Process for producing gan single-crystal, gan thin-film template substrate and gan single-crystal growing apparatus

Abstract

Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN thick film with a fine property; and a GaN single crystal growing apparatus. Provided is a manufacturing method of a GaN single crystal by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaCl (gallium chloride); and forming a GaN thin film by a reaction of the generated GaCl (gallium chloride) with NH 3 (ammonia) gas which is hydroxide gas on a substrate, the manufacturing method comprising supplying the NH 3 gas in a vicinity of the substrate (for example, at a position which is separated from the substrate by a distance of 0.7-4.0 times as longer than a diameter of the substrate) through a nozzle. Further, as the substrate, an NGO(011) substrate in which the lattice constant thereof is similar to that of GaN is used.

Description

Technical field [0001] The present invention relates to a GaN single crystal manufacturing method using a hydride vapor phase growth method, a GaN single crystal growth device, and a GaN thin film template substrate used in the manufacture of light emitting devices such as blue LEDs. Background technique [0002] In the past, as one of the crystal growth methods, there has been known a hydride vapor phase growth method in which a metal chloride produced by reacting a heated metal raw material and hydrogen chloride is used as a raw material gas, and crystals are grown from the chloride gas and a hydride gas of a non-metallic material. (HVPE: Hydride Vapor Phase Epitaxy). [0003] image 3 It is a schematic diagram showing the structure of a conventional vapor phase growth apparatus (HVPE apparatus). [0004] The HVPE device 100 is composed of a sealed reaction furnace 1 and a resistance heating heater 2 provided on the outer periphery of the reaction furnace 1. The reaction furna...

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Problems solved by technology

Among them, the thermal decomposition rate of ammonia is several percent, which is different from that of arsine (AsH 3 ), Phosphine (PH 3 ) is lower than the thermal decomposition rate

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