The invention relates to a preparation method for a temperature compensation attenuator, and the method comprises the following steps: employing a thin film technology to deposit a PTC thermistor on asubstrate, carrying out the patterning of the PTC thermistor, and keeping a part needed by design; depositing an NTC thermistor on the substrate through employing the thin film technology, carrying out the patterning of the NTC thermistor, and keeping a part needed by design; carrying out the heat treatment of the patterned PTC thermistor and the patterned NTC thermistor independently or simultaneously; depositing a metal electrode on the substrate through employing the thin film technology, carrying out the patterning of the metal electrode, and obtaining the temperature compensation attenuator. The method employs the thin film technology, and is higher in precision and controllability. The prepared temperature compensation attenuator is lower in noise, is more excellent in radio frequency performance and performance consistency and repeatability. Meanwhile, the method facilitates the miniaturization, thinning and integration, and is higher in sensitivity to temperature changes.