Graphite carbon nitride nanotube array photoelectrode, preparation method of array photoelectrode and application
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
- Publication Date
- 2017-07-25
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Abstract
Description
technical field
[0001] The invention belongs to the field of organic semiconductor materials and nanotechnology, and relates to a graphite-type carbon nitride nanotube array photoelectrode, its preparation method and application, in particular to a graphite-type carbon nitride nanotube array photoelectrode, its preparation method and Use as a photoanode in solar photoelectrochemical splitting of water to generate oxygen. Background technique
[0002] Graphite carbon nitride (g-CN for short) is a polymer semiconductor composed of only two non-metallic elements, C and N, and is widely used in Photodegradation of pollutants, photocatalytic decomposition of water to produce hydrogen. So far, g-CN photocatalysts with various nanostructures including mesoporous g-CN, g-CN nanorods, and g-CN nanotubes have been reported. They generally have a larger specific surface area and more surface active sites, thus showing excellent photocatalytic performance.
[0003] The related resear...