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39results about How to "Process parameters are easy to adjust" patented technology

Reciprocated extruding device for preparing superfine grain magnesium alloy and processing method thereof

The invention provides a method for preparing a superfine grain magnesium alloy and belongs to the technical field of nonferrous metal plastic processing. The superfine grain magnesium alloy comprises a superfine grain magnesium alloy tube and a superfine grain magnesium alloy block. According to the method, a reciprocated extruding device for preparing the superfine grain magnesium alloy is included. The method for preparing the superfine grain magnesium alloy tube is characterized by comprising the following steps: fixing a reciprocated extruding die; pre-heating a magnesium alloy blank; heating equipment; placing the magnesium alloy blank; carrying out reciprocated extruding deformation; standing; and discharging a superfine grain magnesium alloy product. According to the method, the superfine grain magnesium alloy tube or the superfine grain magnesium alloy block can be prepared; and the production efficiency is high and the application range is very wide.
Owner:TAIYUAN UNIV OF TECH

Gallium oxide heterogeneous structure as well as growth method and special device thereof

The invention belongs to the technical field of semiconductor materials and nanometer, specifically relates to a gallium oxide heterogeneous structure and a growth method thereof, and particularly relates to a method and a special device for a gallium oxide heterogeneous structure with a pseudo quartic symmetry nanometer size formed by beta-Ga2O3 and k-Ga2O3. The gallium oxide heterojunction comprises a beta-Ga2O3 nanowire trunk and a k-Ga2O3 nanorod on the surface of the beta-Ga2O3 nanometer linear trunk, wherein the length of the beta-Ga2O3 nanowire is 5-100 mu m and the diameter is 50-1000nm; the size of the k-Ga2O3 nanorod is 50-200nm and is distributed on the nanowire surface in a mode of pseudo quartic symmetry. The method adopted in the invention can be used for accurately controlling the temperature and ammonia gas flow in a deposition area in the process of chemical vapor deposition (CVD), so as to spontaneously form a k-Ga2O3 / beta-Ga2O3 heterogeneous structure, and the obtained k-Ga2O3 is a new crystal structure in a gallium oxide system and has rhombic symmetry. The prepared k-Ga2O3 / beta-Ga2O3 heterogeneous structure has extremely strong cathode ray fluorescence property in an ultraviolet region, has the discrete characteristic of luminescence and is suitable for serving as an ultraviolet light electricity detector and suitable for hydrogen production through photocatalytic water splitting.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Method for preparing Al mixed with ZnO nanosheet array by adopting pulsed electromagnetic field

The invention relates to a method for preparing Al mixed with ZnO nanosheet array by adopting a pulsed electromagnetic field, which is as follows: an FTO conductive sheet glass is placed in an ultrasonic cleaner for cleaning; the mixed solution I of zinc acetate, ethanol amine and ethylene glycol monomethyl ether is dripped on the conductive sheet glass, and is uniformly coated through a spin coater and heat treated to form a ZnO film thereon; the FTO conductive sheet glass coated with the ZnO film is put into a reaction kettle, the mixed solution II formed by aluminium nitrate, zinc nitrate and hexamethylene tetramine as well as deionized water is filled into the reaction kettle, the pulsed electromagnetic field treatment is applied to the reaction system in the reaction kettle, the kettle is moved to a constant temperature oven for hydrothermal reaction after the treatment, and the sediment on the surface of the glass is washed and dried after the hydrothermal reaction, so as to obtain the Al mixed with ZnO nanosheet array. The method is simple to operate, has low energy consumption, enables the orientation of the nanosheets to be identical, has higher verticality, enables the nanosheets to be neatly arrayed, has big specific surface area, facilitates electron transport when serving as the photoanode, and improves the efficiency of the dye sensitized solar cell.
Owner:LIAONING UNIVERSITY OF TECHNOLOGY

