The invention relates to a composition for forming a
wafer edge protection film, a method for forming a
wafer edge protection film, and a method for forming a pattern. The present invention addresses the problem of providing a composition for forming a
wafer edge protection film, said composition being capable of providing a wafer edge protection film that can exhibit excellent
dry etching resistance and that can exhibit excellent uniform
coating properties even on a wafer edge that is difficult to coat. The solution of this problem is to provide a composition for forming a wafer edge protective film, which is used for forming a wafer edge protective film at the
peripheral edge of a substrate, and which is characterized by containing a
polymer (A) represented by general formula (1) and a
solvent. In the formula, W is-SO2-,-C (= O)-or-O-, R1, R2, R3, R4 and R5 are each independently a
halogen atom, a monovalent
organic group having 1-3 carbon atoms, or a hydroxyl group, and a, b, c, d and e are each independently an integer of 0-4.