8 results about "Total resistance" patented technology

This application discloses a layout structure, chip, and electronic device for a resistor string, belonging to the field of circuit technology. In the chip including the resistor string, multiple resistors are arranged in an N-row, M-column array; the multiple resistors are connected in series along two diagonals parallel to the N-row, M-column array, where N and M are both positive integers. This allows process offsets generated along different directions, such as rows or columns, to cancel each other out, thereby minimizing the total resistance value offset of the resistor string caused by process offsets and improving the performance of the resistor device.

This invention relates to a method for analyzing the resistance components of a waterjet-propelled ship model. First, a resistance test is conducted on the bare hull. Next, a self-propelled test is performed to determine the rotational speed of the waterjet propulsion device at a given self-propelled point. Then, an L-shaped nozzle is installed, and the waterjet propulsion device operates at the self-propelled point rotational speed at a specific speed, measuring the total hull resistance. Simultaneously, the flow field in the flow region is measured using PIV technology, and the inlet longitudinal momentum is calculated. Finally, the total resistance is subtracted from the bare hull resistance and the inlet longitudinal momentum to obtain the impact of the propeller operation on the hull resistance at the corresponding self-propelled point. This invention employs conventional resistance tests, L-shaped nozzle resistance tests, self-propelled tests, and flow field measurements in the flow region to decompose the resistance into the hull's own resistance components and the hull resistance increment caused by the suction effect of the waterjet propulsion device. This allows for the identification of the propeller's impact on the hull, reducing hull shape optimization to a single objective function optimization problem and improving hull shape optimization efficiency.

Device (106) for controlling the voltage-dependent resistance, comprising: at least two electrodes (202, 204) at closely spaced endpoints; a first layer (210) applied to the at least two electrodes (202, 204), wherein the first layer consists of a metal oxide; a second layer (208) applied to the first layer (210), wherein the second layer (208) consists of an electrically conductive metal oxide; a forming contact (206) applied to the second layer (208), wherein a combination of the forming contact (206), the first layer (210) and the second layer (208) functionally connects the at least two electrodes (202, 204) to each other; and a computer system functionally connected to the educational contact, wherein the computer system (102) is designed to apply a predetermined voltage to the first layer (210) and to the second layer (208) respectively, and to display an increase in the total resistance using a user interface.

This invention relates to a method for generating a chart indicating the driving resistance of a vehicle under arbitrary load, comprising the following steps: S1: Derivation of the formula for the total resistance of the vehicle; S2: Determining whether the vehicle under test has undergone a secondary coasting test. If no secondary coasting test is performed, proceed to step S3.1; otherwise, proceed to step S4.1; S3.1: Assuming the vehicle under test is fully loaded, generating the theoretical resistance and speed during coasting. F - V Curve graph; S3.2: Derive the theoretical resistance calculation formula within different speed ranges; S3.3: Calculate the absolute value of the error after forming the curve error of the theoretical resistance; S3.4: Generate the error guidance table under different deviations: Table 1; S3.5: Conduct actual coasting tests. This invention has higher calculation accuracy and makes up for the limitations of low efficiency and flexibility in measuring driving resistance by coasting tests.

ELECTRONIC DEVICE AND ELECTRONIC MODULE The invention relates to an electronic device comprising: a component having a resistance (R120) with a negative temperature coefficient, and a temperature control means having an electrical resistance (R130) varying according to the temperature T such that the sum of the total resistance (R) is, over a second temperature sub-range (302), greater than a setpoint temperature (305), strictly greater than the total resistance (R) at the setpoint temperature (305). Figure for the abstract: Fig 3.

The present disclosure provides methods and a non-transitory computer readable media for resistance and capacitance (RC) extraction. The method comprises: receiving an electronic layout; selecting a two-dimensional (2D) conductive element from the electronic layout, wherein an aspect ratio of the 2D conductive element is lower than a predetermined threshold; partitioning the 2D conductive element into a plurality of polygons; determining a parasitic capacitance value for each polygon; determining multiple parasitic resistance values for each polygon; determining a total capacitance value of the 2D conductive element based on the parasitic capacitance value for each polygon; and determining a total resistance value of the 2D conductive element based on the multiple parasitic resistance values for each polygon.

A kind of band gap measurement method and device, to be measured semiconductor sample is fixed with temperature sensor thermal coupling, resistance measurement probe is connected to general measurement interface, identify probe type and load matching measurement protocol and correction algorithm, apply constant current excitation, establish constant current voltage, temperature acquisition link, real-time acquisition voltage and conversion resistance, temperature data are synchronously collected, calculate temperature change rate and resistance fluctuation variance, determine measurement scene state and switch sampling period, adjust heating link to realize temperature closed-loop control, complete full-temperature zone scanning adaptation.In target temperature interval, at least two groups of different effective length total resistance are measured to obtain intrinsic resistance, obtain temperature intrinsic resistance value pair, slice is carried out to the synchronous acquisition of multiple physical quantity parameters, environmental error correction is carried out, linear relationship is constructed based on the corrected data, band gap is calculated based on the slope and output measurement report, which provides an efficient and reliable technical solution for the accurate measurement of semiconductor material band gap.