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39results about How to "Process parameters are easy to adjust" patented technology

Gallium oxide heterogeneous structure as well as growth method and special device thereof

The invention belongs to the technical field of semiconductor materials and nanometer, specifically relates to a gallium oxide heterogeneous structure and a growth method thereof, and particularly relates to a method and a special device for a gallium oxide heterogeneous structure with a pseudo quartic symmetry nanometer size formed by beta-Ga2O3 and k-Ga2O3. The gallium oxide heterojunction comprises a beta-Ga2O3 nanowire trunk and a k-Ga2O3 nanorod on the surface of the beta-Ga2O3 nanometer linear trunk, wherein the length of the beta-Ga2O3 nanowire is 5-100 mu m and the diameter is 50-1000nm; the size of the k-Ga2O3 nanorod is 50-200nm and is distributed on the nanowire surface in a mode of pseudo quartic symmetry. The method adopted in the invention can be used for accurately controlling the temperature and ammonia gas flow in a deposition area in the process of chemical vapor deposition (CVD), so as to spontaneously form a k-Ga2O3 / beta-Ga2O3 heterogeneous structure, and the obtained k-Ga2O3 is a new crystal structure in a gallium oxide system and has rhombic symmetry. The prepared k-Ga2O3 / beta-Ga2O3 heterogeneous structure has extremely strong cathode ray fluorescence property in an ultraviolet region, has the discrete characteristic of luminescence and is suitable for serving as an ultraviolet light electricity detector and suitable for hydrogen production through photocatalytic water splitting.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Method for preparing Al mixed with ZnO nanosheet array by adopting pulsed electromagnetic field

The invention relates to a method for preparing Al mixed with ZnO nanosheet array by adopting a pulsed electromagnetic field, which is as follows: an FTO conductive sheet glass is placed in an ultrasonic cleaner for cleaning; the mixed solution I of zinc acetate, ethanol amine and ethylene glycol monomethyl ether is dripped on the conductive sheet glass, and is uniformly coated through a spin coater and heat treated to form a ZnO film thereon; the FTO conductive sheet glass coated with the ZnO film is put into a reaction kettle, the mixed solution II formed by aluminium nitrate, zinc nitrate and hexamethylene tetramine as well as deionized water is filled into the reaction kettle, the pulsed electromagnetic field treatment is applied to the reaction system in the reaction kettle, the kettle is moved to a constant temperature oven for hydrothermal reaction after the treatment, and the sediment on the surface of the glass is washed and dried after the hydrothermal reaction, so as to obtain the Al mixed with ZnO nanosheet array. The method is simple to operate, has low energy consumption, enables the orientation of the nanosheets to be identical, has higher verticality, enables the nanosheets to be neatly arrayed, has big specific surface area, facilitates electron transport when serving as the photoanode, and improves the efficiency of the dye sensitized solar cell.
Owner:LIAONING UNIVERSITY OF TECHNOLOGY

Preparation method of high-heat-conduction aluminum nitride thick film

The invention relates to a preparation method of a high-heat-conduction aluminum nitride thick film, belongs to the technical field of surface coating preparation and application and mainly solves the technical problems that an aluminum nitride thick film can not be prepared, the deposition speed is low, commercialization is difficult to realize and the like in the prior art. According to the method, the aluminum nitride thick film is deposited through arc ion plating, the nitrogen/aluminum ratio in the film is uniform, the thickness of the prepared AlN high-heat-conduction film can be up to 3-10mu m, and a large bonding force can be generated between the film and a substrate, wherein the involved substrate material can be metal such as stainless steel, iron, copper, aluminum and the like, or can be an inorganic non-metal material such as ceramic, glass and the like, or can be a high-molecular organic polymer such as epoxy resin, polyimide and the like. The preparation method comprises the following steps: performing surface treatment on the substrate material; and by selecting pure aluminum as a cathode target material and using pure nitrogen gas as reacting gas, forming the AlN high-heat-conduction film through reaction between aluminum ions obtained by ionization and the nitrogen gas, wherein the purity of the aluminum target material is 99.99%, and the purity of the nitrogen gas is 99.999%. Thus, the method is applicable to multiple fields such as electronic measuring instruments, computer equipment, measurement and control systems, airplanes, precision weapons and the like.
Owner:辽宁法库陶瓷工程技术研究中心

