50results about How to "Control film thickness" patented technology

The infrared reflective device includes infrared reflective members which reflect infrared rays. The infrared reflective members include colloidal particles arranged at regular spacing, and a filler material intervening in the spaces between the colloidal particles. The difference between the refractive index of the colloidal particles and the refractive index of the filler material is set so as to be 0.05 or less in the visible light region and 0.1 or above in the infrared region, whereby visible light is transmitted while infrared rays are reflected.

The invention discloses a preparation method of NiO porous membrane. According to the invention, first, an Ni substrate is pretreated; the pretreated Ni substrate is adopted as an anode, a Pt sheet is adopted as a cathode, a nitric acid solution is adopted as an electrolyte, and an anodic oxidation treatment is carried out for 5min to 30min with an applied voltage of 5V to 25V while the electrolyte is stirred; the Ni substrate processed from the anodic oxidation treatment is washed with deionized water, and is naturally dried in air, such that an Ni substrate with an amorphous NiO porous membrane is obtained; the Ni substrate with the amorphous NiO porous membrane is baked in a muffle furnace, such that an Ni-based crystalline cubic phase NiO porous membrane is obtained. According to the invention, no obvious boundary is between the NiO porous membrane and the substrate material which is the Ni substrate; and bonding strength between the two is high. NiO porous membranes produced withother methods have problems of deformation, efflorescence and peeling during long-term use. With the method provided by the invention, the problems are solved, and the cycling stability of the product is improved.

The invention relates to a waterborne polyurethane film and a preparation technology thereof. The preparation technology comprises the following steps: (1) mixing waterborne polyurethane emulsion, a thickener and a pH regulator to prepare a waterborne polyurethane painting, wherein the weight of the thickener accounts for 0.5%-3% of that of the waterborne polyurethane emulsion and the weight of the pH regulator accounts for 0.05%-0.5% of that of the waterborne polyurethane emulsion; (2) placing the waterborne polyurethane painting obtained in step (1) on a base material; (3) dragging the base material to cause the waterborne polyurethane painting to pass through a knife-edge gap, thereby ensuring the film thickness to be 10 mu m-20 mu m; and (4) carrying out drying and rolling on the waterborne polyurethane film obtained in step (3). In the process of the technology of the invention, organic solvent does not volatilize or a little amount of the organic solvent volatilizes and control equipment with complicated fusion, extrusion or calendar is in no need, thereby having the advantages of stability and reliability.

The invention belongs to the field of preparation of composite films and discloses a preparation method of an all-carbon composite film. The method comprises the following steps: firstly, taking graphite as a raw material, and controllably synthesizing graphene oxide by adopting an improved Hummers method; effectively dispersing carbon nanotubes in a water solution through graphene oxide containing abundant oxygen functional groups, so as to form a stable graphene oxide/carbon nanotube dispersion solution; then forming a film through a method for sequentially filtering a carbon nanotube dispersion solution and the graphene oxide/carbon nanotube dispersion solution in one step in vacuum; finally, carrying out heat treatment in a reduction atmosphere to obtain the all-carbon composite film.The invention further discloses a product obtained by the preparation method and application of the product. According to the preparation method provided by the invention, the controllability of preparation technology parameters is strong, the operation is simple and feasible and the structure of the obtained all-carbon composite film is complete; the binding force between a film base layer and astopping layer is strong; the all-carbon composite film has a very good separation effect on dyestuff and can be used for efficiently intercepting the dyestuff in water; the all-carbon composite filmhas a very good application prospect in the aspect of separating the dyestuff.

The present invention is metal organic chemical vapor deposition process of growing ZnO film in m plane or a plane, and features that in a low pressure metal organic chemical vapor deposition system, gamma-LiAlO2 monocrystal substrate of (100) plane or (302) plane is set on the bearing stage for ZnO film to grow on with diethyl zinc as the zinc source, high purity oxygen as the oxygen source and high purity argon as the saturated zinc vapor carrier and diluting gas. The ZnO film growing conditions include diethyl zinc bubbler pressure of 760 torr, zinc source flow rate of 15-25 sccm, O2 flow rate of 100-150 sccm, Ar flow rate of 80-120 sccm, O/Zn molar ratio of 80-200, vacuum chamber pressure of 80-120 Pa, growth temperature of 400-750 deg.c and growth time of 20-60 min. The present invention can grow high quality non-polar ZnO film and possesses excellent industrial application value.

