31 results about "Gallium trichloride" patented technology

The invention discloses a preparation method of gallium trichloride, which comprises the following steps: firstly adding liquid metal gallium into a reactor, and then feeding chlorine gas into the liquid metal gallium; controlling the temperature of the reactor at 200-400 °C, after the first preset time period, the main product-gallium monochloride and the by-product-gallium trichloride are obtained; by adjusting the temperature of the reactor at 100-300 °C, the liquid state is obtained after the second preset time period Gallium trichloride and gaseous gallium trichloride; the obtained gaseous gallium trichloride is evaporated into the fractionating tube, and then the gaseous gallium trichloride becomes liquid gallium trichloride and flows into the storage device through cooling. A preparation method of gallium trichloride provided by the present invention can effectively solve the prior art problem of directly feeding chlorine gas into liquid metal gallium by setting two-stage reactions and setting different reaction temperatures in the two stages Carrying out the reaction creates technical problems with large quantities of gallium monochloride and chlorine gas impurities.

A system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The system includes sources of the reactants, one of which is a gaseous Group III precursor having one or more gaseous gallium precursors and another of which is a gaseous Group V component, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their monomer forms.

The invention relates to a process for purifying gallium trichloride; in the process, an end point of a reaction is determined by excess chlorine gas, and then the excess chlorine gas is consumed by adding metal gallium back to remove chlorine impurities; the process comprises the process steps: adding 500 g-3000 g of the metal gallium into a reaction kettle, at the reaction temperature of 180 DEG C, introducing chlorine gas, and carrying out a reaction; and when gallium trichloride is reacted to the end point, namely, a reaction solution is pale yellow green, stopping introduction of the chlorine gas, opening nitrogen gas purging, adding 1.0 g-2.0 g of metal gallium to the reaction kettle, and continuing to maintain 180 DEG C until the reaction solution turns from yellow green to colorless. In the process, the end point of the reaction is determined by excess chlorine gas, and then the excess chlorine gas is consumed by adding the metal gallium back to remove the chlorine impurities, so that the content of the chlorine gas impurities in the gallium trichloride is decreased to 1 ppm or less, and the product yield is high.