Chemical vapor deposition equipment

Abstract

The invention provides chemical vapor deposition equipment, and belongs to the technical field of semiconductors. The chemical vapor deposition equipment comprises a reaction cavity, a gas supply assembly, gas distribution discs and gas control assemblies. The reaction cavity is provided with a plurality of bearing tables used for bearing wafers. The gas supply assembly is used for providing reaction gas. The plurality of gas distribution discs are arranged in one-to-one correspondence with the plurality of bearing tables. The plurality of gas control assemblies are arranged in one-to-one correspondence with the plurality of gas distribution discs. The gas distribution discs and the gas supply assembly are connected through the corresponding gas control assemblies. In this way, the flow or ventilation time of the reaction gas can be adjusted through the gas control assemblies so as to control the gas flow or ventilation time of the corresponding gas distribution discs, the difference of the film thickness of films deposited on the surfaces of different wafers is reduced, the quality of the films deposited on the wafers can be improved, and then the cost is reduced.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a chemical vapor deposition equipment. Background technique [0002] The chemical vapor deposition process is the most widely used technology for depositing insulating films in the process flow of dynamic random access memory devices. With the requirements for productivity and process precision, in order to minimize the film thickness difference between each wafer. Generally, by measuring and counting the film thickness data, if it is found that there is a large difference between the film thicknesses, it is necessary to adjust the energy during the deposition process, the length of the deposition energy, the flow rate of the reaction gas, the deposition mode, etc. to reduce the deposition rate. The difference in film thickness between films. The chemical vapor deposition process is generally completed by chemical vapor deposition equipment, and four-chamber che...

AI Technical Summary

Problems solved by technology

However, during the chemical vapor deposition process, the gas flow rates of the four gas distribution plates are different, so it is difficult to accurately control the gas flow rate of each gas distribution plate, and it is easy to cause a large difference in film thickness between wafers.

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