The present invention relates to a hydrophobicity conductive tool coated with a chromium carbide base metal ceramic electroplated layer and a method for manufacturing same. The hydrophobicity conductive tool is characterized in that the chromium carbide base metal ceramic electroplated layer is electroplated on teh surface of the tool, has an electrical conductivity that the specific resistance is less than 100 Ohms, a hydrophobicity that the water contact angle is greater than 94 degrees and a performance that a linear polarization corrosion current is less than 1*10-5 amperes, can be applied to the tool of high precision and rigidity, wear resistance, hydrophobicity and good electrical conductivity, such as medical scalpel, battery polar plate, joint, pin, etc. The present invention also provides a trivalent chromium electroplating method for manufacturing the hydrophobicity conductive tool.

Disclosed is a method of producing an electronic component mounting structure, provided with a mounting step of mounting an electronic component on a circuit board by soldering terminals connected to the electronic component to electrodes formed on a circuit board surface, a coating step of coating a liquid state curable resin composition so as to cover the soldered section on the surface of the circuit board surface formed by soldering, said liquid state curable resin composition including a curable resin and a foaming agent, a curing step of forming a cured resin by curing the liquid state curable resin composition at a temperature lower than the temperature at which the foaming agent foams, and a foaming step which causes a foaming agent to foam by heating at least a portion of the cured resin.

The invention provides film transfer equipment, a transfer plate assembly and a transfer equipment adsorption force control device. The film transfer equipment comprises a transfer plate used for transferring a film layer to a base plate for the film layer to be transferred, and a base station used for bearing the base plate. The film transfer equipment further comprises an adsorption force control unit, wherein the adsorption force control unit acts on at least one of the base plate and/or the transfer plate in the transferring process so as to increase the difference between first adsorption force of the base plate to film forming matter transferred out from the transfer plate and second adsorption force generated by the transfer plate to the film forming matter. The film transfer equipment, the transfer plate assembly and the transfer equipment adsorption force control device can reduce residue and particle phenomena in the transferring and film forming processes through a simple and low-cost method.

The invention discloses a laser diode (LD) packaging module and a LD packaging method. An LD chip is packaged on a heat sink, nano-silver paste is adopted as a connecting material for the heat sink and the LD chip, and the heat sink is connected with the LD chip through a bonded gold wire to form a negative electrode. In a packaging process, a silk screen printing mold is simulated by an adhesive tape, so that the coating area and thickness of the nano-silver paste are controlled by controlling the arrangement range and thickness of the adhesive tape. The LD chip is connected by a low-temperature sintering technology, and the nano-silver paste is adopted as the connecting material for the LD chip, so that a film can be conveniently plated by a silk screen printing method, film plating time can be effectively saved, and the thickness of the film can be controlled. The connecting material for the LD chip is pure silver, so that the LD packaging module has low thermal resistance, a high integration degree and high photoelectric conversion efficiency, and is energy-saving and environment-friendly.

The invention discloses a lithium-rich manganese-based positive electrode material, and a preparation method and a use thereof. The lithium-rich manganese-based positive electrode material is a flexible lithium-rich manganese-based positive electrode material, and does not contain other inert components, so the energy density is obviously improved. The preparation method of the lithium-rich manganese-based positive electrode material comprises the following steps: mixing a lithium source with a manganese-based material, carrying out stripping and centrifuging treatment to obtain a lithium-richmanganese-based positive electrode material suspension, coating a substrate with the suspension, and carrying out vacuum drying to obtain the lithium-rich manganese-based positive electrode material.The lithium-rich manganese-based positive electrode material regulates the thickness and the flexibility of the product film by controlling the coated weight and vacuum drying conditions.

Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN thick film with a fine property; and a GaN single crystal growing apparatus. Provided is a manufacturing method of a GaN single crystal by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaCl (gallium chloride); and forming a GaN thin film by a reaction of the generated GaCl (gallium chloride) with NH 3 (ammonia) gas which is hydroxide gas on a substrate, the manufacturing method comprising supplying the NH 3 gas in a vicinity of the substrate (for example, at a position which is separated from the substrate by a distance of 0.7-4.0 times as longer than a diameter of the substrate) through a nozzle. Further, as the substrate, an NGO(011) substrate in which the lattice constant thereof is similar to that of GaN is used.