Method for preparing ZnO nano-rod array by pulse electromagnetic field

The invention discloses a method for preparing a ZnO nano-rod array by a pulse electromagnetic field. The method provided by the invention solves the problem that the existing ZnO nano-rod array has a small length-diameter ratio and low verticality. The method provided by the invention comprises the following steps of putting fluorine-doped tin oxide (FTO) electrically-conductive glass into a supersonic wave washer, carrying out cleaning, dropwisely adding a mixed solution of zinc acetate, ethanolamine and ethylene glycol monomethyl ether on the cleaned FTO electrically-conductive glass, uniformly spreading the mixed solution on the cleaned FTO electrically-conductive glass by a spin coater, putting the cleaned FTO electrically-conductive glass coated with the mixed solution into a tube-type heating furnace, carrying out heating to obtain a ZnO film, dissolving zinc chloride into deionized water to obtain a precursor solution, adjusting a pH value of the precursor solution by ammonia water, putting the FTO electrically-conductive glass coated with the ZnO film into a reactor, pouring the precursor solution into the reactor, carrying out pulse electromagnetic field treatment on thereaction system in the reactor by a pulse electromagnetic field generation device, then transferring the reactor into an incubator, carrying out a hydro-thermal reaction process, washing off white precipitates on the surface of the FTO electrically-conductive glass by deionized water, putting the FTO electrically-conductive glass obtained by the previous step into a constant-temperature dry box and carrying out drying to obtain the ZnO nano-rod array. The method provided by the invention does not adopt a surfactant, and has simple processes, low energy consumption and no pollution.
Owner:LIAONING UNIVERSITY OF TECHNOLOGY

Method for preparing micro-nano fiber membrane withcore-shell structurethrough electrostatic spinning by Janus parallel needle

The invention relates to a method for preparing a micro-nano fiber membrane with a core-shell structure through electrostatic spinning by a Janus parallel needle. The tail section of the needle comprises double channels, the double channels at the front section are combined to form a single channel, and therefore, two solutions are mixed for further preparation ofthe fiber with the core-shell structure. The electrostatic spinning process comprises following steps: macromolecules are dissolved in a solvent and stirred until the macromolecules are completely dissolved, or the macromolecules areheat to be molten, and spinning precursor solutions are obtained; two different macromolecule solutions or melts are extracted by injectors respectively and connected to the double channel ends of theJanus parallel needle through latex tubes; a positive pole of a high-voltage power supply is connected to the single channel section of the Janus parallel needle, and a negative pole is connected toa receiving device; spinning parameters are set, the power supply is switched on, the spinning is performed for a period of time, and the micro-nano fiber membrane with the core-shell structure is obtained. The preparation method is simple, the core-shell structure is controllable, the cost is lower, and the membrane can be applied to the fields of filtration and adsorption, drug loading, tissue engineering scaffolds and the like.
Owner:JILIN UNIV

A gallium oxide heterojunction structure and its growth method and special device

The invention belongs to the technical field of semiconductor materials and nanometer, specifically relates to a gallium oxide heterogeneous structure and a growth method thereof, and particularly relates to a method and a special device for a gallium oxide heterogeneous structure with a pseudo quartic symmetry nanometer size formed by beta-Ga2O3 and k-Ga2O3. The gallium oxide heterojunction comprises a beta-Ga2O3 nanowire trunk and a k-Ga2O3 nanorod on the surface of the beta-Ga2O3 nanometer linear trunk, wherein the length of the beta-Ga2O3 nanowire is 5-100 mu m and the diameter is 50-1000nm; the size of the k-Ga2O3 nanorod is 50-200nm and is distributed on the nanowire surface in a mode of pseudo quartic symmetry. The method adopted in the invention can be used for accurately controlling the temperature and ammonia gas flow in a deposition area in the process of chemical vapor deposition (CVD), so as to spontaneously form a k-Ga2O3 / beta-Ga2O3 heterogeneous structure, and the obtained k-Ga2O3 is a new crystal structure in a gallium oxide system and has rhombic symmetry. The prepared k-Ga2O3 / beta-Ga2O3 heterogeneous structure has extremely strong cathode ray fluorescence property in an ultraviolet region, has the discrete characteristic of luminescence and is suitable for serving as an ultraviolet light electricity detector and suitable for hydrogen production through photocatalytic water splitting.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Preparation method of raspberry-shaped SiCxNyOz microspheres converted by polysilazane

The invention discloses a preparation method of raspberry-shaped SiCxNyOz microspheres converted by polysilazane, and the method comprises the following steps: 1, using divinyl benzene, polysilazane containing carbon-carbon double bonds, 2,2'-azodiisobutyronitrile and acetonitrile to prepare a mixed liquid; 2, carrying out heating reaction on the mixed liquid, repeatedly conducting washing, and carrying out vacuum filtration and vacuum drying to obtain initial powder; and 3, carrying out sintering treatment under the protection of an inert atmosphere, and conducting cooling to room temperature to obtain the raspberry-shaped SiCxNyOz microspheres. The raspberry-shaped SiCxNyOz microspheres with a large number of nanoscale protrusions formed on the surfaces and a secondary micro-nano structure are obtained by controlling the proportion of solute, an initiator and solvent, the heating reaction temperature and the sintering temperature rise rate, and the raspberry-shaped SiCxNyOz microspheres have a large number of nanoscale interfaces and are beneficial to loss and absorption of electromagnetic wave energy, so that the raspberry-shaped SiCxNyOz microspheres have good wave-absorbing performance and is expected to be applied to the civil or military field as a wave-absorbing agent or a wave-absorbing coating.
Owner:NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH

Colloidal silicon nanocrystal with high fluorescence quantum yield as well as preparation method and application of colloidal silicon nanocrystal

