39results about How to "Process parameters are easy to adjust" patented technology

The invention discloses a manufacturing technology of lithium metaphosphate, which comprises the following steps: placing the raw material of industrial lithium hydroxide or fine lithium hydroxide in the reaction container; adding the deionized water and active carbon; stirring evenly; adding the deionized water to dilute the solution at 1.05-1.10 specific gravity; stewing; filtering the solution in another container to obtain heavy fine lithium hydroxide solution; adding phosphate slowly until the pH value is 2.8-3; stirring; obtaining the lithium phosphate solution; adding active carbon and precipitant to remove impurity; adding the deionized water until the specific gravity is 1.05-1.10; heating; stewing; filtering the solution in another container to obtain the concentrated lithium phosphate solution; shifting the material in the spray drying tower to compress into calcium metaphosphate after filtering. The invention simplifies the manufacturing technology and reduces the cost, which improves the production quality and stability.

The present invention discloses a ZnSe-GaP solid solution nanometer material and a preparation method thereof. According to the present invention, the prepared ZnSe-GaP solid solution nanometer material has the linear shape, has the diameter of 50-500 nm, and has the length of 5 [mu]m-5 mm; the preparation method comprises: adding zinc selenide, gallium phosphide, selenium powder and zinc powder to a three-temperature-zone tubular furnace, and growing on a graphite substrate by using a CVD method so as to obtain the ZnSe-GaP solid solution nanometer material; and the prepared ZnSe-GaP solid solution nanometer material has characteristics of good crystal, large aspect ratio and uniform size, and the preparation method has characteristics of simple process, easy process parameter control and simple operation, is suitable for large area preparation, and is used for preparation of nanometer optoelectronic devices.

The invention relates to the field of nano photoelectric detection, nano high temperature gas sensitive detector, semiconductor nano material and nano technology, specifically a Ga 2 o 3 Nanowire array thin film and preparation method thereof, prepared Ga 2 o 3 The nanowire array thin film can be used for nano photodetectors, nano high temperature gas sensitive detectors or other nano optoelectronic devices. The film is epitaxially grown one-dimensional Ga with a fixed tilt angle. 2 o 3 array of nanowires. Ga 2 o 3 The diameter of a single gallium oxide nanowire in the nanowire array is 50-100 nanometers, the length of the nanowire is 5-50 microns, and gallium oxide nanosheets are self-catalyzed on the surface of the nanowire. The Ga 2 o 3 The nanowire array thin film is prepared by one-step method, and the prepared Ga 2 o 3 The nanowire array film size and array density are controllable, and has the advantages of simple process flow, convenient implementation, good repeatability, and large-scale preparation.

The invention belongs to the technical field of semiconductor materials and nanometer, specifically relates to a gallium oxide heterogeneous structure and a growth method thereof, and particularly relates to a method and a special device for a gallium oxide heterogeneous structure with a pseudo quartic symmetry nanometer size formed by beta-Ga2O3 and k-Ga2O3. The gallium oxide heterojunction comprises a beta-Ga2O3 nanowire trunk and a k-Ga2O3 nanorod on the surface of the beta-Ga2O3 nanometer linear trunk, wherein the length of the beta-Ga2O3 nanowire is 5-100 mu m and the diameter is 50-1000nm; the size of the k-Ga2O3 nanorod is 50-200nm and is distributed on the nanowire surface in a mode of pseudo quartic symmetry. The method adopted in the invention can be used for accurately controlling the temperature and ammonia gas flow in a deposition area in the process of chemical vapor deposition (CVD), so as to spontaneously form a k-Ga2O3 / beta-Ga2O3 heterogeneous structure, and the obtained k-Ga2O3 is a new crystal structure in a gallium oxide system and has rhombic symmetry. The prepared k-Ga2O3 / beta-Ga2O3 heterogeneous structure has extremely strong cathode ray fluorescence property in an ultraviolet region, has the discrete characteristic of luminescence and is suitable for serving as an ultraviolet light electricity detector and suitable for hydrogen production through photocatalytic water splitting.

A method for preparing anatase-type nano-titanium dioxide in a pulsed electromagnetic field comprises diluting butyl titanate with absolute ethanol to obtain a butyl titanate dilution; adjusting the pH value of the ethanol aqueous solution with acetic acid; combining the ethanol aqueous solution adjusted to pH Add butyl titanate diluent, apply pulsed electromagnetic field treatment to the reaction system while adding butyl titanate diluent, and obtain a mixed solution; put it in a vacuum drying oven to dry, and grind the obtained solid particles into powder, put it into a muffle In the furnace, the anatase nano-TiO2 powder is obtained by roasting. The advantages are: the agglomeration of the hydrolyzate particles is suppressed by the pulsed electromagnetic field, and the particle size is effectively reduced. Therefore, no surfactant is needed, the problem of difficult separation of the product and the additive is avoided, and impurities are not brought into the reaction system. The anatase titanium dioxide has the advantages of small particle size, uniform particle size and good dispersibility.

The invention discloses a graphite carbon nitride nanotube array photoelectrode, a preparation method of the array photoelectrode and application in solar energy photoelectrochemistry decomposition water generation oxygen serving as a photo-anode. The diameters and lengths of graphite carbon nitride nanotubes in the graphite carbon nitride nanotube array photoelectrode can be adjusted, the diameter range is 20nm-170nm, and the length range is 400nm-2500nm. The graphite carbon nitride nanotube array photoelectrode is obtained by high-temperature condensation polymerization in an inert atmosphere with anodized aluminum supported by a conductive substrate as a template and with concentrated cyanamide solutions as a precursor. The graphite carbon nitride nanotube array photoelectrode has a large specific area and more surface activity sites, serves as the photo-anode to be applied in solar energy photoelectrochemistry decomposition water generation oxygen, and has excellent performance.