The invention provides chemical vapor deposition equipment, and belongs to the technical field of semiconductors. The chemical vapor deposition equipment comprises a reaction cavity, a gas supply assembly, gas distribution discs and gas control assemblies. The reaction cavity is provided with a plurality of bearing tables used for bearing wafers. The gas supply assembly is used for providing reaction gas. The plurality of gas distribution discs are arranged in one-to-one correspondence with the plurality of bearing tables. The plurality of gas control assemblies are arranged in one-to-one correspondence with the plurality of gas distribution discs. The gas distribution discs and the gas supply assembly are connected through the corresponding gas control assemblies. In this way, the flow or ventilation time of the reaction gas can be adjusted through the gas control assemblies so as to control the gas flow or ventilation time of the corresponding gas distribution discs, the difference of the film thickness of films deposited on the surfaces of different wafers is reduced, the quality of the films deposited on the wafers can be improved, and then the cost is reduced.

The invention belongs to the technical field of a fuel cell and particularly relates to a method for preparing an anhydrous proton exchange film based on sulfonated graphene oxide by utilizing the spin-coating technology. The method comprises steps of preparing polyvinyl chloride (PVC) solution, preparing graphene oxide (SGO) solution, uniformly coating the PVC solution on a surface of a glass plate by using a spin coater, dropwise adding the SGO solution, repeating a spin coating step for 5 times, and drying to prepare the PVC/SGO 5 composite film. And soaking in PA (Polyamide) with the massfraction of 85% for 24-48 hours to prepare the PVC/SGO (Polyvinyl Chloride/Styrene Glycol)5/PA composite film. The method is advantaged in that the non-aqueous proton exchange film having high mechanical property, good proton conductivity and the like is prepared by utilizing the spin-coating technology based on excellent conductivity of the SGO and controllable thickness of a film material prepared by the spin-coating technology and the like, and the method has the good application prospect.

The invention provides a method for controlling the thickness of an adhesive film. The method comprises the step of using an adhesive film thickness control device and comprises the following steps that firstly, a proper thickness difference mold plate is selected; then, adhesive, an upper connecting plate and a lower connecting plate are arranged on the adhesive film thickness control device; and polytetrafluoroethylene cloth, an isolating film and breathable felt are sequentially laid on the surfaces of the adhesive film thickness control device and the connected upper connecting plate and lower connecting plate, the whole adhesive film thickness control device, the connected upper connecting plate and lower connecting plate are wrapped and then put into a vacuum bag, the adhesive film thickness control device, the connected upper connecting plate and lower connecting plate and the vacuum bag are put into an autoclave together, then, adhesive bonding curing forming of the upper connecting plate and the lower connecting plate is completed in the autoclave, and an adhesive bonding piece is taken out so that the thickness of the adhesive film used for connection between the upper connecting plate and the lower connecting plate can be the target thickness of the adhesive film. According to the method, the thickness of the adhesive film in the adhesive bonding process of a composite material can be well controlled, and therefore the adhesive bonding strength of a connecting joint of the composite material is effectively controlled, and the problem that adhesive bonding unevenness is prone to happening in the adhesive bonding connecting process of the composite material is effectively solved.

The invention discloses a gumming procedure of steel plate film-covering technology. The gumming procedure of the steel plate film-covering technology comprises the steps of glue mixing, glue injecting and gumming. The surface of coating roller is wiped up by non-woven fabric dipping thinning agent before gumming to enable the surface of the coating roller to be smooth, no glue and impurity residual exist, the problem of non uniform gumming caused by the residual of the surface of the coating roller is avoided, a gap between a belt rubber roller and a glue roller is adjusted, the film thickness of the glue roller is well controlled, the film thickness on the two sides must be uniform, the roller speed ratio is well adjusted, and uniform gumming is guaranteed.

The invention discloses a film thickness control device and a rapid film plating method thereof, and relates to the technical field of lens film plating, in particular to a film thickness control device and a rapid film plating method thereof.The film thickness control device comprises a film plating machine shell, a driving motor is fixed to the upper surface of the film plating machine shell, and the output end of the driving motor is connected with a rotary disc; a rotary disc is arranged in the coating machine shell, a detection head is arranged in the rotary disc, a mounting plate is mounted in the coating machine shell, a material box is arranged at the front end of the mounting plate, baffles are arranged at the front end of the mounting plate and close to the two ends of the material box, and a fixing plate is arranged at the rear end of the mounting plate. According to the film thickness control device and the rapid film coating method thereof, the adjusting motor is arranged, the driving gear can be driven to rotate to be meshed with the toothed bar to move, the flow limiting cover is driven to move, the flow limiting cover moves to the position above the material box, evaporated gas is blocked, film coating on the lens is stopped, and the film thickness can be well controlled.