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Preparation method of ionic liquid electrodeposition copper/indium/gallium/selenium CIGS thin-film materials

A technology of ionic liquid and copper indium gallium selenide, which is applied in the field of materials, achieves the effects of good process stability and repeatability, easy preparation and easy operation

Inactive Publication Date: 2013-10-09
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention provides a method for electrodepositing CIGS film using ionic liquid 1-butyl-3-methylimidazolium trifluoromethanesulfonate (BMI-OTF) as electrolyte, and solves the problem of using aqueous solution system as electrolyte to prepare CIGS Thin films have issues with film yield and performance reproducibility

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  • Preparation method of ionic liquid electrodeposition copper/indium/gallium/selenium CIGS thin-film materials
  • Preparation method of ionic liquid electrodeposition copper/indium/gallium/selenium CIGS thin-film materials
  • Preparation method of ionic liquid electrodeposition copper/indium/gallium/selenium CIGS thin-film materials

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specific Embodiment approach 1

[0016] Embodiment 1: The CIGS thin film of this embodiment is prepared by electrodeposition of ionic liquid, and the specific steps are as follows:

[0017] 1) Prepare the electroplating solution with the following ratio: ionic liquid 1-butyl-3-methylimidazolium trifluoromethanesulfonate (BMIm-OTF) 15~40ml, copper chloride 5~25mmol / L, indium chloride 10 ~40mmol / L, gallium chloride 2~7mmol / L, selenium chloride 15~55mmol / L.

[0018] 2) After adding the above raw materials into a closed electrolytic cell in an argon atmosphere glove box, stir at a constant temperature (30-80 °C) at a constant speed (100-250 r / min) for 2-24 h.

[0019] 3) Select the platinum sheet as the counter electrode and the platinum wire as the reference electrode, and conduct CIGS film electrodeposition on the substrate of the working electrode under the conditions of voltage of -1.4~-2.2V and temperature of 30~80℃ for 1~ 4h.

[0020] In this embodiment, the electroplating solution is prepared by the foll...

specific Embodiment approach 2

[0031] Specific embodiment two: the difference between this embodiment and specific embodiment one is: weigh 13.4~67.2mg copper chloride, 44.2~176.9mg indium chloride, 13.5~47.3mg gallium chloride and 66.2~242.8mg selenium chloride added to the electrolytic tank.

specific Embodiment approach 3

[0032] Specific embodiment three: This embodiment provides a method for preparing a CIGS thin film, and the specific steps are as follows:

[0033] 1. Measure 20ml of ionic liquid 1-butyl-3-methylimidazolium trifluoromethanesulfonate (BMIm-OTF), weigh 26.9mg copper chloride, 66.4mg indium chloride, 16.9mg gallium chloride and 88.3 mg of selenium chloride is placed in an electrolytic cell, stirred at a temperature of 40° C. for 2 hours to obtain a mixed liquid;

[0034] 2. Raise the temperature of the mixed liquid obtained in step 1 to 50°C, and connect the three-electrode system after constant temperature;

[0035]3. Electrodeposit the system obtained in step 2 for 2 hours under the condition of a voltage of -2.0V, and obtain a CIGS coating layer electrodeposited on the Ni sheet.

[0036] The stoichiometric ratio of the CIGS thin film coating obtained in the present embodiment is: Cu 1.00 In 0.83 Ga 0.23 Se 1.64 .

[0037] Copper chloride and indium chloride used in this...

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Abstract

The invention discloses a preparation method of ionic liquid electrodeposition copper / indium / gallium / selenium CIGS thin-film materials, belonging to the technical field of materials. The method comprises the following steps: 1. measuring ionic liquid BMIm-OTF (1-butyl-3-methylimidazolium trifluoromethanesulfonate), copper chloride, indium chloride, gallium chloride and selenium chloride, putting the ingredients into a sealed electrolytic bath, and uniformly stirring to obtain electroplate liquid; and 2. performing CIGS thin film electrodeposition on a base material of a working electrode by utilizing an electrodeposition method. The invention provides the method for manufacturing CIGS thin films with excellent appearance, and the method is low in cost, reproducible, and the CIGS thin-film materials are easy to prepare, excellent in comprehensive performance, stable in process, good in reproducibility and high in photoelectric conversion efficiency. The band gap width of the materials prepared by the preparation method disclosed by the invention can reach to 1.55 eV, and the charge carrier concentration and the hall coefficient are respectively 2.741*10<20>cm<-3> and 2.277*10<-2> cm<3> / C.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a preparation method of an ionic liquid electrodeposited alloy film material. Background technique [0002] CuIn x Ga 1-x Se 2 (CIGS) is Ⅰ-Ⅲ-Ⅵ of chalcopyrite structure 2 Compound semiconductor materials, this polycrystalline chalcopyrite material is widely used in thin-film photovoltaic systems. In order to improve the performance of CIGS thin film solar cells, research on high-quality CIGS light absorbing layer materials is the most critical task at present. The electrodeposition process can provide high-quality films with low cost input. It is a multi-element and high-efficiency deposition method. The temperature of the deposition process is relatively mild; the electrodeposition has a wide range of applications, and the thickness of the deposited coating, film composition and structure can be precisely controlled. Produce uniform thin films on complex, porous surfaces, a...

Claims

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Application Information

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IPC IPC(8): C25D9/04
Inventor 安茂忠姬姗姗连叶杨培霞张锦秋
Owner HARBIN INST OF TECH
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