Preparation method and application of TiO2 nanotube coated with amorphous layer

The invention discloses a preparation method and application of a TiO2 nanotube coated with an amorphous layer. According to the preparation method, titanium oxide powder is firstly adopted and subjected to hydrothermal reaction in a sodium hydroxide solution to obtain a sodium titanate nanotube; the sodium titanate nanotube is washed and subjected to acid exchange to obtain a titanic acid nanotube; lastly, the titanic acid nanotube is subjected to annealing at a proper temperature to obtain the titanium dioxide coated with the amorphous layer. The main body of the titanium dioxide nanotube is an anatase phase and adopts a one-dimensional tubular structure; a part of amorphous titanium dioxide remains on the surface of main body of the titanium dioxide nanotube. As the amorphous titanium dioxide layer is adopted, the specific surface area of the material is higher and the surface functional groups are rich; moreover, the material has certain light absorbing characteristics in a visible light region and the TiO2 nanotube can be applied in the field of water treatment, sensing, dye stuff / quantum dot sensitization solar batteries.
Owner:PEKING UNIV

Calcium metaphosphorate production process

The invention discloses a manufacturing technology of calcium metaphosphate, which comprises the following steps: placing lime cream in the reaction container; adding the deionized water to immerse the raw material; heating; stirring; adding phosphate slowly until the pH value is 3-3.5; fetching the filter liquid to obtain the synthetic filter of calcium biphosphate; adding the deionized water to dilute the solution at 1.05-1.10 specific gravity; cooling; adding hydrogen dioxide solution; stirring; adding precipitant; stewing; filtering the calcium biphosphate in another container; heating the solution to concentrate at 1.3-1.35 specific gravity; subsiding the phosphate again; adjusting the pH value at 3.2; shifting the material in the spray drying tower to compress into calcium metaphosphate after filtering. The invention simplifies the manufacturing technology and reduces the cost, which improves the production quality and stability.
Owner:MEDICAL COLLEGE OF XIAN JIAOTONG UNIV

Preparation method of high-heat-conduction aluminum nitride thick film

The invention relates to a preparation method of a high-heat-conduction aluminum nitride thick film, belongs to the technical field of surface coating preparation and application and mainly solves the technical problems that an aluminum nitride thick film can not be prepared, the deposition speed is low, commercialization is difficult to realize and the like in the prior art. According to the method, the aluminum nitride thick film is deposited through arc ion plating, the nitrogen / aluminum ratio in the film is uniform, the thickness of the prepared AlN high-heat-conduction film can be up to 3-10mu m, and a large bonding force can be generated between the film and a substrate, wherein the involved substrate material can be metal such as stainless steel, iron, copper, aluminum and the like, or can be an inorganic non-metal material such as ceramic, glass and the like, or can be a high-molecular organic polymer such as epoxy resin, polyimide and the like. The preparation method comprises the following steps: performing surface treatment on the substrate material; and by selecting pure aluminum as a cathode target material and using pure nitrogen gas as reacting gas, forming the AlN high-heat-conduction film through reaction between aluminum ions obtained by ionization and the nitrogen gas, wherein the purity of the aluminum target material is 99.99%, and the purity of the nitrogen gas is 99.999%. Thus, the method is applicable to multiple fields such as electronic measuring instruments, computer equipment, measurement and control systems, airplanes, precision weapons and the like.
Owner:辽宁法库陶瓷工程技术研究中心

High-temperature-resistant composite diaphragm for lithium ion battery and preparation method thereof

The invention relates to a high-temperature-resistant multi-layer composite diaphragm for a lithium ion battery and a preparation method thereof. The diaphragm is of an A1 / B / A2 three-layer structure or an A1 / B two-layer structure, wherein A1 and A2 are high-temperature-resistant polymer porous membranes prepared by applying an electrostatic spinning process; the middle layer B is a polyolefin diaphragm, A1 / B / A2 or A1 / B is compounded through a compounding process, and a three-layer or two-layer composite diaphragm is obtained. The lithium battery diaphragm prepared by the invention has the characteristics of lower closed pore temperature of the middle layer and high temperature resistance of the porous diaphragm on the surface layer, the preparation process is simple and feasible, the adhesive force between different diaphragms is strong, the thermal dimensional stability is excellent, and the dimensional stability, the integrity and the electrolyte wettability of the diaphragm under the condition of extremely high temperature of the lithium ion battery can be improved; therefore, the safety of the battery is improved and the application prospect is good.
Owner:BEIJING YUCHENG TECH CO LTD

