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Gallium-source reactor

A reactor and gallium source technology, applied in the field of gallium source reactors, can solve the problems of easy contamination of substrates, difficult to control the generation rate of gallium chloride, increase in wafer defect density, etc., so as to avoid substrate contamination. Effect

Inactive Publication Date: 2017-08-04
镓特半导体科技(上海)有限公司
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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a gallium source reactor, which is used to solve the problem that the generation rate of gallium chloride in the gallium source reactor is difficult to control in the prior art, and at the same time solves the problem that the substrate is easy to The problem of increased defect density of the resulting wafer due to contamination

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Embodiment Construction

[0050] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0051] see Figure 1 to Figure 2 , the first embodiment of the present invention relates to a gallium source reactor. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present inven...

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Abstract

The invention provides a gallium-source reactor. The gallium-source reactor at least comprises a reaction layer, a first air inlet pipeline located on the top end of the reaction layer, and a first air outlet pipeline located on the bottom end of the reaction layer, wherein the bottom end of the first air inlet pipeline extends into the reaction layer and is arranged close to the bottom end of the reaction layer, and the top end of the first air outlet pipeline extends into the reaction layer and is arranged close to the top end of the reaction layer. According to the invention, since the bottom end, extending into the reaction layer, of the first air inlet pipeline is arranged close to the bottom end of the reaction layer and the top end, extending into the reaction layer, of the first air outlet pipeline is arranged close to the bottom end of the reaction layer, hydrogen chloride gas enters the reaction layer from the first air inlet pipeline; then since liquid metallic gallium totally soaks the bottom end of the first air inlet pipeline, the hydrogen chloride gas passes through the liquid metallic gallium and reacts with the liquid metallic gallium; eventually produced gallium chloride flows out from the first air outlet pipeline; and thus, the hydrogen chloride gas is allowed to fully react with metal gallium.

Description

technical field [0001] The invention relates to the technical field of reactors, in particular to a gallium source reactor. Background technique [0002] Hydride Vapor Phase Epitaxy (HVPE, Hydride Vapor Phase Epitaxy) equipment is a compound growth process equipment, mainly used in a high temperature environment of about 1000 degrees through such as H 2 , HCl and other hydride gases to epitaxially grow a thick film or crystal such as GaAs or GaN on the surface of the substrate. [0003] In the existing HVPE equipment, the gallium source reactor for reacting hydrogen chloride gas and metal gallium mainly has the following defects: 1. The contact time between hydrogen chloride gas and metal gallium is short, and the hydrogen chloride gas has already flowed out of the reaction zone without participating in the reaction. 2. Changes in the liquid metal gallium balance in the reactor cause changes in the conversion ratio of hydrogen chloride to gallium chloride, which in turn lea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/14C30B25/08C23C16/448C23C16/455
CPCC30B25/14C23C16/4482C23C16/45561C30B25/08
Inventor 特洛伊·乔纳森·贝克王颖慧罗晓菊谢宇
Owner 镓特半导体科技(上海)有限公司
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