Graphite carbon nitride nanotube array photoelectrode, preparation method of array photoelectrode and application

A graphite-type carbon nitride and nanotube array technology, which is applied in the direction of electrodes, nanotechnology, nanotechnology, etc., can solve the problems of photoelectrodes without nanostructures, low photoelectric performance, and small specific surface area

Active Publication Date: 2017-07-25
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reason is that the photoelectrodes obtained by these two methods have no special nanostructure, and the specific surface area is rela

Method used

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  • Graphite carbon nitride nanotube array photoelectrode, preparation method of array photoelectrode and application
  • Graphite carbon nitride nanotube array photoelectrode, preparation method of array photoelectrode and application
  • Graphite carbon nitride nanotube array photoelectrode, preparation method of array photoelectrode and application

Examples

Experimental program
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Effect test

Embodiment 1

[0104] (1) Cut the FTO into 2cm*2.5cm size, sonicate in isopropanol, acetone and ethanol for 15min each, and then blow dry with nitrogen.

[0105] (2) Glue one end of the clean FTO with high-temperature tape, and then sputter 30nm thick TiO on the FTO 2 , after sputtering, tear off the high-temperature tape, place it in a muffle furnace, anneal at 500°C for 2h, and heat up at a rate of 16°C / min.

[0106] (3) Unsputtered TiO 2 The FTO part is glued with high temperature tape and then sputtered with TiO 2 The part continues to sputter 1600nm aluminum, after taking it out, tear off the tape, marked as Al / TiO 2 / FTO.

[0107] (4) Encapsulate Al / TiO with silica gel 2 / FTO electrode, then let it stand for 2-5 days to allow the silicone to fully cure.

[0108] (5) Place the electrode prepared in step (4) in 0.3M H 2 C 2 o 4 solution, carry out anodic oxidation, the oxidation voltage is 40V, when the anodic oxidation is until the electrode is transparent, end the oxidation, an...

Embodiment 2

[0113] (1) Cut the FTO into 2cm*2.5cm size, sonicate in isopropanol, acetone and ethanol for 15min each, and then blow dry with nitrogen.

[0114] (2) Glue one end of the clean FTO with high-temperature tape, and then sputter 30nm thick TiO on the FTO 2 As an adhesive layer, after sputtering, tear off the high-temperature tape, place it in a muffle furnace, anneal at 500°C for 2h, and heat up at a rate of 16°C / min.

[0115] (3) Unsputtered TiO 2 The FTO part is glued with high temperature tape and then sputtered with TiO 2 The part continues to sputter 800nm ​​aluminum, after taking it out, tear off the tape, marked as Al / TiO 2 / FTO.

[0116] (4) Encapsulate Al / TiO with silica gel 2 / FTO electrode, then let it stand for 2-5 days to allow the silicone to fully cure.

[0117] (5) Place the electrode prepared in step (4) in 5wt%H 3 PO 4 In the solution, the oxidation voltage is 86V. When the anodic oxidation is until the electrode is transparent, the oxidation is ended, an...

Embodiment 3

[0123] (1) Cut the FTO into 2cm*2.5cm size, sonicate in isopropanol, acetone and ethanol for 15min each, and then blow dry with nitrogen.

[0124] (2) Glue one end of the clean FTO with high-temperature tape, and then sputter 30nm thick TiO on the FTO 2 , after sputtering, tear off the high-temperature tape, place it in a muffle furnace, anneal at 500°C for 2h, and heat up at a rate of 16°C / min.

[0125] (3) Unsputtered TiO 2 The FTO part is glued with high temperature tape and then sputtered with TiO 2 The part continues to sputter 1600nm aluminum, after taking it out, tear off the tape, marked as Al / TiO 2 / FTO.

[0126] (4) Encapsulate Al / TiO with silica gel 2 / FTO electrode, then let it stand for 2-5 days to allow the silicone to fully cure.

[0127](5) Place the electrode prepared in step (4) in 5wt%H 3 PO 4 In the solution, the oxidation voltage is 86V. When the anodic oxidation is until the electrode is transparent, the oxidation is ended, and then it is immersed ...

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Abstract

The invention discloses a graphite carbon nitride nanotube array photoelectrode, a preparation method of the array photoelectrode and application in solar energy photoelectrochemistry decomposition water generation oxygen serving as a photo-anode. The diameters and lengths of graphite carbon nitride nanotubes in the graphite carbon nitride nanotube array photoelectrode can be adjusted, the diameter range is 20nm-170nm, and the length range is 400nm-2500nm. The graphite carbon nitride nanotube array photoelectrode is obtained by high-temperature condensation polymerization in an inert atmosphere with anodized aluminum supported by a conductive substrate as a template and with concentrated cyanamide solutions as a precursor. The graphite carbon nitride nanotube array photoelectrode has a large specific area and more surface activity sites, serves as the photo-anode to be applied in solar energy photoelectrochemistry decomposition water generation oxygen, and has excellent performance.

Description

technical field [0001] The invention belongs to the field of organic semiconductor materials and nanotechnology, and relates to a graphite-type carbon nitride nanotube array photoelectrode, its preparation method and application, in particular to a graphite-type carbon nitride nanotube array photoelectrode, its preparation method and Use as a photoanode in solar photoelectrochemical splitting of water to generate oxygen. Background technique [0002] Graphite carbon nitride (g-CN for short) is a polymer semiconductor composed of only two non-metallic elements, C and N, and is widely used in Photodegradation of pollutants, photocatalytic decomposition of water to produce hydrogen. So far, g-CN photocatalysts with various nanostructures including mesoporous g-CN, g-CN nanorods, and g-CN nanotubes have been reported. They generally have a larger specific surface area and more surface active sites, thus showing excellent photocatalytic performance. [0003] The related resear...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/08C23C14/18C25D11/10C25D11/08C25D11/24C23C28/04C23C28/00C25B1/04C25B11/06B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C23C14/083C23C14/185C23C14/34C23C28/04C23C28/34C25B1/04C25D11/045C25D11/08C25D11/10C25D11/24C25B1/55C25B11/051C25B11/091Y02E60/36Y02P20/133
Inventor 向琴张凯宫建茹
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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