Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Customizable high-gain ZnO nanowire array UV detector and preparation method thereof

A nanowire array and ultraviolet detector technology, which is applied in the field of nanotechnology and ultraviolet detection, can solve the problems of high cost, long cycle, and affecting the overall area of ​​the device, and achieve the effect of solving the problem of controllability of the growth direction and high uniformity

Active Publication Date: 2017-02-15
BEIJING UNIV OF TECH
View PDF4 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As far as the current research situation of the lateral structure is concerned, due to the fixed device structure and manufacturing method, the gain of the same device is relatively stable. If you want to obtain different gains, you need to make changes to the electrodes, such as increasing the area of ​​the electrodes, which is no different. Due to the new process flow, the cycle is long and the cost is high, which affects the overall area of ​​the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Customizable high-gain ZnO nanowire array UV detector and preparation method thereof
  • Customizable high-gain ZnO nanowire array UV detector and preparation method thereof
  • Customizable high-gain ZnO nanowire array UV detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The invention is a custom-made high-gain ZnO nanowire array ultraviolet detection device, specifically a method for detecting ultraviolet light by detecting the change of the conductivity of the ZnO nanowire.

[0034]The specific structure of a customized high-gain ZnO nanowire array ultraviolet detection device disclosed in the present invention is as follows:

[0035] There are two completely symmetrical electrodes on the surface of the Si substrate, each part of the electrode is composed of a 200 micron*100 micron rectangle and a 150 micron*200 micron rectangular connection, and the distance between the two electrodes is 5 microns. The components of all patterns are: 100nm ZnO seed layer and 115nm Ti / Au electrodes.

[0036] For the ultraviolet detection device, the Si substrate is selected as the substrate of the present invention. In order to ensure that there is no mutual influence between the devices, the SiO substrate of 300nm is selected to be grown. 2 Insulati...

Embodiment 2

[0044] The same electrode pattern structure as in Example 1, there are two completely symmetrical electrodes on the surface of the Si substrate, each part of the electrode is composed of a 200 micron*100 micron rectangle connected with a 150 micron*200 micron rectangle, and the distance between the two electrodes is 5 Microns. The components of all patterns are: 50nm ZnO seed layer and 115nm Ti / Au electrodes.

[0045] For the ultraviolet detection device, the Si substrate is selected as the substrate of the present invention. In order to ensure that there is no mutual influence between the devices, the SiO substrate of 300nm is selected to be grown. 2 Insulation. After making electrodes on the side and surface of the steps, ZnO nanowires are grown laterally. Its specific preparation method is as follows:

[0046] (1) First, after pre-baking the above-mentioned Si-based substrate, spin-coat AZ-5214 photoresist with a thickness of 1.5 microns. Engraved on the surface of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

A customizable high-gain ZnO nanowire array UV detector and a preparation method thereof relate to the fields of microelectronic technologies, nanometer technologies and UV detection. On the basis of a synergic theory, nanowires compete for a reaction solute when fluctuation is instable, an in such a competition mechanism, the thinner a seed layer is, the fewer solute resources are needed, and growth time is decided by the growth speed. Based on such a growing principle, the thickness of the seed layer, the solution concentration and growth time are adjusted to obtain nanowires of higher quality, and UV detection devices of different gains are obtained. The method is simple and effective, and the customized devices of different gains can be suitable for UV detection in different environments.

Description

technical field [0001] The invention relates to the field of nanotechnology and ultraviolet detection technology. Specifically, it uses the excellent characteristics of ZnO to respond to ultraviolet light, integrates traditional microelectronic technology and nanowires to realize the detection of ultraviolet light, and utilizes changes in device structure. A wider detection range can be realized, and the preparation requirements of detection devices with specific gain can be met. Background technique [0002] With the increasingly serious environmental pollution, global international environmental protection actions are becoming more and more frequent. Among them, the ozone layer is the protective umbrella for the earth and human beings, which can filter out 99% of ultraviolet light in sunlight. Due to the extensive use of ozone-depleting substances by humans, it has been severely damaged. Excessive ultraviolet rays will reduce the immunity of humans and animals, leading to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/09H01L31/0296H01L31/0352
CPCH01L31/0296H01L31/035227H01L31/09H01L31/1836Y02P70/50
Inventor 薛晓玮李江江高志远邹德恕张洁赵立欢
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com