The invention discloses a direct photoetching
quantum dot patterning method and a QLED device prepared by the same, and belongs to the field of
quantum dot (QD)
nanotechnology, a hole transport material poly ((9, 9-dioctylfluorenyl-2, 7-diyl)-alt-(9-(2-ethynyl)-
carbazole-3, 6-diyl)) (PF8Cz) and a
photoinitiator benzophenone (BP) or bis-
benzophenone (BPBP) are added into a
toluene QD solution, so that the QD
mixed solution has a photosensitive characteristic, selective
exposure is realized, and the
quantum dot is prepared by the method. According to the method, the
solubility of the QD in an original solution is changed, and development is carried out, so that direct photoetching patterning of the QD is realized, a high-resolution and high-precision QD pattern is obtained, and a patterned QLED device with good performance is prepared. The main
reaction mechanism is that after BP or BPBP is subjected to
ultraviolet exposure, C = O in molecules is converted into active free radicals, and the active free radicals and
alkyl branched chains in PF8Cz are subjected to cross-linking reaction to form a cross-linked network, so that QD in an
exposure area is fixed, and a QD pattern is formed. The patterning mode does not need participation of
quantum dot ligands, the risk that the
quantum dot ligands fall off is reduced, and damage to the light emitting performance of the QD in the photoetching process can be reduced.