Preparation method of gallium arsenide thin-film multijunction stacked solar cells

A technology of solar cells and gallium arsenide, applied in the field of solar cells, can solve problems such as lattice mismatch, increase cell cost, and affect photoelectric conversion efficiency.

Active Publication Date: 2013-03-27
TIANJIN LANTIAN SOLAR TECH +2
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Problems solved by technology

However, due to the growth of the bottom cell/middle cell/top cell on the P-type Ge substrate, there is still a lattice mismatch problem, which affec

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  • Preparation method of gallium arsenide thin-film multijunction stacked solar cells
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  • Preparation method of gallium arsenide thin-film multijunction stacked solar cells

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[0044] Example: see attached Figure 1-Figure 5 :

[0045] Step 1. Reverse growth of epitaxial layer to prepare GaAs triple-junction solar cell

[0046] (1) select an n-type doped Ge sheet as the Ge substrate 9, the thickness of the Ge sheet is 150-200 microns (the preferred thickness of the present invention is 150 microns), and the doping concentration is 1×10 17 -1×10 18 cm -3 (the preferred doping concentration of the present invention is 1×10 18 cm -3 );

[0047](2) MOCVD equipment is used to epitaxially grow a GaAs buffer layer 8, a GaInP corrosion stop layer 7, an n-type doped GaAs cap layer, a first junction GaInP cell 6 as a top cell, and a first tunnel cell on the Ge substrate in (1) in sequence. Punch junction 5, second junction GaAs battery 4 as middle battery, second tunnel junction 3, n-type doped In x (Al y Ga 1-y ) 1-x As graded layer 2 and the third junction In as the bottom cell x Ga 1-x As battery 1, the growth temperature is 500°C-800°C (the pre...

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Abstract

The invention relates to a preparation method of gallium arsenide thin-film multijunction stacked solar cells. The preparation method is characterized by including the steps of firstly, allowing for reverse growth of an epitaxial layer to prepare a GaAs three-junction solar cell; secondly, bonding the cell prepared in the step 1 to a Si substrate; thirdly, stripping a Ge substrate; fourthly, adhering a low-cost substrate; and fifthly, stripping the Si substrate. The preparation method allows for epitaxial growth of a top cell and an intermediate cell prior to growth of a bottom cell, and accordingly the lattice subjected to epitaxial growth firstly is guaranteed to match with perfect epitaxial growth of the top cell and the intermediate cell; doping uniformity and film reliability in large-area epitaxial thin films are increased, and photoelectric conversion efficiency is further improved; by the use of the low-cost support substrate lower than Ge in specific weight, the weight of the cells is reduced, the power ratio of the solar cells is increased, the cost of the cells is reduced effectively, and application prospect of the III-V compound solar cells is improved greatly.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a preparation method of gallium arsenide thin film multi-junction laminated solar cells. Background technique [0002] At present, the product types of thin-film solar cells in the photovoltaic market mainly include Si-based thin-film solar cells, CIGS thin-film solar cells and CdTe thin-film cells. These thin-film solar cells can be divided into rigid (ie, glass substrate) cells and flexible (stainless steel or polyester film substrate) cells according to the substrate material. Compared with ordinary crystalline Si solar cells with a thickness of about 180 microns to 200 microns, the thickness of thin film solar cells is no more than 50 microns, which greatly reduces the materials used in batteries. The application scale in the photovoltaic market is gradually expanding. More than 13% market share. However, all kinds of thin-film batteries have some difficult bottlenecks,...

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/521Y02P70/50
Inventor 高鹏王帅刘如彬康培孙强穆杰
Owner TIANJIN LANTIAN SOLAR TECH
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