a method for preparing gallium trichloride based on a hydrogen chloride gas method, and belongs to the field of gallium trichloride preparation. The method comprises the following steps: mixing metal inorganic salt with metal gallium to obtain a mixture; under the atmosphere of protective gas, hydrogen chloride gas is introduced into the mixture, heating is carried out, an oxidation-reduction reaction is carried out, and gallium trichloride gas is obtained; and cooling the gallium trichloride gas to obtain a gallium trichloride solid. The metal inorganic salt can be used as a reaction catalyst and directly participates in electron exchange on the surface of the metal gallium, the addition of the metal inorganic salt is equivalent to the construction of a micro electrode, the oxidation-reduction reaction can be enhanced, the electron transfer speed is obviously accelerated, and the reaction rate is further greatly improved. In practical application, after the metal inorganic salt is added, the preparation rate of the gallium trichloride is increased by 2-8 times compared with that of the gallium trichloride without the catalyst, and the purity of the finally obtained gallium trichloride can reach 3N-6N, so that the method for efficiently preparing the high-purity gallium trichloride is formed.

The utility model relates to the technical field of gallium nitride single crystal growth, in particular to a large-size gallium nitride single crystal HVPE growth reactor. The reactor comprises a furnace chamber and a furnace body; the furnace body comprises a furnace cover, a furnace barrel, a furnace chassis and a heater outside the furnace barrel; a furnace chamber is formed among the furnace cover, the furnace barrel and the furnace chassis; a gallium boat and a substrate support are sequentially arranged in the furnace chamber from top to bottom, the upper end of the gallium boat is connected with the furnace cover, the gallium boat is used for storing gallium and generating gallium chloride, and the substrate support is connected with the furnace chassis; a tail gas pipeline is connected outside the furnace chassis; and an ammonia gas inlet pipe is arranged on the furnace cover. An isolation gas pipe is arranged in the gallium boat, an upper cavity protection sleeve and a lower cavity protection sleeve are arranged on the inner wall of the furnace barrel, and protection gas is introduced between the upper cavity protection sleeve and the inner wall of the furnace barrel. Through the protection effect of gas purging outside the furnace chamber protection sleeve and the upper chamber protection sleeve, parasitic deposition of polycrystalline gallium nitride on the inner wall of the furnace chamber is avoided, and the service life of the gallium nitride single crystal HVPE growth reactor is prolonged.

The invention discloses a method for growing a gallium oxide film by utilizing Mist-CVD (Chemical Vapor Deposition), which obviously improves the deposition rate (2.7-3.1 mu m / h) through pulse atomization (with the frequency of 1.5-2.5 MHz and the particle size of 1-5 mu m), a low-power plasma module (10-50 W, 400-600 DEG C), a microfluidic nozzle (10-50 mu m) and a multi-path precursor system, and improves the deposition rate (2.7-3.1 mu m / h) by 2-3 times compared with the deposition rate (0.5-1 mu m / h) in the prior art. And meanwhile, the crystal quality (FWHM reduction) and the uniformity (the standard deviation is 4.8-5.5 nm) of the thin film are optimized. A double-precursor system (gallium chloride, gallium acetylacetonate or gallium citrate) and an atomic layer deposition transition layer (5-10 nm) are adopted, online spectrum feedback control is combined, the defect density and energy consumption are reduced, and the method is suitable for large-scale production. The method provides a high-quality gallium oxide thin film for a power device and an ultraviolet detector, and has high-efficiency and low-cost industrial application potential.

The invention provides a catalyst, a preparation method thereof and a method for preparing isobutene by using the catalyst. The catalyst comprises a modified carrier, and an active component, a stabilizer and a binder which are loaded on the modified carrier, the modified carrier is pseudo-boehmite modified by a modifier, and the modifier comprises any one or more of tert-butyl alcohol, pentaerythritol, L-lysine, L-proline, polyacrylamide and polyacrylic acid; the active component is selected from any one or more of gallium nitrate, gallium chloride, zinc nitrate, zinc sulfate, zinc chloride, sodium tetraborate and boric acid. According to the catalyst, through the stabilizer and the binder, especially under the action of the stabilizer, the service life of the catalyst is prolonged and the stability of the catalyst is improved under the condition that the activity of the catalyst is not changed, so that the problem of catalyst coking in the cracking process can be effectively inhibited. In addition, the catalyst does not need to be heated for many times in the period of prolonging the service life, and the condition for applying the catalyst to the cracking reaction of the methyl tert-butyl ether is relatively mild.

The application provides a preparation method of gallium nitride with adjustable interface energy storage active surface, gallium nitride and application. The preparation method comprises the following steps: S1, grinding and mixing melamine, a benzene solution of gallium trichloride and potassium nitrate to obtain a mixture A, wherein n (melamine) = n (gallium trichloride) + n (potassium nitrate), and n represents the amount of substance; S2, transferring the mixture A into a reaction furnace, heating the reaction furnace to 800-850 DEG C under gas protection, naturally cooling to room temperature after heat preservation for 4-7 h, and obtaining a solid B; and S3, washing and drying the solid B to obtain gallium nitride powder. According to the nitrate-mediated carbothermal reduction reaction, the gallium nitride with adjustable interface energy storage active surface is prepared by controlling the reaction time, the preparation method is simple and reliable, and the regulation effect on the interface energy storage active surface of the gallium nitride is remarkable.