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Ga2O3 nanowire array film and preparation method thereof

A nanowire array, nanowire technology, applied in nanotechnology, nanotechnology, nanotechnology for sensing, etc., can solve the problems of high cost and short length of gallium oxide nanowire array

Active Publication Date: 2020-10-23
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, although a small amount of Ga 2 o 3 Nanowire arrays have been reported, but the prepared gallium oxide nanowire arrays are short in length and high in cost, and the Ga 2 o 3 Density and size control of nanowire arrays has not been reported so far

Method used

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  • Ga2O3 nanowire array film and preparation method thereof
  • Ga2O3 nanowire array film and preparation method thereof
  • Ga2O3 nanowire array film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0034] Such as Figure 4 As shown, this embodiment Ga 2 O 3 The preparation method of the nanowire array film is as follows:

[0035] 1. Weigh 0.2g of metal gallium 3 and place it in the corundum boat 2.

[0036] 2. Follow Figure 4 Arrangement: Transfer the corundum boat 2 in step 1 to the quartz tube 1. The diameter of the quartz tube 1 used is Φ20mm. Then the quartz tube 1 is placed in a tube furnace with three temperature zones (upper temperature zone, middle temperature zone, and lower temperature zone), and the corundum boat 2 is located in the heating center of the middle temperature zone.

[0037] 3. Place the quartz plate 4 with the gold-sprayed sapphire substrate 5 behind the corundum boat 2 in the quartz tube 1, and the distance between the substrate material and the metal gallium 3 is 4 cm. The gold-sprayed sapphire substrate 5 is located in the lower temperature zone of the three-temperature zone tube furnace, and its function is to provide nucleation sites with low n...

Embodiment 2

[0044] Such as Figure 4 As shown, this embodiment Ga 2 O 3 The preparation method of the nanowire array film is as follows:

[0045] 1. Weigh 0.5g of gallium metal 3 and place it in the corundum boat 2.

[0046] 2. Follow Figure 4 Arrangement: Transfer the corundum boat 2 in step 1 to the quartz tube 1. The diameter of the quartz tube 1 used is Φ25mm. Then the quartz tube 1 is placed in the heating center of the middle temperature zone of the three-temperature zone tube furnace.

[0047] 3. Place the quartz plate 4 on which the gold-sprayed sapphire substrate 5 is placed behind the corundum boat 2 in the quartz tube 1, and the distance between the substrate material and the metal gallium 3 is 3 cm. The position of the gold-sprayed sapphire substrate 5 is in the lower temperature zone of the three-temperature zone tube furnace, and its function is to provide nucleation sites with low nucleation energy for the growth of gallium oxide nanowires. The thickness of the sprayed gold l...

Embodiment 3

[0054] Such as Figure 4 As shown, this embodiment Ga 2 O 3 The preparation method of the nanowire array film is as follows:

[0055] 1. Weigh 0.3 g of gallium metal 3 and place it in the corundum boat 2.

[0056] 2. Follow Figure 4 Arrangement: Transfer the corundum boat 2 in step 1 to the quartz tube 1. The diameter of the quartz tube 1 used is Φ15mm. Then the quartz tube 1 is placed in the heating center of the middle temperature zone of the three-temperature zone tube furnace.

[0057] 3. Place the quartz plate 4 with the gold-sprayed sapphire substrate 5 behind the corundum boat 2 in the quartz tube 1, and the distance between the substrate material and the metal gallium 3 is 5 cm. The position of the gold-sprayed sapphire substrate 5 is in the lower temperature zone of the three-temperature zone tube furnace, and its function is to provide nucleation sites with low nucleation energy for the growth of gallium oxide nanowires. The thickness of the sprayed gold layer is 4nm. ...

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Abstract

The invention relates to the technical field of nanometer photoelectric detection, nanometer high-temperature gas-sensitive detectors, semiconductor nanometer materials and nanometer technologies, andconcretely relates to a Ga2O3 nanowire array film and a preparation method thereof. The prepared Ga2O3 nanowire array film can be used for a nano photoelectric detector, a nano high-temperature gas-sensitive detector or other nano optoelectronic devices. The film is an epitaxially grown one-dimensional Ga2O3 nanowire array with a fixed inclination angle. The diameter of a single gallium oxide nanowire in the Ga2O3 nanowire array is 50-100 nm, the length of the nanowire is 5-50 [mu]m, and a gallium oxide nanosheet is generated on the surface of the nanowire through autocatalysis. The Ga2O3 nanowire array film is prepared by adopting a one-step method, the size and the array density of the prepared Ga2O3 nanowire array film are controllable, and the Ga2O3 nanowire array film has the advantages of being simple in technological process, convenient to implement, good in repeatability, capable of being prepared on a large scale and the like.

Description

Technical field [0001] The invention relates to the fields of nano photoelectric detection, nano high temperature gas-sensitive detector, semiconductor nano material and nano technology, and is specifically a kind of Ga 2 O 3 Nanowire array film and its preparation method, the prepared Ga 2 O 3 The nanowire array film can be used for nano photodetectors, nano high temperature gas sensors or other nano optoelectronic devices. Background technique [0002] Compared with bulk materials, nanomaterials, especially one-dimensional nanomaterials (nanowires), have the characteristics of small size, large specific surface area, and strong light-trapping ability, which make them have unique physical and chemical properties. It has huge application prospects in the miniaturization of electronic and optoelectronic devices and environmental catalytic purification, and has received extensive attention and research. [0003] One-dimensional Ga 2 O 3 Nanowires inherit the ultra-wide band gap and e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42G01N27/12B82Y15/00B82Y30/00B82Y40/00
CPCB82Y15/00B82Y30/00B82Y40/00G01J1/429G01N27/12
Inventor 刘宝丹张偲李晶张兴来
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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