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Method for recycling and preparing sodium arsenate and gallium metal from gallium arsenide waste residue

A technology of gallium arsenide and metal gallium, which is applied in the field of recovery and preparation of sodium arsenate and metal gallium, to achieve the effect of solving environmental pollution, resource waste and high utilization value

Active Publication Date: 2020-03-31
YANGZHOU NINGDA NOBLE METAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problem of recycling and harmless treatment of gallium arsenide-containing waste residue, a method for recovering and preparing sodium arsenate and metal gallium from gallium arsenide waste residue is provided

Method used

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  • Method for recycling and preparing sodium arsenate and gallium metal from gallium arsenide waste residue
  • Method for recycling and preparing sodium arsenate and gallium metal from gallium arsenide waste residue

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Embodiment 1

[0032] A method for recovering and preparing sodium arsenate and metal gallium from gallium arsenide waste slag, comprising the steps of:

[0033] (1) Using gallium arsenide waste slag as raw material, the gallium arsenide waste slag is a slimy gray-black massive solid, after drying at 105°C, crush it through a 100-mesh sieve, divide the waste slag into 100g / parts, and set aside ;

[0034] (2) Put the first part of waste residue in a 1L beaker, add 500mL of distilled water, add 40g of NaOH according to the NaOH concentration of 80g / L, heat and stir, control the stirring speed at 600rpm, control the temperature at 70°C, and follow the 80mL / L H 2 o 2 Add 40mL of hydrogen peroxide at a concentration of 10mL each time, and add in four times to form an alkaline-oxidizing solution system, so that the arsenic and gallium in the waste residue are simultaneously and rapidly dissolved in the alkaline-oxidizing solution system to form a leachate, realizing the same For the effective se...

Embodiment 2

[0041] A method for recovering and preparing sodium arsenate and metal gallium from gallium arsenide waste slag, comprising the steps of:

[0042] (1) Using gallium arsenide waste slag as raw material, the gallium arsenide waste slag is a slimy gray-black massive solid, after drying at 105°C, crush it through a 100-mesh sieve, divide the waste slag into 100g / parts, and set aside ;

[0043] (2) Put 1 part of waste residue in a 1L beaker, add 500mL of distilled water, add 50g of NaOH according to the NaOH concentration of 100g / L, heat and stir, control the stirring speed at 800rpm, and control the temperature at 70°C, according to 80mL / L of H 2 o 2 Add 40mL of hydrogen peroxide at a concentration of 10mL each time, and add in four times to form an alkaline-oxidizing solution system, so that the arsenic and gallium in the waste residue are simultaneously and rapidly dissolved in the alkaline-oxidizing solution system to form a leachate, realizing the same For the effective sepa...

Embodiment 3

[0048] A method for recovering and preparing sodium arsenate and metal gallium from gallium arsenide waste slag, comprising the steps of:

[0049] (1) Using gallium arsenide waste slag as raw material, the gallium arsenide waste slag is a slimy gray-black massive solid, after drying at 105°C, crush it through a 100-mesh sieve, divide the waste slag into 100g / parts, and set aside ;

[0050] (2) Put 1 part of waste residue in a 1L beaker, add 500mL of distilled water, add 50g of NaOH according to the NaOH concentration of 100g / L, heat and stir, control the stirring speed at 600rpm, and control the temperature at 70°C, according to the concentration of 100mL / L of H 2 o 2 Add 50mL of hydrogen peroxide at a concentration of 10mL each time, and add in five times to form an alkaline-oxidizing solution system, so that the arsenic and gallium in the waste residue are simultaneously and rapidly dissolved in the alkaline-oxidizing solution system to form a leachate, achieving the same ...

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Abstract

The invention relates to a method for recycling and preparing sodium arsenate and gallium metal from gallium arsenide waste residue. The method comprises the following steps of leaching the gallium arsenide waste residue in an alkaline-oxidized solution system after the gallium arsenide waste residue is dried, crushed and screened, wherein the conditions of the NaOH concentration, the oxidant concentration, the time, the temperature and the like during leaching are controlled so that arsenic and gallium are simultaneously quickly dissolved in a leaching solution to the great extent; performingevaporative crystallization to make the sodium arsenate crystallize preferentially to realize quick effective separation of the arsenic and the gallium; performing recrystallization to improve the purity of the sodium arsenate; and performing cyclone electrowinning to obtain high-purity gallium metal. The raw material gallium arsenide waste residue is from solid waste landfill and is sampled without cost; according to the method provided by the invention, the sodium arsenate and gallium metal are recycled and prepared from the waste residue; the purity of the prepared sodium arsenate is at least 95 percent; the purity of the prepared gallium metal is at least 3N; the prepared sodium arsenate and gallium metal have great utilization value; the recycled and purified sodium arsenate can serve as a chemical raw material; and the method disclosed by the invention effectively solves the problems of environment pollution and resource waste and meets the requirements of sustainable development society.

Description

technical field [0001] The invention relates to the technical field of recycling waste materials, in particular to a method for preparing sodium arsenate and metal gallium from gallium arsenide waste residue. Background technique [0002] Gallium arsenide is one of the most mature compound semiconductor materials at present. Compared with silicon, it has the characteristics of wide band gap, high electron mobility, high electron saturation drift speed, and direct bandgap energy band structure. These characteristics determine its main position in the development of microelectronic devices such as high frequency, high speed, high temperature and radiation resistance. Gallium arsenide's direct bandgap characteristics determine that it can also be used to make optoelectronic devices and solar cells. Gallium arsenide materials are mainly divided into two categories: semi-insulating gallium arsenide materials and semiconductor gallium arsenide materials. Semi-insulating gallium ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B7/00C22B58/00C25C1/22C01G28/02
CPCC01G28/023C01P2006/80C22B7/008C22B58/00C25C1/22Y02P10/20
Inventor 朱炳龙吴彤种柯李尧岳喜龙童霏樊红杰秦恒飞吴娟李静周全法
Owner YANGZHOU NINGDA NOBLE METAL CO LTD
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