ZnSe nanowire and preparation method and application thereof

The invention relates to a ZnSe nanowire and a preparation method and an application thereof. The ZnSe nanowire is grown along the crystal orientation of the <100>. The ZnSe nanowire is provided with a sphalerite structure, the average diameter is 20 nm-80 nm, the length is 0.5 [mu]m-10 [mu]m, the size is uniform, the crystallinity is good, and the ZnSe nanowire has no structural defects such as a stacking fault. According to the ZnSe nanowire and the preparation method and the application thereof, ZnSe powder servers as pre-reaction materials, gold serves as a catalyst, and the ZnSe nanowire growing is obtained through growth on FTO conductive glass or a SnO2 single crystal substrate by a chemical vapor deposition method. The nanowire can be used for constructing solar batteries, photodetectors, nanometer lasers and the like, performance is especially good in the aspect of hydrogen production through solar photoelectrocatalysis decomposition of water, and good application prospects are achieved.
Owner:THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA

ZnSe-GaP solid solution nanometer material and preparation method thereof

The present invention discloses a ZnSe-GaP solid solution nanometer material and a preparation method thereof. According to the present invention, the prepared ZnSe-GaP solid solution nanometer material has the linear shape, has the diameter of 50-500 nm, and has the length of 5 [mu]m-5 mm; the preparation method comprises: adding zinc selenide, gallium phosphide, selenium powder and zinc powder to a three-temperature-zone tubular furnace, and growing on a graphite substrate by using a CVD method so as to obtain the ZnSe-GaP solid solution nanometer material; and the prepared ZnSe-GaP solid solution nanometer material has characteristics of good crystal, large aspect ratio and uniform size, and the preparation method has characteristics of simple process, easy process parameter control and simple operation, is suitable for large area preparation, and is used for preparation of nanometer optoelectronic devices.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Method for preparing ZnO nano-rod array by pulse electromagnetic field

The invention discloses a method for preparing a ZnO nano-rod array by a pulse electromagnetic field. The method provided by the invention solves the problem that the existing ZnO nano-rod array has a small length-diameter ratio and low verticality. The method provided by the invention comprises the following steps of putting fluorine-doped tin oxide (FTO) electrically-conductive glass into a supersonic wave washer, carrying out cleaning, dropwisely adding a mixed solution of zinc acetate, ethanolamine and ethylene glycol monomethyl ether on the cleaned FTO electrically-conductive glass, uniformly spreading the mixed solution on the cleaned FTO electrically-conductive glass by a spin coater, putting the cleaned FTO electrically-conductive glass coated with the mixed solution into a tube-type heating furnace, carrying out heating to obtain a ZnO film, dissolving zinc chloride into deionized water to obtain a precursor solution, adjusting a pH value of the precursor solution by ammonia water, putting the FTO electrically-conductive glass coated with the ZnO film into a reactor, pouring the precursor solution into the reactor, carrying out pulse electromagnetic field treatment on thereaction system in the reactor by a pulse electromagnetic field generation device, then transferring the reactor into an incubator, carrying out a hydro-thermal reaction process, washing off white precipitates on the surface of the FTO electrically-conductive glass by deionized water, putting the FTO electrically-conductive glass obtained by the previous step into a constant-temperature dry box and carrying out drying to obtain the ZnO nano-rod array. The method provided by the invention does not adopt a surfactant, and has simple processes, low energy consumption and no pollution.
Owner:LIAONING UNIVERSITY OF TECHNOLOGY

Method for preparing micro-nano fiber membrane withcore-shell structurethrough electrostatic spinning by Janus parallel needle

