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UV light emitting diode

A technology of light-emitting diodes and ultraviolet light, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of uneven injection of electrons and holes, increased driving voltage of light-emitting diodes, and deterioration of internal quantum efficiency.

Active Publication Date: 2016-02-10
SEOUL VIOSYS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the driving voltage of the light-emitting diode increases, and electrons and holes are injected into the well layer unevenly, resulting in deterioration of the internal quantum efficiency.

Method used

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Embodiment Construction

[0045] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following exemplary embodiments are provided by way of examples in order to fully convey the spirit of the present invention to those skilled in the art to which the present invention belongs. Correspondingly, the present invention is not limited to the embodiments disclosed herein, but can also be implemented in different forms. In the drawings, the width, length, thickness, etc. of elements may be exaggerated for clarity and ease of description. When an element or layer is referred to as being "disposed" or "disposed on" another element or layer, it can be directly "disposed" or "disposed on" the other element or layer, or there may be intervening element. Throughout the specification, similar reference numerals indicate similar elements having the same or similar functions. On the other hand, in this document, the content of the m...

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Abstract

A UV light emitting diode having improved internal quantum efficiency is provided. The UV light emitting diode includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure. The active area of the multi-quantum well structure includes barrier layers and well layers which are alternately stacked. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers has a smaller thickness than of the well layers and at least one of the barrier layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer. So driving voltage of the UV light emitting diode is reduced, and the internal quantum efficiency is improved.

Description

[0001] This application claims the priority and rights of Korean Patent Application No. 10-2014-0096626 filed on July 29, 2014, which is incorporated herein by reference in its entirety. Technical field [0002] Exemplary embodiments relate to UV light emitting diodes. More specifically, the exemplary embodiments relate to UV light emitting diodes with improved internal quantum efficiency. More specifically, the exemplary embodiments relate to UV light emitting diodes with improved electron and hole recombination efficiency in the active region. Background technique [0003] Generally, gallium nitride (GaN)-based semiconductors are widely used in UV, blue / green light-emitting diodes or laser diodes. These diodes are used in many applications (including full-color displays, traffic signs, general lighting and optical communication equipment) Use as a light source. This GaN-based light emitting diode includes an InGaN-based active layer having a multiple quantum well structure bet...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/06H01L33/32
CPCH01L33/06H01L33/145H01L33/32H01L33/0008H01L33/14
Inventor 韩昌锡李阿兰车金华睦
Owner SEOUL VIOSYS CO LTD
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