Semiconductor device and method for manufacturing same

Abstract

The method for fabricating a semiconductor device comprises the step of forming an Ni film 66 on a source / drain diffused layers 64 , the first thermal processing step of reacting a part of the Ni film 66 on the lower side and a part of the source / drain diffused layers 64 on the upper side with each other by thermal processing to form Ni2Si films 70 b on the source / drain diffused layers 64 , and the step of etching off the part of the Ni film 66 , which has not reacted, and the second thermal processing of reacting by thermal processing the Ni2Si films 70 b and parts of the source / drain diffused layers 64 on the upper side with each other.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device in which nickel is used for silicidation and a manufacturing method thereof. Background technique [0002] The so-called silicide (salicide) process is known as a technique to make the gate and source / drain diffusion layers less resistive, which is used in the gate and source / drain A metal silicide film is self-aligned on the surface of the diffusion layer. As a metal material that reacts with silicon in the silicide process, cobalt (Co) is widely used (see, for example, Japanese Published Unexamined Patent Application No. Hei 09-251967 (1997)). [0003] On the other hand, miniaturization of semiconductor device structures is rapidly progressing. Specifically, the junction depth of the source / drain diffusion layer has been reduced to below 80nm (excluding 80nm). The film thickness of the metal silicide film form...

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Problems solved by technology

[0006] However, when the Ni film is simply used for silicide formation, the roughness of the interface between the silicon layer and the silicide film is so large that the sheet resistance dispersion of the source / drain diffusion layer increases, and the junction-drain The current is often increased

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