The invention relates to a method for preparing a micro-nano fiber membrane with a core-shell structure through electrostatic spinning by a Janus parallel needle. The tail section of the needle comprises double channels, the double channels at the front section are combined to form a single channel, and therefore, two solutions are mixed for further preparation ofthe fiber with the core-shell structure. The electrostatic spinning process comprises following steps: macromolecules are dissolved in a solvent and stirred until the macromolecules are completely dissolved, or the macromolecules areheat to be molten, and spinning precursor solutions are obtained; two different macromolecule solutions or melts are extracted by injectors respectively and connected to the double channel ends of theJanus parallel needle through latex tubes; a positive pole of a high-voltage power supply is connected to the single channel section of the Janus parallel needle, and a negative pole is connected toa receiving device; spinning parameters are set, the power supply is switched on, the spinning is performed for a period of time, and the micro-nano fiber membrane with the core-shell structure is obtained. The preparation method is simple, the core-shell structure is controllable, the cost is lower, and the membrane can be applied to the fields of filtration and adsorption, drug loading, tissue engineering scaffolds and the like.
Owner:JILIN UNIV

Graphite carbon nitride nanotube array photoelectrode, preparation method of array photoelectrode and application

The invention discloses a graphite carbon nitride nanotube array photoelectrode, a preparation method of the array photoelectrode and application in solar energy photoelectrochemistry decomposition water generation oxygen serving as a photo-anode. The diameters and lengths of graphite carbon nitride nanotubes in the graphite carbon nitride nanotube array photoelectrode can be adjusted, the diameter range is 20nm-170nm, and the length range is 400nm-2500nm. The graphite carbon nitride nanotube array photoelectrode is obtained by high-temperature condensation polymerization in an inert atmosphere with anodized aluminum supported by a conductive substrate as a template and with concentrated cyanamide solutions as a precursor. The graphite carbon nitride nanotube array photoelectrode has a large specific area and more surface activity sites, serves as the photo-anode to be applied in solar energy photoelectrochemistry decomposition water generation oxygen, and has excellent performance.
Owner:THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA

Ga2O3 nanowire array film and preparation method thereof

The invention relates to the technical field of nanometer photoelectric detection, nanometer high-temperature gas-sensitive detectors, semiconductor nanometer materials and nanometer technologies, andconcretely relates to a Ga2O3 nanowire array film and a preparation method thereof. The prepared Ga2O3 nanowire array film can be used for a nano photoelectric detector, a nano high-temperature gas-sensitive detector or other nano optoelectronic devices. The film is an epitaxially grown one-dimensional Ga2O3 nanowire array with a fixed inclination angle. The diameter of a single gallium oxide nanowire in the Ga2O3 nanowire array is 50-100 nm, the length of the nanowire is 5-50 [mu]m, and a gallium oxide nanosheet is generated on the surface of the nanowire through autocatalysis. The Ga2O3 nanowire array film is prepared by adopting a one-step method, the size and the array density of the prepared Ga2O3 nanowire array film are controllable, and the Ga2O3 nanowire array film has the advantages of being simple in technological process, convenient to implement, good in repeatability, capable of being prepared on a large scale and the like.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Steel air-ethanol ionic oxynitrocarburizing process

The invention provides an air-alcohol ion nitrocarburizing and oxidizing process for steel, which relates to the surface chemical heat treatment process for steel, and is applicable for the surface reinforcing of carbon steels, alloy structural steels and die and tool steels. The invention comprises such procedures as: cleaning, drying and placing a tempered work piece on a cathode disc of an ion nitriding furnace, vacuuming the inside of the ion nitriding furnace, inputting an adjustable DC voltage, inputting air and alcohol in flow proportions and meanwhile heating, keeping temperature, cooling in the furnace, and tapping. The invention uses no ammonia or nitrogen hydrogen, reduces cost, and reduces environmental pollution as well as hidden problem concerning safety due to hi-pressure gas bottle and combustibility and explosivity of hydrogen, and improves the wear resistance and hardness of work pieces.
Owner:CHONGQING UNIV

A gallium oxide heterojunction structure and its growth method and special device

