Tail gas filter for preparing gallium nitride by hydride or chloride vapor phase epitaxy

Abstract

The invention discloses a tail gas filter for preparing gallium nitride by hydride or chloride vapor phase epitaxy, which relates to a particle separator special for separating dispersed particles from air and adopting a rigid hollow filter body. The tail gas filter consists of a shell, a plug, a separation net, a screen and a clamp, wherein the shell is a columnar hollow water jacket; the plug is a sphere coiled into a columnar stainless steel net or a stainless steel wire; the separation net is made of stainless steel wires; the screen is a six to ten-layer anticorrosion metal silk screen; the plug is directly placed inside the shell at one end of an air inlet of the filter the separation net is directly placed at the position inside the shell between the plug and the clamp; and the screen is arranged at one end of an air outlet of the filter layer by layer and fixed inside the shell through the clamp. The tail gas filter reduces, even eliminates ammonium chloride dust, gallium vapor and gallium chloride vapor produced during preparing the gallium nitride by the hydride or chloride vapor phase epitaxy, promotes operators, environments and vacuum pumps, and optimizes the production process and the growth quality of the gallium nitride.

Description

technical field [0001] The technical solution of the present invention relates to a particle separator using a rigid hollow filter body specially used for separating dispersed particles from gas, specifically an exhaust gas filter for preparing gallium nitride by vapor phase epitaxy of hydride or chloride. Background technique [0002] In recent years, the method of preparing gallium nitride by hydride or chloride vapor phase epitaxy has been widely used in the research and development of gallium nitride self-supporting. Since gallium nitride materials have better electrical and optical properties than silicon materials, gallium nitride materials have great room for development in microwave devices, power devices and optoelectronic devices. [0003] However, in the process of preparing gallium nitride by vapor phase epitaxy of hydride or chloride, exhaust gas which is extremely harmful to people, the environment and equipment will inevitably be produced. There are three haza...

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Problems solved by technology

However, this method will introduce water and other impurities into the hydride or chloride vapor phase epitaxy preparation system, which will affect the quality of the prepared gallium nitride material, so it is not acceptable

So far, no exhaust gas filter dedicated to the preparation of gallium nitride by hydride or chloride vapor phase epitaxy has been found.

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