Temperature compensation attenuator

A technology of temperature compensation and attenuator, which is applied in waveguide devices, electrical components, circuits, etc., can solve the problem of unfriendly environment, parasitic capacitive reactance affecting high-frequency performance of devices, process and performance controllability, repeatability and consistency Low-level problems, to achieve the effect of thin film and serialization

Active Publication Date: 2018-04-20
GUANGDONG FENGHUA ADVANCED TECH HLDG
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, the thick film process has the following problems: the controllability, repeatability and consistency of the process and performance are low, the main reason is that the accuracy of thickness and graphic line width / line spacing is not high enough; The glass phase generally contains lead, which is not friendly to the environment; at the same time, the addition of the glass phase significantly improves the resistivity of the material, and it is easy to introduce obvious parasitic capacitance to affect the high-frequency performance of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Temperature compensation attenuator
  • Temperature compensation attenuator
  • Temperature compensation attenuator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] like figure 2 As shown, a temperature compensation attenuator according to an embodiment of the present invention includes a substrate 1 on which a first thermistor 2, a second thermistor 3, a signal electrode 4 and a ground electrode 5 are arranged. A thermistor 2 is a thin film PTC thermistor; as image 3 As shown, the second thermistor 3 is formed by stacking a conductive layer 31 and a thin film NTC thermistor 32, and the conductive layer 31 is arranged between the substrate 1 and the thin film NTC thermistor 32; figure 2 , image 3 and Figure 4 As shown, the signal electrode 4 is electrically connected to the first thermistor 2 and the thin film NTC thermistor 32 respectively, and the ground electrode 5 is electrically connected to the first thermistor 2 or the thin film NTC thermistor 32 .

[0038] In the above structure, the thin film NTC thermistor R in the two thickness directions 2 , R 3 and the resistance of the conductive layer R 4 form a series str...

Embodiment 2

[0048] A temperature-compensated attenuator in the embodiment of the present invention differs from the temperature-compensated attenuator in Embodiment 1 only in that in this embodiment, the material of the conductive layer 31 is an oxide, and the resistivity of the conductive layer 31 is related to the NTC heat of the thin film. The ratio of the resistivity of the sensitive resistor 32 is 3×10 -5 ~7×10 -4 between. The oxide can be a binary oxide conductive material and some composite oxide conductive materials with a perovskite structure, and the oxide must have high temperature resistance. At this time, the resistance of the conductive layer is large and the TCR is small, the resistance of the thin film NTC thermistor is small and the value of B is large, and the conductive layer and the thin film NTC thermistor form a series structure, so as to realize the total resistance R and equal Thin film NTC thermistor with small effective B value. Figure 13 It is a typical resi...

Embodiment 3

[0051] A temperature compensation attenuator according to an embodiment of the present invention differs from the temperature compensation attenuator in Embodiment 1 only in that in this embodiment, the second thermistor consists of two layers of conductive layers and two layers of thin film NTC thermistors alternately stacked, and the bottom conductive layer is arranged between the substrate and the bottom thin film NTC thermistor.

[0052] In this embodiment, the thicknesses of the conductive layer and the thin-film NTC thermistor in Embodiment 1 are halved, and the number of layers is doubled for alternate deposition to form a four-layer stacked structure, while other structural dimensions remain unchanged. The resistance temperature characteristics of the total resistance of the four-layer stacked NTC thermistor are as follows Image 6 shown. Compared Figure 13 and Image 6 It can be seen that the total resistance value of the four-layer stacked structure can be reduce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a temperature compensation attenuator. The temperature compensation attenuator comprises a substrate, wherein a first thermistor, a second thermistor, a signal electrode and aground electrode are arranged on the substrate, the first thermistor is a thin film positive temperature coefficient (PTC) thermistor, the second thermistor is formed by alternatively laminating at least one conductive layer and at least one thin film negative temperature coefficient (NTC) thermistor, the conductive layer at the bottommost layer is arranged between the substrate and the thin filmNTC thermistor at the bottommost layer, the signal electrode is electrically connected with the first thermistor and the thin film NTC thermistor, and the ground electrode is electrically connected with the first thermistor or the thin film NTC thermistor. The at least one conductive layer and the at least one layer of thin film NTC thermistor are alternatively laminated to form the second thermistor, thus, the whole resistance and the resistance temperature coefficient can be flexibly adjusted within a relatively large range, and thinness and serialization of the temperature compensation attenuator are achieved.

Description

technical field [0001] The invention relates to an attenuator, in particular to a temperature compensation attenuator. Background technique [0002] A temperature compensated attenuator (or "temperature variable attenuator") is a class of device used to stabilize the gain of an RF / microwave amplifier as it changes with temperature. The gain of GaAs field effect transistors (FETs) and high electron mobility transistors (HEMTs) varies significantly with temperature. Therefore, for many applications, in order to avoid the system abnormality caused by it, it is necessary to effectively compensate the temperature drift. Methods of temperature compensation can be divided into three categories, including automatic level control (ALC) / automatic gain control (AGC), offset compensation, and the use of temperature compensation attenuators. Among them, the ALC / AGC circuit structure is relatively complex, the cost of design and implementation is high, and the response speed is slow, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/30H01P1/22
CPCH01P1/22H01P1/30
Inventor 廖进福沓世我付振晓杨曌罗俊尧李保昌
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products