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Resistor conversion type memory and producing method thereof

A technology of resistance conversion and memory, which is applied in the field of information storage, can solve the problems of high working current and high power consumption of resistance conversion memory, and achieve the effects of simple manufacturing process, low production cost and reduced working current

Inactive Publication Date: 2009-05-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0009] However, the operating current of the resistance transition memory is still too high, and its power consumption is still high, these are problems that need to be solved

Method used

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  • Resistor conversion type memory and producing method thereof
  • Resistor conversion type memory and producing method thereof
  • Resistor conversion type memory and producing method thereof

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. The drawings and their descriptions provided herein are only for illustrating embodiments of the present invention and are not intended to limit the scope of the present invention. The shapes and dimensions in the respective drawings are for schematic illustration only, and do not strictly reflect actual shapes and dimensional ratios.

[0033] Figure 5(a) and 5(b) It is a structural schematic diagram of the resistance transition memory according to the present invention.

[0034] As shown in Figure 5(a), the resistance transition memory according to the present invention comprises: a substrate 501; a lower electrode 502 disposed on the substrate 501; a resistance transition memory layer (functional layer) disposed on the lower ele...

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Abstract

The invention provides a nonvolatile resistance transformation type memorizer. A buffer layer is arranged between a resistance transformation type accumulation layer and an electrode, thereby the total resistance of the memorizer can be increased, and the working current of the memorizer can be further reduced; and the buffer layer can improve the barrier height at an interface, thereby the working voltage of the memorizer is reduced, and the power consumption of the memorizer is further reduced. The resistance transformation type memorizer with a buffer layer structure has simple manufacturing process and low manufacturing cost, and is compatible to the traditional CMOS process. Accordingly, the invention also provides a method for manufacturing the nonvolatile resistance transformation type memorizer.

Description

technical field [0001] The invention relates to the field of information storage, and more particularly relates to a resistance transition memory and a manufacturing method thereof. Background technique [0002] With the popularity of portable electronic devices such as mobile phones, MP3, MP4 and notebook computers, non-volatile memory plays an increasingly important role in the field of digital storage. The biggest advantage of non-volatile memory is that the stored data can still be preserved for a long time without power supply. At present, non-volatile memories on the market are mainly flash memory (flash memory) products. The rapid development of digital high technology has put forward higher requirements for the performance of information storage products, such as high speed, high density, low power consumption, long life and smaller size, etc., but the existing random storage technology still has high operating voltage , Short retention time, poor endurance, slow a...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24G11C16/02G11C11/56
Inventor 刘明李颖弢龙世兵王琴王艳刘琦张森左青云
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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