Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

ZnSe-GaP solid solution nanometer material and preparation method thereof

A nanomaterial and solid solution technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of difficulty in the preparation of multi-component solid solution nanowires, and achieve process parameters that are easy to control and easy to obtain. , the effect of high growth yield

Active Publication Date: 2016-02-10
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Compared with other semiconductor nanomaterials and solid solution thin film materials, the preparation of nanoscale multi-component solid solution nanowires is very difficult
Although there are a few reports on ZnSe-GaP solid solutions, most of them exist in the form of thin film bulk materials.
One-dimensional ZnSe-GaP solid solution nanowires have not been reported so far

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ZnSe-GaP solid solution nanometer material and preparation method thereof
  • ZnSe-GaP solid solution nanometer material and preparation method thereof
  • ZnSe-GaP solid solution nanometer material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The present embodiment ZnSe-GaP solid solution nanomaterial is prepared by the following process:

[0030] 1. Weigh a certain mass of zinc selenide and gallium phosphide powder (any molar ratio is acceptable), and place them in two porcelain boats respectively. Then weigh a small amount of zinc powder and selenium powder according to a molar ratio of 1:1, and the molar ratio of the two to the zinc selenide powder is 1:10, and put them in a porcelain boat filled with zinc selenide and mix them evenly.

[0031] 2. According to Figure 4 Arrangement method Put the two porcelain boats in step 1 into two small quartz tubes respectively, and put the two small quartz tubes into the large quartz tube together, and place the three quartz tubes in parallel with the nozzles in the same direction. Put the large quartz tube into the three-temperature-zone tube furnace, adjust the position of the porcelain boat, so that the porcelain boat with gallium phosphide is placed in the heat...

Embodiment 2

[0038] The present embodiment ZnSe-GaP solid solution nanomaterial is prepared according to the following steps:

[0039]1. Weigh a certain mass of zinc selenide and gallium phosphide powder (any molar ratio is acceptable), and place them in two porcelain boats respectively. Take zinc powder and selenium powder again, the mol ratio of zinc powder and selenium powder is 5:1, and the mol ratio of selenium powder and zinc selenide powder is 3:10, put in the porcelain boat that holds zinc selenide and mix uniform.

[0040] 2. Put the two porcelain boats in step 1 into two small quartz tubes respectively, and put the two small quartz tubes into the large quartz tube together, and place the three quartz tubes in parallel with the nozzles in the same direction. Put the quartz tube into the three-temperature zone tube furnace, adjust the position of the porcelain boat, so that the porcelain boat with gallium phosphide is in the heating center of the middle temperature zone of the tub...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The present invention discloses a ZnSe-GaP solid solution nanometer material and a preparation method thereof. According to the present invention, the prepared ZnSe-GaP solid solution nanometer material has the linear shape, has the diameter of 50-500 nm, and has the length of 5 [mu]m-5 mm; the preparation method comprises: adding zinc selenide, gallium phosphide, selenium powder and zinc powder to a three-temperature-zone tubular furnace, and growing on a graphite substrate by using a CVD method so as to obtain the ZnSe-GaP solid solution nanometer material; and the prepared ZnSe-GaP solid solution nanometer material has characteristics of good crystal, large aspect ratio and uniform size, and the preparation method has characteristics of simple process, easy process parameter control and simple operation, is suitable for large area preparation, and is used for preparation of nanometer optoelectronic devices.

Description

technical field [0001] The invention relates to the fields of nano-photoelectric detection, nano-solar cells, nano-lasers, nano-LEDs, semiconductor nano-materials and nano-technology, in particular to a ZnSe-GaP solid solution nano-material and a preparation method thereof, and the prepared ZnSe-GaP solid solution nano-material can be used Used in nano photodetectors, nano solar cells, nano lasers, nano LEDs or other nano optoelectronic devices. Background technique [0002] Compared with bulk materials, nanomaterials have the characteristics of small average particle size, many surface atoms, large specific surface area, and high surface energy. Therefore, many bulk materials do not have excellent properties, especially in optics, electricity, heat, and magnetism. Nanotechnology has a very important role and application prospects in the fields of nanotechnology, mechanics and life sciences, and has attracted the close attention of research institutions and researchers all o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04C01B25/08B82Y30/00
Inventor 姜辛杨文进杨兵刘宝丹
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com