This invention relates to a new type of calcination technology characterizing in applying a mode of inner burning and outer burning, which applies an exclusive calcination method, namely, combination of back flow and forward flow and a coil pipe penetrating thermal medium is set in a kiln to get a new technology of mixing inner and outer calcination and guarantee fully heat exchange of the substance and the hot smoke, so that the calcination temperature can be controlled to produce gesso meeting the national standard, meanwhile, circulation pipelines are increased to the device so as to increase the thermal efficiency of calcinations and multi-kind fuel can be applied in the production process to adjust technical parameters easily.

The invention relates to a preparation and application of a NiWP electric catalyst material with a three-dimensional structure, which belongs to the technical field of clean energy materials. The preparation comprises the following steps: preprocessing foam metal (cathode matrix material) and a pure nickel sheet (anode material) to remove oxides and impurities on the surface; respectively adding a nickel salt and tungsten salt into distilled water according to a ratio, uniformly dissolving in a magnetic stirrer, adding a complexing agent, stirring and dissolving the complexing agent in a tungsten salt-containing solution, mixing the two solutions, then adding a phosphorus salt, uniformly stirring, and finally adjusting a pH value of plating solution by utilizing sulfuric acid and ammonia water; and performing the electric precipitation under a given current density and temperature by adopting a direct-current voltage stabilizing power supply, after a given time of precipitation, cleaning the surface of a test sample by utilizing deionized water, and drying at a room temperature to obtain the NiWP electric catalyst with the three-dimensional structure. The electric catalyst prepared by using the method can effectively reduce overpotential of water electrolysis hydrogen evolution reaction and oxygen evolution reaction by virtue of electrochemical test, and has good circulating stability. The preparation method is simple in process procedures, easy in operation and good in application prospect.

The invention relates to a method for preparing micro-nano fiber membranes with a core-shell structure by electrospinning Janus parallel needles. The end section of the needles is composed of double channels, and the double channels in the front section are combined into a single channel, so as to achieve further mixing of the two solutions. The purpose of obtaining core-shell structure fibers. The electrospinning process includes the following steps: dissolve the polymer in a solvent and stir until it is completely dissolved, or heat and melt to obtain a spinning precursor; use a syringe to draw two different polymer solutions or melts and connect them to Janus parallel needles through latex tubes The dual-channel end of the high-voltage power supply is connected to the single-channel section of the Janus parallel needle, and the negative electrode is connected to the receiving device; the spinning parameters are set, the power is turned on, and the nanofiber membrane with the core-shell structure is obtained by spinning for a period of time. The preparation method of the present invention is simple, the core-shell structure is controllable, and the cost is low, and can be used in the fields of filtration adsorption, drug loading, tissue engineering support and the like.

The invention relates to a method for improving the gold-plating bond strength of a tungsten metal surface, and belongs to the field of the surface modification of metal materials. In the method, the problems of dropping and delamination of plated gold on surfaces of tungsten materials are solved. The method comprises the following steps of: removing oxides on the surface of a tungsten spiral line before electroplating; electroplating copper at the temperature of between 20 and 60 DEG C and under a condition that the pH value is between 0.6 and 1.2 and a condition that the current density is between 0.1 and 0.3 A / dm<2> for 15 to 120 seconds, wherein copper layer electroplate liquid comprises 170 to 210 g / L of anhydrous cupric sulfate, 35 to 60 g / L of sulfuric acid and the balance of water, and the pH value is regulated by the sulfuric acid and sodium hydroxide; and electroplating the gold at the temperature of between 20 and 35 DEG C under a condition that the pH value is between 8 and 11 and a condition that the current density is between 0.4 and 0.6 A / dm<2> for 150 to 300 seconds, wherein gold-plating liquid comprises 5 to 8 g / L of gold sodium sulfite, 30 to 40 g / L of anhydrous sodium sulfite and the balance of water, and the pH value is regulated by the sulfuric acid and the sodium hydroxide. In the method, gold-plating samples are subjected to heat treatment in a hydrogen furnace at the temperature of between 950 and 1,000 DEG C for 30 minutes, and gold-plating layers are not dropped.

The invention relates to a ZnSe nanowire and a preparation method and an application thereof. The ZnSe nanowire is grown along the crystal orientation of the <100>. The ZnSe nanowire is provided with a sphalerite structure, the average diameter is 20 nm-80 nm, the length is 0.5 [mu]m-10 [mu]m, the size is uniform, the crystallinity is good, and the ZnSe nanowire has no structural defects such as a stacking fault. According to the ZnSe nanowire and the preparation method and the application thereof, ZnSe powder servers as pre-reaction materials, gold serves as a catalyst, and the ZnSe nanowire growing is obtained through growth on FTO conductive glass or a SnO2 single crystal substrate by a chemical vapor deposition method. The nanowire can be used for constructing solar batteries, photodetectors, nanometer lasers and the like, performance is especially good in the aspect of hydrogen production through solar photoelectrocatalysis decomposition of water, and good application prospects are achieved.