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Method for developing m-face or a-face ZnO film by metal organic chemical vapour deposition

A metal organic chemistry and vapor deposition technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as difficulty in meeting industrialization needs, and achieve the effect of wide industrial application prospects

Inactive Publication Date: 2007-12-05
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After 1998, in γ-LiAlO 2 A non-polar m-plane GaN film with no built-in electric field has been prepared on the (100) surface (Journal of Crystal Growth 193, 127 (1998); Nature 406, 865 (2000)); recently, we have also used laser pulse deposition (following Abbreviated as PLD) technology in γ-LiAlO 2 A nonpolar a-plane ZnO thin film was successfully prepared on (302) substrate (Journal of Crystal Growth, (2007), In Press), which makes the γ-LiAlO 2 The preparation of wide-bandgap semiconductor epitaxial thin film materials (GaN, ZnO) has attracted great attention, but this technology (PLD) is still difficult to meet the needs of industrialization

Method used

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  • Method for developing m-face or a-face ZnO film by metal organic chemical vapour deposition
  • Method for developing m-face or a-face ZnO film by metal organic chemical vapour deposition
  • Method for developing m-face or a-face ZnO film by metal organic chemical vapour deposition

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Embodiment 1

[0022] Example 1 LiAlO on (200) plane 2 m-plane ZnO epitaxial films grown on

[0023] The specific growth steps are as follows:

[0024] 1. Cleaning of the substrate wafer. The polished (200) surface LiAlO 2 Put the wafer into a beaker filled with acetone, ultrasonically clean it at 20°C for 10 minutes, and then take out the wafer and soak it in absolute ethanol for 10 minutes. During the whole cleaning process, avoid direct contact with the wafer with your hands.

[0025] 2. Growth. The cleaned (200) surface γ-LiAlO 2 The single crystal substrate is placed in the growth chamber of the LP-MOCVD system. The reaction process uses diethyl zinc (DEZn) as the zinc source, and high-purity oxygen (O 2 ) as the oxygen source, and high-purity argon (Ar) as the carrier gas and diluent gas of the saturated vapor of the zinc source. Diethylzinc (DEZn) bubbler conditions were maintained at 760 Torr, 14°C. Zinc source flow is 20sccm, O 2 The gas flow is 120 sccm, the Ar gas flow is ...

Embodiment 2

[0030] Example 2 In (302) LiAlO 2 a-plane ZnO epitaxial film grown on

[0031] Using LiAlO on the (200) plane as above 2 The same process parameters for growing m-plane ZnO epitaxial films on (302)LiAlO 2 a-plane ZnO films were grown on them.

[0032] The thin film prepared in embodiment 2 has been characterized, and the results are explained as follows:

[0033] Fig. 5 is the XRD spectrum of the sample of Example 2.

[0034] Figure 5 is the XRD pattern of the prepared sample. γ-LiAlO 2 The diffraction peak of the substrate (302) crystal plane is at 61.37°; the peak of a-plane ZnO is at 56.53°. Fig. 6 is the rocking curve of the sample of Example 2, and its full width at half maximum FWHM=0.45°.

[0035] Fig. 7 is the laser Raman scattering pattern of the sample of embodiment 2, all have very strong ZnO lattice vibration signal in the sample, and wherein wavenumber is 97.6cm -1 The characteristic peaks of ZnO correspond to the low-energy E 2 modes of vibration, while ...

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Abstract

The present invention is metal organic chemical vapor deposition process of growing ZnO film in m plane or a plane, and features that in a low pressure metal organic chemical vapor deposition system, gamma-LiAlO2 monocrystal substrate of (100) plane or (302) plane is set on the bearing stage for ZnO film to grow on with diethyl zinc as the zinc source, high purity oxygen as the oxygen source and high purity argon as the saturated zinc vapor carrier and diluting gas. The ZnO film growing conditions include diethyl zinc bubbler pressure of 760 torr, zinc source flow rate of 15-25 sccm, O2 flow rate of 100-150 sccm, Ar flow rate of 80-120 sccm, O / Zn molar ratio of 80-200, vacuum chamber pressure of 80-120 Pa, growth temperature of 400-750 deg.c and growth time of 20-60 min. The present invention can grow high quality non-polar ZnO film and possesses excellent industrial application value.

Description

technical field [0001] The present invention relates to γ-LiAlO 2 Substrate and ZnO wide bandgap semiconductor thin film material, especially a method for growing m-plane or a-plane ZnO thin film by metal-organic chemical vapor deposition, specifically, in high-quality matching substrate material γ-LiAlO 2 A method for growing m-plane and a-plane ZnO wide bandgap semiconductor films on (100) and (302) planes using low-pressure-metal-organic chemical vapor deposition (hereinafter referred to as LP-MOCVD) equipment. Background technique [0002] ZnO has a wide direct band gap (3.37eV) in the near-ultraviolet region, and is expected to be used in the production of optoelectronic components such as ultraviolet light-emitting diodes (UV-LEDs), flat panel displays (FPDs), and transparent electrodes. Compared with GaN, ZnO has the advantages of higher exciton binding energy (60meV), good conductivity, non-toxicity and low price, so it has become another highly valued wide bandgap ...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/448C23C16/52
Inventor 林辉周圣明顾书林张荣杨卫桥
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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