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High flow gaci3 delivery

A conveying pipeline, high-purity technology, applied in the field of conveying high-fluidity GaCl3, which can solve problems such as low flow rate

Inactive Publication Date: 2008-03-05
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Existing solid-state chemical vapor delivery systems only exist for low flow rates due to the low vapor pressure of most solid-state precursors

Method used

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Embodiment Construction

[0014] The apparatus and method of the present invention use high vapor pressure epitaxy (HVPE) in an epitaxial reactor by introducing high flow and high purity GaCl 3 Vapors are fed into the aforementioned reactors to enable chemical vapor deposition (CVD) for gallium film deposition.

[0015] Due to solid GaCl 3 The low vapor pressure, traditional gas phase delivery systems for solid precursors are not available for high flow and high purity GaCl 3 delivery.

[0016] Existing liquid-phase gas-phase delivery systems that can deliver such high flow rates are not suitable for molten (greater than 80°C) due to their low temperature capabilities, and the chemical nature of chlorine accelerated at higher temperatures - highly corrosive GaCl 3 .

[0017] The present invention is described as follows. GaCl 3 The solid precursor was placed in a 316LSS bubbler vessel where it was heated above its 78°C melting point. At this temperature and above, it is liquid and can be foamed ...

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Abstract

The present invention is an apparatus for deliverying high purity gallium trichloride in the vapor phase to a gallium nitride reactor, comprising; a source of carrier gas at an elevated pressure; a purifier to remove moisture from the carrier gas; a heater capable of heating the carrier gas to at least 80 DEG C.; a container having a supply of gallium trichloride, a valve controlled inlet for the carrier gas having a dip tube with an outlet below the level of the gallium trichloride, a valve controlled outlet for removing the carrier gas and entrained gallium trichloride; a heater capable of heating sufficient to melt the gallium trichloride; a delivery line connected to the valve controlled outlet for carrying the entrained gallium trichloride to a reaction zone for gallium nitride. A process is also described for the apparatus.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Patent Application Serial No. 60 / 812,560, filed June 9, 2006. Background of the invention [0003] The electronics manufacturing industry has a strong interest in compound semiconductors such as gallium-containing films. Previously, gallium-containing compounds have been synthesized using trimethylgallium. That synthesis is expensive and slow. [0004] One disadvantage of synthesizing gallium-containing compounds is that gallium sources such as gallium trichloride (GaCl 3 ) delivery system. due to GaCl 3 Low vapor pressure in its solid state, traditional vapor delivery systems for solid precursors cannot deliver GaCl 3 High flow and high purity delivery. [0005] Existing liquid vapor delivery systems that can deliver such high flow rates are not suitable for molten (greater than 80°C) GaCl due to their low temperature capabilities, and the highly corrosive natu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F17D1/04
CPCC30B29/42C23C16/4402C30B29/406C23C16/4482C30B25/14H01L21/00H01L21/02
Inventor T·A·斯泰德尔C·M·伯特彻R·D·克拉克L·A·塞尼卡尔
Owner AIR PROD & CHEM INC
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