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Preparation method for temperature compensation attenuator

A technology of temperature compensation and attenuator, applied in waveguide devices, electrical components, circuits, etc., can solve the problem of process and performance controllability, low repeatability and consistency, and insufficient precision of thickness and graphic line width/line distance , Parasitic capacitive reactance affects the high-frequency performance of the device, etc., to achieve the effect of shortening the response time constant, excellent consistency and repeatability, and facilitating miniaturization

Active Publication Date: 2018-02-16
GUANGDONG FENGHUA ADVANCED TECH HLDG
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, the thick film process has the following problems: the controllability, repeatability and consistency of the process and performance are low, the main reason is that the accuracy of thickness and graphic line width / line spacing is not high enough; The glass phase generally contains lead, which is not friendly to the environment; at the same time, the addition of the glass phase significantly improves the resistivity of the material, and it is easy to introduce obvious parasitic capacitance to affect the high-frequency performance of the device

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  • Preparation method for temperature compensation attenuator
  • Preparation method for temperature compensation attenuator
  • Preparation method for temperature compensation attenuator

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preparation example Construction

[0045] In order to overcome the limitations of the existing thick-film process for preparing temperature-compensated attenuators and improve the performance of temperature-compensated attenuators, the present invention provides a method for preparing temperature-compensated attenuators, which includes the following steps:

[0046] (1a) Depositing PTC thermistors on the substrate by thin film technology, patterning the PTC thermistors, retaining the required parts of the design, and performing heat treatment on the PTC thermistors;

[0047] (2a) Depositing NTC thermistors on the substrate by thin film technology, patterning the NTC thermistors, retaining the required parts of the design, and performing heat treatment on the NTC thermistors;

[0048] (3a) Depositing metal electrodes on the substrate by a thin film process, and patterning the metal electrodes to obtain a temperature compensation attenuator; or

[0049] (1b) Deposit PTC thermistors on the substrate by thin film te...

Embodiment 1

[0073] An embodiment of the preparation method of the temperature compensation attenuator of the present invention, the preparation process of the temperature compensation attenuator described in this embodiment is as follows figure 1 As shown, the specific method is as follows:

[0074] (1) First, pre-treat the substrate: according to the requirements of power, frequency and device size, alumina, aluminum nitride, and beryllium oxide ceramics can be selected. For general applications, 99.6% alumina ceramic substrates are the first choice; sequentially use Ultrasonic cleaning of the substrate with acetone, absolute ethanol, and deionized water for 5 minutes each, and drying with nitrogen for later use; for occasions with higher requirements, a step of plasma cleaning can be added to improve the cleanliness of the substrate surface;

[0075] (2) The PTC thermistor is deposited on the substrate by thin film technology, the PTC thermistor is patterned, the required part of the d...

Embodiment 2

[0082] An embodiment of the preparation method of the temperature compensation attenuator of the present invention, the preparation method of the temperature compensation attenuator described in this embodiment is to combine the heat treatment of the PTC thermistor and the NTC thermistor in embodiment 1 to simplify the process, Reduce costs while avoiding the impact of secondary heat treatment on thermistor performance. The preparation process of the temperature compensation attenuator described in this embodiment is as follows figure 2 As shown, the specific method is as follows:

[0083] (1) First, pre-treat the substrate: according to the requirements of power, frequency and device size, alumina, aluminum nitride, and beryllium oxide ceramics can be selected. For general applications, 99.6% alumina ceramic substrates are the first choice; sequentially use Ultrasonic cleaning of the substrate with acetone, absolute ethanol, and deionized water for 5 minutes each, and dryin...

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Abstract

The invention relates to a preparation method for a temperature compensation attenuator, and the method comprises the following steps: employing a thin film technology to deposit a PTC thermistor on asubstrate, carrying out the patterning of the PTC thermistor, and keeping a part needed by design; depositing an NTC thermistor on the substrate through employing the thin film technology, carrying out the patterning of the NTC thermistor, and keeping a part needed by design; carrying out the heat treatment of the patterned PTC thermistor and the patterned NTC thermistor independently or simultaneously; depositing a metal electrode on the substrate through employing the thin film technology, carrying out the patterning of the metal electrode, and obtaining the temperature compensation attenuator. The method employs the thin film technology, and is higher in precision and controllability. The prepared temperature compensation attenuator is lower in noise, is more excellent in radio frequency performance and performance consistency and repeatability. Meanwhile, the method facilitates the miniaturization, thinning and integration, and is higher in sensitivity to temperature changes.

Description

technical field [0001] The invention relates to a preparation method of a temperature compensation attenuator, in particular to a preparation method of a film temperature compensation attenuator. Background technique [0002] A temperature compensated attenuator (or "temperature variable attenuator") is a class of device used to stabilize the gain of an RF / microwave amplifier as it changes with temperature. The gain of GaAs field effect transistors (FETs) and high electron mobility transistors (HEMTs) varies significantly with temperature. Therefore, for many applications, in order to avoid the system abnormality caused by it, it is necessary to effectively compensate the temperature drift. Methods of temperature compensation can be divided into three categories, including automatic level control (ALC) / automatic gain control (AGC), offset compensation, and the use of temperature compensation attenuators. Among them, the ALC / AGC circuit structure is relatively complex, the ...

Claims

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Application Information

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IPC IPC(8): H01P11/00H01P1/22H01P1/30
CPCH01P1/22H01P1/30H01P11/00
Inventor 廖进福沓世我付振晓杨曌罗俊尧李保昌
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
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