The invention belongs to the technical field of semiconductor materials and nanometer, specifically relates to a gallium oxide heterogeneous structure and a growth method thereof, and particularly relates to a method and a special device for a gallium oxide heterogeneous structure with a pseudo quartic symmetry nanometer size formed by beta-Ga2O3 and k-Ga2O3. The gallium oxide heterojunction comprises a beta-Ga2O3 nanowire trunk and a k-Ga2O3 nanorod on the surface of the beta-Ga2O3 nanometer linear trunk, wherein the length of the beta-Ga2O3 nanowire is 5-100 mu m and the diameter is 50-1000nm; the size of the k-Ga2O3 nanorod is 50-200nm and is distributed on the nanowire surface in a mode of pseudo quartic symmetry. The method adopted in the invention can be used for accurately controlling the temperature and ammonia gas flow in a deposition area in the process of chemical vapor deposition (CVD), so as to spontaneously form a k-Ga2O3 / beta-Ga2O3 heterogeneous structure, and the obtained k-Ga2O3 is a new crystal structure in a gallium oxide system and has rhombic symmetry. The prepared k-Ga2O3 / beta-Ga2O3 heterogeneous structure has extremely strong cathode ray fluorescence property in an ultraviolet region, has the discrete characteristic of luminescence and is suitable for serving as an ultraviolet light electricity detector and suitable for hydrogen production through photocatalytic water splitting.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Preparation method of raspberry-shaped SiCxNyOz microspheres converted by polysilazane

The invention discloses a preparation method of raspberry-shaped SiCxNyOz microspheres converted by polysilazane, and the method comprises the following steps: 1, using divinyl benzene, polysilazane containing carbon-carbon double bonds, 2,2'-azodiisobutyronitrile and acetonitrile to prepare a mixed liquid; 2, carrying out heating reaction on the mixed liquid, repeatedly conducting washing, and carrying out vacuum filtration and vacuum drying to obtain initial powder; and 3, carrying out sintering treatment under the protection of an inert atmosphere, and conducting cooling to room temperature to obtain the raspberry-shaped SiCxNyOz microspheres. The raspberry-shaped SiCxNyOz microspheres with a large number of nanoscale protrusions formed on the surfaces and a secondary micro-nano structure are obtained by controlling the proportion of solute, an initiator and solvent, the heating reaction temperature and the sintering temperature rise rate, and the raspberry-shaped SiCxNyOz microspheres have a large number of nanoscale interfaces and are beneficial to loss and absorption of electromagnetic wave energy, so that the raspberry-shaped SiCxNyOz microspheres have good wave-absorbing performance and is expected to be applied to the civil or military field as a wave-absorbing agent or a wave-absorbing coating.
Owner:NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH

Colloidal silicon nanocrystal with high fluorescence quantum yield as well as preparation method and application of colloidal silicon nanocrystal

The invention relates to the field of a preparation technology of a functional nano material and application of the functional nano material to a photoelectric device, in particular to preparation of colloidal silicon nanocrystals (c-Si NCs) with high fluorescence quantum yield and application of the colloidal silicon nanocrystals (c-Si NCs) to an OLED (Organic Light Emitting Diode). According to the method, a block monocrystalline silicon wafer, an organic solvent and a hydrofluoric acid (HF) solution are mainly used for being mixed, the c-SiNCs with high fluorescence quantum efficiency, good surface functionalization and uniform dispersion are generated in one step through femtosecond laser liquid phase ablation, used consumables are low in cost, used reagents are non-toxic and free of strong corrosivity, and the c-SiNCs can be applied to the field of fluorescence imaging. The prepared c-Si NCs has the characteristics of no toxicity, high fluorescence quantum efficiency (as high as 78.5%), easiness in regulation and control of size distribution and light-emitting wavelength and the like. A c-Si NCs film is prepared from the prepared c-Si NCs solution through a one-step spin-coating method and applied to an OLED, and the external quantum efficiency can reach 7.2%. The process does not need complex chemical modification, is simple and easy to implement, has good repeatability, has good stability in amplification experiments, and is wide in industrial application prospect.
Owner:SHANGHAI UNIV OF ENG SCI

Preparation and application of a three-dimensional structure niwp electrocatalyst material