The invention relates to the field of a preparation technology of a functional nano material and application of the functional nano material to a photoelectric device, in particular to preparation of colloidal silicon nanocrystals (c-Si NCs) with high fluorescence quantum yield and application of the colloidal silicon nanocrystals (c-Si NCs) to an OLED (Organic Light Emitting Diode). According to the method, a block monocrystalline silicon wafer, an organic solvent and a hydrofluoric acid (HF) solution are mainly used for being mixed, the c-SiNCs with high fluorescence quantum efficiency, good surface functionalization and uniform dispersion are generated in one step through femtosecond laser liquid phase ablation, used consumables are low in cost, used reagents are non-toxic and free of strong corrosivity, and the c-SiNCs can be applied to the field of fluorescence imaging. The prepared c-Si NCs has the characteristics of no toxicity, high fluorescence quantum efficiency (as high as 78.5%), easiness in regulation and control of size distribution and light-emitting wavelength and the like. A c-Si NCs film is prepared from the prepared c-Si NCs solution through a one-step spin-coating method and applied to an OLED, and the external quantum efficiency can reach 7.2%. The process does not need complex chemical modification, is simple and easy to implement, has good repeatability, has good stability in amplification experiments, and is wide in industrial application prospect.
Owner:SHANGHAI UNIV OF ENG SCI

Preparation and application of a three-dimensional structure niwp electrocatalyst material

The invention relates to a preparation and application of a NiWP electric catalyst material with a three-dimensional structure, which belongs to the technical field of clean energy materials. The preparation comprises the following steps: preprocessing foam metal (cathode matrix material) and a pure nickel sheet (anode material) to remove oxides and impurities on the surface; respectively adding a nickel salt and tungsten salt into distilled water according to a ratio, uniformly dissolving in a magnetic stirrer, adding a complexing agent, stirring and dissolving the complexing agent in a tungsten salt-containing solution, mixing the two solutions, then adding a phosphorus salt, uniformly stirring, and finally adjusting a pH value of plating solution by utilizing sulfuric acid and ammonia water; and performing the electric precipitation under a given current density and temperature by adopting a direct-current voltage stabilizing power supply, after a given time of precipitation, cleaning the surface of a test sample by utilizing deionized water, and drying at a room temperature to obtain the NiWP electric catalyst with the three-dimensional structure. The electric catalyst prepared by using the method can effectively reduce overpotential of water electrolysis hydrogen evolution reaction and oxygen evolution reaction by virtue of electrochemical test, and has good circulating stability. The preparation method is simple in process procedures, easy in operation and good in application prospect.
Owner:BEIJING UNIV OF TECH

A method for preparing micro-nanofibrous membranes with core-shell structure by electrospinning with janus parallel needles

The invention relates to a method for preparing micro-nano fiber membranes with a core-shell structure by electrospinning Janus parallel needles. The end section of the needles is composed of double channels, and the double channels in the front section are combined into a single channel, so as to achieve further mixing of the two solutions. The purpose of obtaining core-shell structure fibers. The electrospinning process includes the following steps: dissolve the polymer in a solvent and stir until it is completely dissolved, or heat and melt to obtain a spinning precursor; use a syringe to draw two different polymer solutions or melts and connect them to Janus parallel needles through latex tubes The dual-channel end of the high-voltage power supply is connected to the single-channel section of the Janus parallel needle, and the negative electrode is connected to the receiving device; the spinning parameters are set, the power is turned on, and the nanofiber membrane with the core-shell structure is obtained by spinning for a period of time. The preparation method of the present invention is simple, the core-shell structure is controllable, and the cost is low, and can be used in the fields of filtration adsorption, drug loading, tissue engineering support and the like.
Owner:JILIN UNIV

Method for improving tungsten-base gold-plating bond strength

The invention relates to a method for improving the gold-plating bond strength of a tungsten metal surface, and belongs to the field of the surface modification of metal materials. In the method, the problems of dropping and delamination of plated gold on surfaces of tungsten materials are solved. The method comprises the following steps of: removing oxides on the surface of a tungsten spiral line before electroplating; electroplating copper at the temperature of between 20 and 60 DEG C and under a condition that the pH value is between 0.6 and 1.2 and a condition that the current density is between 0.1 and 0.3 A / dm<2> for 15 to 120 seconds, wherein copper layer electroplate liquid comprises 170 to 210 g / L of anhydrous cupric sulfate, 35 to 60 g / L of sulfuric acid and the balance of water, and the pH value is regulated by the sulfuric acid and sodium hydroxide; and electroplating the gold at the temperature of between 20 and 35 DEG C under a condition that the pH value is between 8 and 11 and a condition that the current density is between 0.4 and 0.6 A / dm<2> for 150 to 300 seconds, wherein gold-plating liquid comprises 5 to 8 g / L of gold sodium sulfite, 30 to 40 g / L of anhydrous sodium sulfite and the balance of water, and the pH value is regulated by the sulfuric acid and the sodium hydroxide. In the method, gold-plating samples are subjected to heat treatment in a hydrogen furnace at the temperature of between 950 and 1,000 DEG C for 30 minutes, and gold-plating layers are not dropped.
Owner:BEIJING UNIV OF TECH
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