A method for preparing fto conductive glass by near space sublimation technology

Abstract

The invention provides a method for preparing FTO conductive glass by using near space sublimation technology, and relates to the technical field of FTO conductive glass preparation, comprising: mixing CH3OH, HO(CH2)2NH2 and NH3·H2O according to a first ratio to obtain a first solution; Adding SnCl4·5H2O to the first solution and stirring continuously to obtain a second solution; the SnCl4·5H2O and the HO(CH2)2NH2 have a second ratio; doping the second solution with a fluorine source to prepare An FTO thin film precursor is obtained; the FTO thin film precursor is subjected to near-space sublimation deposition to prepare an FTO conductive glass. The invention has simple process and low cost, can use FTO precursor to control the composition of the FTO film layer, and is prepared in combination with the mature industrialized CSS process, and can obtain the FTO conductive glass with specific structure, morphology and photoelectric performance.

Description

technical field [0001] The invention relates to the technical field of preparation of FTO conductive glass, in particular to a method for preparing FTO conductive glass by using a near-space sublimation technology. Background technique [0002] FTO conductive glass is SnO2 transparent conductive glass doped with fluorine. FTO glass has been developed and utilized as a substitute for ITO conductive glass, and can be widely used in liquid crystal displays, photocatalysis, thin film solar cell substrates, dye-sensitized solar cells, Electrochromic glass and other fields. The FTO film of FTO conductive glass not only has good electrical properties and high free electron concentration, but also has strong transmittance in the visible region and high reflectivity in the far-infrared region. conductive film. The difference between the FTO film and the metal is that the cut-off wavelength of the transmitted light and the reflected light are different, that is, the cut-off waveleng...

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Problems solved by technology

The sol-gel method has a long preparation cycle, poor film compactness, easy shrinkage and cracking, and is not easy to repeat; most raw materials in the chemical vapor deposition method are toxic and corrosive, and it is difficult to prepare stoichiometric thin films; the equipment required for magnetron sputtering is complex , the target material is expensive, and the square resistance of the FTO film is prone to unevenness; the disadvantages of the spray pyrolysis method are that the quality of the prepared film is not high, the film thickness is large, and the performance is unstable

[0004] There are still the following problems in the field of FTO thin films in my country: first, the production cost is high and equipment investment is large; second, the production process is cumbersome and needs to be further improved; third, the low-radiation performance and electrical conductivity of FTO thin films are not ideal and need to be further optimized; It is due to the insufficient development of domestic large-scale production, and the main coating equipment basically relies on imports, so it is necessary to develop technologies and products with independent intellectual property rights

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