The invention relates to a preparation and application of a NiWP electric catalyst material with a three-dimensional structure, which belongs to the technical field of clean energy materials. The preparation comprises the following steps: preprocessing foam metal (cathode matrix material) and a pure nickel sheet (anode material) to remove oxides and impurities on the surface; respectively adding a nickel salt and tungsten salt into distilled water according to a ratio, uniformly dissolving in a magnetic stirrer, adding a complexing agent, stirring and dissolving the complexing agent in a tungsten salt-containing solution, mixing the two solutions, then adding a phosphorus salt, uniformly stirring, and finally adjusting a pH value of plating solution by utilizing sulfuric acid and ammonia water; and performing the electric precipitation under a given current density and temperature by adopting a direct-current voltage stabilizing power supply, after a given time of precipitation, cleaning the surface of a test sample by utilizing deionized water, and drying at a room temperature to obtain the NiWP electric catalyst with the three-dimensional structure. The electric catalyst prepared by using the method can effectively reduce overpotential of water electrolysis hydrogen evolution reaction and oxygen evolution reaction by virtue of electrochemical test, and has good circulating stability. The preparation method is simple in process procedures, easy in operation and good in application prospect.
Owner:BEIJING UNIV OF TECH

Processing technology flow of bean curd semi-finished products

The invention discloses a processing technology flow of bean curd semi-finished products. The processing technology flow sequentially comprises the following steps of cleaning, marinating, vibrating for flat spreading, baking, vibrating for flat spreading, marinating, vibrating for flat spreading, baking and discharging. The method disclosed by the invention is simple in process, the bean curd semi-finished products are convenient to make, automatic production can be realized, all the technological parameters are convenient to regulate, and the processing technology flow can be widely appliedto processing of marinated foods.
Owner:湖南乡乡嘴食品有限公司

A method for preparing micro-nanofibrous membranes with core-shell structure by electrospinning with janus parallel needles

The invention relates to a method for preparing micro-nano fiber membranes with a core-shell structure by electrospinning Janus parallel needles. The end section of the needles is composed of double channels, and the double channels in the front section are combined into a single channel, so as to achieve further mixing of the two solutions. The purpose of obtaining core-shell structure fibers. The electrospinning process includes the following steps: dissolve the polymer in a solvent and stir until it is completely dissolved, or heat and melt to obtain a spinning precursor; use a syringe to draw two different polymer solutions or melts and connect them to Janus parallel needles through latex tubes The dual-channel end of the high-voltage power supply is connected to the single-channel section of the Janus parallel needle, and the negative electrode is connected to the receiving device; the spinning parameters are set, the power is turned on, and the nanofiber membrane with the core-shell structure is obtained by spinning for a period of time. The preparation method of the present invention is simple, the core-shell structure is controllable, and the cost is low, and can be used in the fields of filtration adsorption, drug loading, tissue engineering support and the like.
Owner:JILIN UNIV

Method for improving tungsten-base gold-plating bond strength

The invention relates to a method for improving the gold-plating bond strength of a tungsten metal surface, and belongs to the field of the surface modification of metal materials. In the method, the problems of dropping and delamination of plated gold on surfaces of tungsten materials are solved. The method comprises the following steps of: removing oxides on the surface of a tungsten spiral line before electroplating; electroplating copper at the temperature of between 20 and 60 DEG C and under a condition that the pH value is between 0.6 and 1.2 and a condition that the current density is between 0.1 and 0.3 A / dm<2> for 15 to 120 seconds, wherein copper layer electroplate liquid comprises 170 to 210 g / L of anhydrous cupric sulfate, 35 to 60 g / L of sulfuric acid and the balance of water, and the pH value is regulated by the sulfuric acid and sodium hydroxide; and electroplating the gold at the temperature of between 20 and 35 DEG C under a condition that the pH value is between 8 and 11 and a condition that the current density is between 0.4 and 0.6 A / dm<2> for 150 to 300 seconds, wherein gold-plating liquid comprises 5 to 8 g / L of gold sodium sulfite, 30 to 40 g / L of anhydrous sodium sulfite and the balance of water, and the pH value is regulated by the sulfuric acid and the sodium hydroxide. In the method, gold-plating samples are subjected to heat treatment in a hydrogen furnace at the temperature of between 950 and 1,000 DEG C for 30 minutes, and gold-plating layers are not dropped.
Owner:BEIJING UNIV OF TECH
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