Electro-deposition method for preparing three band gap Fe-doped with copper gallium sulfur solar cell materials

A solar cell and electrodeposition technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of impossible to exceed a single solar cell, high production cost, conversion efficiency constraints, etc., and achieve controllable film composition and crystallization. Good sex, broaden the absorption effect

Active Publication Date: 2015-07-22
XIANGTAN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

So far, solar cells have roughly experienced three generations of development. The first generation is crystalline silicon-based solar cells, whose photoelectric conversion efficiency has exceeded 25%, and the preparation technology is relatively mature. Commercial products occupy 90% of the entire solar cell market. However, its higher preparation cost and conversion efficiency close to the theoretical efficiency limit (the theoretical efficiency limit of crystalline silicon solar cells is about 29%) restrict its further development.
The second generation is silicon-based thin film, CIGS, CdTe, GaAs and other compound thin films, Thin-film solar cells such as organic thin films, although the preparation cost of this generation of solar cells is lower than that of the first generation of solar cells, and it is easy to realize the production of large-area cells, but the development of its conversion efficiency faces a bottleneck, and it is impossible to exceed the limit of a single solar cell The efficiency is 33.5%, while the Carnot upper limit of solar photoelectric conversion is 95%, which shows that the performance of solar cells still has a lot of room for development

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  • Electro-deposition method for preparing three band gap Fe-doped with copper gallium sulfur solar cell materials
  • Electro-deposition method for preparing three band gap Fe-doped with copper gallium sulfur solar cell materials
  • Electro-deposition method for preparing three band gap Fe-doped with copper gallium sulfur solar cell materials

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Embodiment 1

[0029] A method for preparing a triple-bandgap iron-doped copper-gallium-sulfur thin film material, comprising the following steps:

[0030] (1) Use acetone, ethanol and deionized water successively to ultrasonically clean the Mo conductive glass for 15 minutes, and then place the Mo conductive glass in a drying oven for 30 minutes under vacuum at 80°C.

[0031] (2) Take choline chloride and urea according to the molar ratio of 1:2, stir them evenly, and then dry them in a vacuum oven at 80°C for 12 hours to prepare 40ml of ionic liquid, and add 0.03mol / L and 0.1mol to the solution in turn Copper chloride, gallium chloride and ferric chloride of / L, 0.0005mol / L adopt single-cell electrolyzer, take the Mo glass substrate cleaned in step (1) as working electrode, and platinum wire is counter electrode, saturated Gan Mercury was used as a reference electrode, deposited at a constant potential of -1.2V for 30 minutes, the temperature of the electrodeposition solution was 60° C., a...

Embodiment 2

[0041] A method for preparing a triple-bandgap iron-doped copper-gallium-sulfur thin film material, comprising the following steps:

[0042] (1) Use acetone, ethanol and deionized water successively to ultrasonically clean the Mo conductive glass for 10 minutes, and then put the Mo conductive glass in a drying oven for 30 minutes at 80°C in vacuum.

[0043] (2) Take choline chloride and urea according to the molar ratio of 1:2, stir them evenly, and then dry them in a vacuum oven at 80°C for 8 hours to prepare 40ml of ionic liquid, and add 0.035mol / L and 0.1mol to the solution in turn Copper chloride, gallium chloride and ferric chloride of / L, 0.01mol / L, adopt single cell electrolyzer, with the Mo glass substrate that cleans in the step (1) as working electrode, platinum wire is counter electrode, saturated Gan Mercury was used as a reference electrode, deposited at a constant potential of -1.15V for 20 minutes, the temperature of the electrodeposition solution was 45°C, and ...

Embodiment 3

[0046] A method for preparing a triple-bandgap iron-doped copper-gallium-sulfur thin film material, comprising the following steps:

[0047] (1) Use acetone, ethanol and deionized water successively to ultrasonically clean the Mo conductive glass for 30 minutes, and then place the Mo conductive glass in a drying oven for 30 minutes at 80°C in vacuum.

[0048] (2) Take choline chloride and urea according to the molar ratio of 1:2, mix them evenly, and then dry them in a vacuum oven at 80°C for 14 hours to prepare 40ml of ionic liquid, and add 0.035mol / L and 0.1mol to the solution in turn Copper chloride, gallium chloride and ferric chloride of / L, 0.01mol / L, adopt single cell electrolyzer, with the Mo glass substrate that cleans in the step (1) as working electrode, platinum wire is counter electrode, saturated Gan Mercury was used as a reference electrode, deposited at a constant potential of -1.15V for 20 minutes, the temperature of the electrodeposition solution was 45°C, an...

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Abstract

The invention discloses an electro-deposition method for preparing the three band gap Fe-doped with copper gallium sulfur solar cell materials. The method includes the following steps: dissolving the copper chloride, the gallium chloride and the ferric chloride in the ionic liquid, depositing the Cu, Ga and Fe prefabricated layers on the constant potential of the substrate, conducting the vulcanization annealing treatment on the prefabricated layers, and finally preparing the Fe-doped with copper gallium sulfur thin film materials. The electro-deposition method for preparing the three band gap Fe-doped with copper gallium sulfur solar cell materials can effectively reduce the adverse effect of the hydrogen evolution reaction on the quality of the thin film due to the fact that the ionic liquid is used as the solvent, simple in preparation technology, high in utilization rate of raw materials, low in production cost, strong in controllability, good in repeatability, capable of realizing the preparation of the large-area high-quality thin film and large-scale production, good in crystallinity, compact and flat in surface topography, and capable of broadening the absorption of the solar energy spectral by the materials through the generated sub-band gap and obviously increasing the photo-generated current of materials.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and new energy sources, and relates to a preparation method of a multi-band gap solar cell absorbing layer material belonging to the third generation of solar cell materials, in particular to an electrodeposited triple-band gap iron-doped copper-gallium-sulfur solar energy Preparation method of battery material. Background technique [0002] With the development of society, the energy crisis and environmental pollution are becoming more and more serious. Developing clean and pollution-free new energy to replace traditional fossil energy will be the most effective way to solve these two problems related to human survival and development. Solar energy has become the focus of people's development in the field of new energy because of its cleanness, pollution-free and huge reserves. The development of solar energy is inseparable from the application of solar cells, which is a device ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/18C25D3/56C25D5/50
CPCC25D3/56C25D5/50H01L31/0322H01L31/0323H01L31/1876Y02E10/541Y02P70/50
Inventor 杨穗牛广海吕鑫鑫曹洲钟建新易捷
Owner XIANGTAN UNIV
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