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159 results about "Nanotechnology Techniques" patented technology

Systematic procedures which are utilized for the manipulation of materials at the nanoscale (i.e., less than 100 nanometers).

Method for preparing nano silver conductive ink

The invention belongs to the field of nano technology and particularly relates to a method for preparing nano silver conductive ink. The method comprises the following steps: dissolving a silver salt and an organic protective agent in a solvent, adjusting the pH value of the solution to 9 to 10 with an alkaline complexing agent, and raising the temperature gradually to 30 to 100 DEG C till the reaction system is a transparent solution; and cooling the reaction system obtained by the previous step to room temperature, adding a reducer into the reaction system, and continuously stirring the reaction system for 20 to 30 minutes to obtain the nano silver conductive ink. The molar ratio of the organic protective agent to the silver salt is 0.01-3:1; each 0.01 mol of silver salt is dissolved in 5 to 50 milliliters of solvent; and the molar ratio of the reducer to the silver salt is 1-3:1. The nano silver prepared by the method has the advantages that: the particle size is less than 10 nanometers; the process is simple, the reaction conditions are mild and the reaction time is short; the raw materials are simple and the dose of the dispersant is small; the purity and concentration are high; and the conductive property is good. In addition, the preparation cost of the nano silver ink is low; no harmful waste is produced, so the requirements for 'green production' are met; and the nano silver ink can be widely used in fields of touch screens, electronic tags, thin film switches, flexible circuit boards, medical products, sensors, printing contact, radio frequency interference screening, electrolysis, multilayer circuit board hole filling and the like.
Owner:FUDAN UNIV

A synthesis method for a dopamine-modified magnetic mesoporous silica material and applications thereof

The invention belongs to the field of nanotechnology, and in particular to a synthesis method for a dopamine-modified magnetic mesoporous silica material and applications thereof. The synthesis method comprises: first, dispersing a magnetic mesoporous silica material in a dopamine solution uniformly; adding a sodium monohydrogen phosphate - disodium hydrogen phosphate buffer solution with a concentration of 0.2M, adding glutaraldehyde, and shaking the obtained solution for reaction at a room temperature for 0.5-1 hours; washing completely; dispersing the obtained product in above step in a sodium monohydrogen phosphate - disodium hydrogen phosphate buffer solution with a concentration of 0.2M, and shaking the obtained solution for reaction at the room temperature for 2-4 hours; washing completely; dispersing the obtained product in above step in a 2mg/mL trypsin-containing ammonium bicarbonate buffer solution with a concentration of 25mM, and shaking for reaction at the room temperature for 2 hours; and washing completely to remove surface impurities the product to give the desired material. According to the material, magnetic microspheres are employed as skeletons to provide magnetism to benefit subsequent separation and analysis, the pore size distribution and biocompatibility are good, the synthesis method is simple and low in cost, and size-exclusion selective enzymolysis can be performed by fixing enzyme inside the pore.
Owner:FUDAN UNIV

Method for preparing nanometer structures from top to bottom on surfaces of (110) type silicon chips

InactiveCN102398893AOvercome the disadvantage of being expensiveSimple processNanostructure manufactureNanowireNanotechnology Techniques
The invention relates to a method for preparing nanometer structures from top to bottom on the surfaces of (110) type silicon chips, which belongs to the technical field of nanometer and is characterized in that the anisotropy wet process corrosion characteristics of silicon materials are used for preparing monocrystalline silicon nanometer wall structures or nanometer corner structures with the characteristic dimension being nanometer level on the surfaces of the (110) silicon chips, or a self limitation oxidation process is combined for further preparing the monocrystalline silicon nanometer line structure with the cross section in a reverse triangular shape. The method has the advantages that the process is simple, only the conventional photoetching and the anisotropy wet process corrosion masking manufacture, corrosion and etching processes are adopted, the large-scale manufacture can be realized, and the method belongs to a convenient micro nanometer integrating process technology. The nanometer structure manufactured in the invention can be used for studying the structure properties of the low-dimension monocrystalline silicon materials, including the study of the mechanical property, the thermal property, the electric property and the like, can also be used as sensor function structure components and has the application prospects.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Method for preparing nano structure on surface of (111) silicon wafer

The invention relates to a method for preparing a nano structure on a surface of a (111) silicon wafer, belonging to the technical field of nano. The invention is characterized in that a monocrystalline silicon nano wall structure or nano horn structure of which the characteristic dimension is on a nano level is prepared on the surface of a (111) silicon wafer by utilizing the anisotropic wet-process corrosive characteristic of the silicon material, or a self-restricting oxidation technique is combined to further prepare a monocrystalline silicon nanowire structure of which the cross section is in an inverted triangle shape. The invention has the advantage of simple technique, only relates to conventional photoetching, anisotropic wet-process etching mask manufacturing, corroding and etching techniques, can implement large-scale manufacture, and is a convenient micro/nano integration technology. The nano structure manufactured by the method provided by the invention can be used for researching properties (including mechanical, thermal, electric and other properties) of a low-dimension monocrystalline silicon material structure, can be used as a functional structure component of a sensor, and has application prospects.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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