Gallium-nitride based light emitting diode light emitting layer structure

Abstract

A number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand are provided. The light-emitting layer structure provided is located between the n-type GaN contact layer and the p-type GaN contact layer. Sequentially stacked on top of the n-type GaN contact layer in the following order, the light-emitting layer contains a lower barrier layer, at least one intermediate layer, and an upper barrier layer. That is, the light-emitting layer contains at least one intermediate layer interposed between the upper and lower barrier layers. When there are multiple intermediate layers inside the light-emitting layer, there is an intermediate barrier layer interposed between every two immediately adjacent intermediate layers.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to the gallium-nitride (GaN) based light emitting diode (LED), and in particular to the structure of the light-emitting layer of the GaN-based LED. [0003] 2. The Prior Arts [0004] LEDs have long been widely used as indicators or light sources in various electronic consumer devices due to their features including low power consumption, low heat dissipation, and long operation life. In recent years, researches have been focused on the development of LEDs with various colors and LEDs with high luminance. Among these researches, highly efficient and illuminant blue-light LEDs that can be put to practical use receive the most attention. In October 1995, Nichia Corporation, Japan, announced the successful production of highly illuminant blue-light LEDs based on the indium-gallium-nitride (InGaN) material. This breakthrough has led the world's optoelectronic industry to invest tremendous capit...

AI Technical Summary

Benefits of technology

[0006] To overcome the foregoing disadvantages, the present invention provides a number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand.

[0008] The upper and lower barrier layers have higher band gaps than that of the intermediate layer so that the electrons and the holes have a higher possibility joining with each other within the intermediate layer, which in turn increase the lighting efficiency of the GaN-based LED. The barrier layers have a thickness between 5 Å and 300 Å, and a growing temperature between 400° C. and 1000° C.

Problems solved by technology

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